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| (R) DMV1500M7 DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL IF(AV) VRRM trr (max) VF (max) 3A 700 V 55 ns 1.55 V DAMPER 6A 1500 V 135 ns 1.65 V 1 2 3 1 2 3 FEATURES AND BENEFITS s s s s s s Insulated TO-220AB (Bending option F5 available) s s s 700V Modulation diode Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2500 VRMS Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 700V technology as modulation. DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220AB package includes both the DAMPER diode and the MODULATION diode. Assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer. ABSOLUTE RATINGS (limiting values, per diode) Value Symbol VRRM IFSM Tstg Tj Parameter MODUL DAMPER Repetitive peak reverse voltage Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal 700 50 1500 75 V A C Unit - 40 to + 150 150 July 2002 - Ed: 1A 1/9 DMV1500M7 THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-c) Damper junction to case Modulation junction to case Parameter Value 4.8 5.5 Unit C/W STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES Value Symbol Parameter Test conditions Tj = 25C Typ. VF * IR ** Pulse test : Tj = 125C Typ. 1.2 100 Max. 1.65 1000 Unit Max. 2.2 100 Forward voltage drop Reverse leakage current * tp = 380 s, < 2% **tp = 5 ms, < 2% IF = 6 A VR = 1500V 1.4 V A To evaluate the maximum conduction losses of the DAMPER diode use the following equations : 2 P = 1.37 x IF(AV) + 0.047 x IF (RMS) STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE Value Symbol VF * IR ** Pulse test : Parameter Forward voltage drop Reverse leakage current * tp = 380 s, < 2% ** tp = 5 ms, < 2% Test conditions IF = 3A VR = 700V Tj = 25C Typ. Max. 2.0 20 Tj = 125C Typ. 1.25 4 Max. 1.55 50 Unit V A To evaluate the maximum conduction losses of the MODULATION diode use the following equations : 2 P = 0.98 x IF(AV) + 0.19 x IF (RMS) RECOVERY CHARACTERISTICS OF THE DAMPER DIODE Symbol trr Parameter Reverse recovery time Test conditions IF = 100mA IR = 100mA IRR = 10mA IF = 1A dIF/dt = -50A/s VR = 30V Tj = 25C Value Typ. 750 Max. Unit ns trr Reverse recovery time Tj = 25C 110 135 ns 2/9 (R) DMV1500M7 RECOVERY CHARACTERISTICS OF THE MODULATION DIODE Symbol trr Parameter Reverse recovery time Test conditions IF = 100mA IR = 100mA IRR = 10mA IF = 1A dIF/dt = -50A/s VR = 30V Tj = 25C Value Typ. 120 Max. 360 Unit ns trr Reverse recovery time Tj = 25C 55 ns TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE Symbol tfr Parameter Forward recovery time Test conditions IF = 6A dIF/dt = 80A/s VFR = 3V IF = 6A dIF/dt = 80A/s Tj = 100C Value Typ. 570 Max. Unit ns VFP Peak forward voltage Tj = 100C 21 28 V TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE Symbol tfr Parameter Forward recovery time Test conditions IF = 3A dIF/dt = 80A/s VFR = 2V IF = 3A dIF/dt = 80A/s Tj = 100C Value Typ. Max. 240 Unit ns VFP Peak forward voltage Tj = 100C 9 V (R) 3/9 DMV1500M7 Fig. 1-1: Power dissipation versus peak forward current (triangular waveform, = 0.45) (damper diode). PF(AV)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.5 1.0 1.5 2.0 2.5 Fig. 1-2: Power dissipation versus peak forward current (triangular waveform, = 0.45) (modulation diode). PF(AV)(W) IP(A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 IP(A) 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Fig. 2-1: Average forward current versus ambient temperature (damper diode). IF(AV)(A) 7 Rth(j-a) = Rth(j-c) Fig. 2-2: Average forward current versus ambient temperature (modulation diode). IF(AV)(A) 3.5 Rth(j-a) = Rth(j-c) 6 5 4 3 2 T 3.0 2.5 2.0 1.5 1.0 T 1 0 0 0.5 =tp/T 25 tp Tamb(C) 0.0 50 75 100 125 150 =tp/T 0 25 tp Tamb(C) 50 75 100 125 150 Fig. 3-1: Forward voltage drop versus forward current (damper diode). IFM(A) 100.0 Tj = 125 C (Maximum values) Fig. 3-2: Forward voltage drop versus forward current (modulation diode). IFM(A) 100.0 T j= 125 C (Maximum values) 10.0 Tj = 125 C (Typical values) 10.0 Tj = 25 C (Maximum values) Tj = 125 C (Typical values) Tj = 25 C (Maximum values) 1.0 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 0.1 0.0 0.5 1.0 1.5 2.0 VFM(V) 2.5 3.0 3.5 4.0 4.5 5.0 4/9 (R) DMV1500M7 Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse = 0.2 = 0.1 = 0.5 Fig. 5-1: Non repetitive peak forward current versus overload duration (damper diode). IM(A) 50 45 40 35 30 25 20 15 TC = 50 C TC = 25 C T 10 5 tp IM t TC = 100 C 0.1 0.0 1.E-03 1.E-02 tP(s) 1.E-01 =tp/T 0 1.E+00 1.E-03 =0.5 t(s) 1.E-02 1.E-01 1.E+00 Fig. 5-2: Non repetitive peak forward current versus overload duration (modulation diode). IM(A) 30 Fig. 6-1: Reverse recovery charges versus dIF/dt (damper diode). QRR(nC) 1000 900 IF = 6A Tj = 125 C 90% confidence 25 800 700 600 20 15 TC = 25 C 500 400 10 TC = 50 C 300 200 100 0 5 IM t TC = 100 C 0 1.E-03 =0.5 t(s) 1.E-02 1.E-01 1.E+00 dIF/dt(A/s) 0.1 1.0 10.0 Fig. 6-2: Reverse recovery charges versus dIF/dt (modulation diode). QRR(nC) 180 160 140 120 100 IF = 3A Tj = 125 C 90% confidence Fig. 7-1: Peak reverse recovery current versus dIF/dt (damper diode). IRM(A) 2.0 1.8 1.6 1.4 1.2 1.0 IF = 6A Tj = 125 C 90% confidence 80 60 40 20 0 0.1 1.0 10.0 100.0 0.8 0.6 0.4 dIF/dt(A/s) 0.2 0.0 0.1 dIF/dt(A/s) 1.0 10.0 (R) 5/9 DMV1500M7 Fig. 7-2: Peak reverse recovery current versus dIF/dt (modulation diode). IRM(A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IF = 3A Tj = 125 C 90% confidence Fig. 8-1: Transient peak forward voltage versus dIF/dt (damper diode). VFP(V) 40 35 30 25 20 15 10 5 IF = 6A Tj = 125 C 90% confidence dIF/dt(A/s) 0.0 1.0 10.0 100.0 0 0 20 40 dIF/dt(A/s) 60 80 100 120 140 Fig. 8-2: Transient peak forward voltage versus dIF/dt (modulation diode). VFP(V) 12 IF = 3A Tj = 125 C 90% confidence Fig. 9-1: Forward recovery time versus dIF/dt (damper diode). tfr(ns) 800 750 700 IF = 6A Tj= 125 C VFR = 3 V 90% confidence 10 8 650 6 600 550 500 4 2 dIF/dt(A/s) 0 0 20 40 60 80 100 120 140 450 400 0 20 40 dIF/dt(A/s) 60 80 100 120 140 Fig. 9-2: Forward recovery time versus dIF/dt (modulation diode). tfr(ns) 200 180 160 140 IF = 3A Tj= 125 C VFR= 2 V 90% confidence Fig. 10: Relative variations of dynamic parameters versus junction temperature. IRM, VFP, QRR[Tj] / IRM, VFP, QRR [Tj=125C] 1.2 1.0 0.8 120 100 80 60 40 0.2 0.4 0.6 VFP IRM QRR 20 0 0 20 40 60 dIF/dt(A/s) 0.0 Tj(C) 140 160 180 200 25 50 75 100 125 80 100 120 6/9 (R) DMV1500M7 Fig. 11: Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 Modulation diode F= 1 MHz Vosc = 30 mV Tj = 25 C Damper diode 10 VR(V) 1 1 10 100 1000 ORDERING INFORMATION DMV1500M 7 / F5 LEAD BENDING (OPTION) VRRM = 700V (Modulation diode) DAMPER AND MODULATION DIODES FOR VIDEO (R) 7/9 DMV1500M7 PACKAGE MECHANICAL DATA TO-220AB F5 OPTION DIMENSIONS REF. A B b2 Millimeters Min. 15.20 24.16 1.65 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 15.80 2.92 Max. 15.90 26.90 2.41 10.40 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 2.95 1.70 1.70 16.80 3.30 Inches Min. 0.598 0.951 0.064 0.393 0.024 0.048 0.173 0.019 0.094 0.094 0.244 0.147 0.104 0.044 0.044 0.622 0.114 Max. 0.625 1.059 0.094 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.661 0.129 a1 C a3 B b1 b2 C c1 c2 c2 R2 a3 R1 L F OI A l4 a1 e F I L l3 l2 c2 b1 e M1 c1 I2 l3 l4 M1 R1 R2 16.40 typ. 1.40 typ. 1.40 typ. 0.645 typ. 0.055 typ. 0.055 typ. PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT s s s Cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. 1mm 3.1mm 2.2mm 2.54mm 8/9 (R) DMV1500M7 PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. B C Millimeters Min. Typ. Max. Min. 15.90 0.598 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 15.20 Inches Typ. Max. 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102 b2 A L F I A a1 a2 B b1 b2 C c1 l4 a1 c2 c2 e F I I4 L c1 l3 l2 a2 15.80 16.40 16.80 0.622 0.646 0.661 b1 e M l2 l3 M s s s Cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. Type DMV1500M7 DMV1500M7F5 s Marking DMV1500M7 Package TO-220AB Weight 2.2 g Base qty 50 Delivery mode Tube Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com (R) 9/9 |
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