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| (R) STPS1L40A/U LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS n n n n n 1A 40 V 150 C 0.42 V VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT MINIATURE PACKAGE AVALANCHE CAPABILITY SPECIFIED SMA (JEDEC DO-214AC) STPS1L40A SMB (JEDEC DO-214AA) STPS1L40U DESCRIPTION Single chip Schottky rectifiers suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMA and SMB, this device is especially intended for surface mounting and used in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 130C = 0.5 tp = 10 ms Sinusoidal tp = 2 s square F=1kHz tp = 100 s square tp = 1s Tj = 25C Value 40 8 1 60 1 1 900 - 65 to + 150 150 10000 Unit V A A A A A W C C V/s dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/6 July 2003 - Ed: 4A STPS1L40A/U THERMAL RESISTANCES Symbol Rth (j-l) Junction to lead Parameter SMA SMB STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Tests Conditions Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Value 30 25 Unit C/W Min. Typ. 6 Max. 35 10 0.5 0.42 0.63 0.61 Unit A mA V VR = 40 V IF = 1 A 0.37 IF = 2 A 0.5 To evaluate the maximum conduction losses use the following equation : P = 0.23 x IF(AV) + 0.19 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 0.0 0.2 0.4 0.6 IF(av) (A) 0.8 =tp/T T Fig. 2: Average forward current versus ambient temperature (=0.5). IF(av)(A) Rth(j-a)=Rth(j-l) = 0.1 = 0.05 = 0.2 = 0.5 1.2 1.0 =1 0.8 0.6 0.4 T Rth(j-a)=120C/W Rth(j-a)=100C/W tp 0.2 =tp/T tp Tamb(C) 50 75 100 125 150 1.0 1.2 0.0 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 2/6 STPS1L40A/U Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB). IM(A) 7 6 5 Ta=25C Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA). IM(A) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 IM 1.0 0.5 0.0 1E-3 Ta=25C 4 3 2 IM Ta=50C Ta=100C t Ta=50C Ta=100C 1 0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 t =0.5 t(s) 1E-2 1E-1 1E+0 Fig. 6-1: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMB). Zth(j-a)/Rth(j-a) 1.0 0.8 0.6 0.4 = 0.2 = 0.5 Fig. 6-2: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMA). Zth(j-a)/Rth(j-a) 1.0 0.8 0.6 0.4 = 0.5 T = 0.2 T 0.2 = 0.1 Single pulse 0.2 tp(s) 1E+0 1E+1 =tp/T tp = 0.1 Single pulse tp(s) 1E+0 1E+1 =tp/T tp 0.0 1E-2 1E-1 1E+2 5E+2 0.0 1E-2 1E-1 1E+2 5E+2 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) Tj=150C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) 200 F=1MHz Tj=25C 2E+1 1E+1 1E+0 1E-1 1E-2 1E-3 Tj=100C 100 50 Tj=25C 20 VR(V) 0 5 10 15 20 25 30 35 40 10 1 2 5 VR(V) 10 20 50 3/6 STPS1L40A/U Fig. 9-1: Forward voltage drop versus forward current (typical values, high level). IFM(A) 10.00 Tj=125C Fig. 9-2: Forward voltage drop versus forward current (typical values, low level). IFM(A) 3.0 2.5 Tj=125C 1.00 2.0 Tj=150C Tj=25C 1.5 1.0 0.5 Tj=150C Tj=25C 0.10 VFM(mV) 0.01 0 100 200 300 400 500 600 700 800 900 1000 VFM(mV) 0.0 0 100 200 300 400 500 600 700 800 Fig. 10-1: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness e(Cu)= 35m) (SMB). Rth(j-a) (C/W) 120 100 80 60 40 20 S(Cu) (cm) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 10-2: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness e(Cu)= 35m) (SMA). Rth(j-a) (C/W) 140 120 100 80 60 40 20 0 0 1 S(Cu) (cm) 2 3 4 5 4/6 STPS1L40A/U PACKAGE MECHANICAL DATA SMA DIMENSIONS REF. E1 Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063 A1 D 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 A2 b E c E A1 E1 C L A2 D b L FOOT PRINT DIMENSIONS (in millimeters) 1.65 1.45 2.40 1.45 5/6 STPS1L40A/U PACKAGE MECHANICAL DATA SMB DIMENSIONS E1 REF. Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 D A1 A2 b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 E c A1 E E1 b C L A2 D L FOOT PRINT DIMENSIONS (in millimeters) 2.3 1.52 Ordering type STPS1L40U STPS1L40A n n 2.75 1.52 Package SMB SMA Weight 0.107g 0.068g Base qty 2500 5000 Delivery mode Tape & reel Tape & reel Marking GC4 GB4 Band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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