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| SST441 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS(off) (V) -1 to -6 V(BR)GSS Min (V) -25 gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 4.5 -1 20 FEATURES D D D D D D Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 1 pA Low Noise High CMRR: 90 dB BENEFITS D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D High-Speed Performance D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal APPLICATIONS D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters DESCRIPTION The SST441 is a monolithic high-speed dual JFET mounted in a single SO-8 package. This JFET is an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The SO-8 package is available with tape-and-reel options to support automated assembly (see Packaging Information). For similar products in TO-71 packaging, see the U441 data sheet. Narrow Body SOIC S1 D1 G1 NC 1 2 3 4 Top View 8 7 6 5 NC G2 D2 S2 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Totala . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Notes a. Derate 2.4 mW/_C above 25_C Applications information may also be obtained via FaxBack, request document #70595. www.Vishay Siliconix.com S FaxBack 408-970-5600 Document Number: 70250 S-00156-Rev. D, 14-Feb-00 8-18 SST441 Vishay Siliconix SPECIFICATIONSa Limits Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current V(BR)GSS VGS(off) IDSS IGSS IG = -1 mA, VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 5 mA TA = 125_C IG = 1 mA , VDS = 0 V -25 -1 6 -35 V -3.5 15 -1 -0.2 -1 -0.2 0.7 -500 -6 30 -500 mA pA nA pA nA V Symbol Test C di i T Conditions Min Typb Max Unit Gate Operating Current Gate-Source Forward Voltage IG VGS(F) Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos gfs gos Ciss Crss en VDS = 10 V, ID = 5 mA , f = 1 kHz kH 4.5 6 20 5.5 30 3.5 pF 1 4 nV Hz 9 200 mS mS mS mS VDS = 10 V, ID = 5 mA , f = 100 MH MHz VDS = 10 V, ID = 5 mA , f = 1 MHz MH VDS = 10 V, ID = 5 mA f = 10 kHz Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratiod |VGS1 - VGS2| D|VGS1 - VGS2| DT IDSS1 I DSS2 g fs1 g fs2 CMRR VDG = 10 V, ID = 5 mA VDG = 10 V, ID = 5 mA TA = -55 to 125_C VDS = 10 V, VGS = 0 V VDS = 10 V, ID = 5 mA f = 1 kHz VDG = 10 to 15 V, ID = 5 mA 7 10 20 mV mV/_C 0.98 Transconductance Ratiod Common Mode Rejection Ratio 0.98 90 dB NNZ Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. Assumes smaller value in the numerator. Document Number: 70250 S-00156-Rev. D, 14-Feb-00 www.Vishay Siliconix.com S FaxBack 408-970-5600 8-19 SST441 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 25 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDG = 10 V, VGS = 0 V f = 1 kHz 15 g fs - Forward Transconductance (mS) -100 nA IG @ ID = 5 mA -10 nA 1 mA I G - Gate Leakage -1 nA TA = 125_C -100 pA 1 mA -10 pA TA = 25_C IGSS @ 25_C 0 0 -3 -1 -2 -4 VGS(off) - Gate-Source Cutoff Voltage (V) -5 5 -0.1 pA 0 5 10 15 20 VDG - Drain-Gate Voltage (V) 25 100 mA 5 mA IGSS @ 125_C 100 mA Gate Leakage Current I DSS Saturation Drain Current (mA) - 20 13 15 gfs 11 10 9 5 IDSS 7 -1 pA Output Characteristics 20 VGS(off) = -3 V 16 I D - Drain Current (mA) I D - Drain Current (mA) VGS = 0 V 12 -0.4 V 8 -0.8 V -1.2 V 4 -1.6 V -2.0 V 0 4 8 12 16 VDS - Drain-Source Voltage (V) 20 20 25 Output Characteristics VGS(off) = -4 V VGS = 0 V -0.4 V 15 -0.8 V -1.2 V 10 -1.6 V -2.0 V 5 -2.4 V -2.8 V 0 4 8 12 16 VDS - Drain-Source Voltage (V) 20 0 0 Output Characteristics 5 VGS(off) = -3 V 4 I D - Drain Current (mA) -0.2 V 3 VGS = 0 V -0.4 V -0.6 V -0.8 V -1.0 V -1.2 V 2 -1.4 V -1.6 V 1 I D - Drain Current (mA) 8 10 Output Characteristics VGS(off) = -4 V VGS = 0 V -0.4 V -0.8 V 6 -1.2 V -1.6 V 4 -2.0 V -2.4 V 2 -2.8 V 0 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) 1 0 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) 1 www.Vishay Siliconix.com S FaxBack 408-970-5600 8-20 Document Number: 70250 S-00156-Rev. D, 14-Feb-00 SST441 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transfer Characteristics 20 VGS(off) = -3 V 16 I D - Drain Current (mA) TA = -55_C 12 25_C (mV) VDS = 10 V 100 VDG = 10 V TA = 25_C Gate-Source Differential Voltage vs. Drain Current VGS1- VGS2 10 8 4 125_C 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 1 0.1 1 ID - Drain Current (mA) 10 VGS - Gate-Source Voltage (V) Voltage Differential with Temperature vs. Drain Current 100 VDG = 10 V DTA = 25 to 125_C DTA = -55 to 25_C 150 Common Mode Rejection Ratio vs. Drain Current CMRR = 20 log 130 D DVDG VGS1 - VGS2 ( m V/ _C ) CMRR (dB) 110 DVDG = 10 - 20 V 90 5 - 10 V 70 VGS1 - VGS2 D 10 Dt 1 0.1 1 ID - Drain Current (mA) 10 50 0.1 1 ID - Drain Current (mA) 10 Circuit Voltage Gain vs. Drain Current 100 g fs R L AV + 1 ) R g L os 80 A V - Voltage Gain Assume VDD = 15 V, VDS = 5 V RL + 60 10 V ID r DS(on) - Drain-Source On-Resistance ( W ) 200 On-Resistance vs. Drain Current 160 VGS(off) = -3 V 120 -4 V 80 40 VGS(off) = -3 V 20 -4 V 40 0 0.1 1 ID - Drain Current (mA) Document Number: 70250 S-00156-Rev. D, 14-Feb-00 10 0 0.1 1.0 ID - Drain Current (mA) www.Vishay Siliconix.com S FaxBack 408-970-5600 10 8-21 SST441 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage 10 C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 8 5 f = 1 MHz 4 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage C iss - Input Capacitance (pF) 6 VDS = 0 V 5V 3 VDS = 0 V 2 5V 4 2 15 V 1 15 V 0 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) Output Conductance vs. Drain Current 50 VGS(off) = -3 V g os- Output Conductance (m S) 40 VDS = 10 V f = 1 kHz ( nV / Hz ) 16 20 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V 30 TA = -55_C 20 25_C 12 ID @ 10 mA 8 10 125_C 0 0.1 1 ID - Drain Current (mA) 10 en - Noise Voltage 4 VGS = 0 V 0 10 100 1k f - Frequency (Hz) 10 k 100 k Common-Source Forward Transconductance vs. Drain Current 10 VGS(off) = -3 V g fs - Forward Transconductance (mS) 8 VDS = 10 V f = 1 kHz r DS(on) - Drain-Source On-Resistance ( W ) 250 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 100 200 rDS g os- Output Conductance ( m S) gos 6 25_C 4 TA = -55_C 150 50 100 125_C 2 50 rDS @ ID = 1 mA, VGS = 0 V gos @ VDG = 10 V, VGS = 0 V, f = kHz 0 0 0 -1 -2 -3 -4 -5 0 0.1 1 ID - Drain Current (mA) 10 VGS(off) - Gate-Source Cutoff Voltage (V) Document Number: 70250 S-00156-Rev. D, 14-Feb-00 www.Vishay Siliconix.com S FaxBack 408-970-5600 8-22 |
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