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| BFW43 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BFW43 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. It is designed for use in amplifiers where high voltage and high gain are necessary. In particular, its feature a VCEO of 150V are specified over a wide range of curent. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb 25 C at T case 25 o C St orage Temperature Max. Operating Junction Temperature o Value -150 -150 -6 -0.1 0.4 1.4 -55 to 200 200 Unit V V V A W W o o C C 1/5 November 1997 BFW43 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 125 438 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -100 V V CE = -100 V I C = -10 A T a mb = 125 o C -150 Min. Typ . -0.2 -0.03 Max. -10 -10 Un it nA A V V ( BR)CBO Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) V CE(sat ) V BE(s at) hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain I C = -2 mA -150 V I E = -10 A -6 V I C = -10 mA I C = -10 mA I C = -1 mA I C = -10 mA I C = -10 A T amb = -55 oC V CE = -10 V I C = -1 mA I C = -10 mA IE = 0 IE = 0 IB = -1 mA IB = -1 mA VCE = -10 V V CE = -10 V V CE = -10 V f = 20 MHz 40 40 -0.1 -0.74 85 100 30 50 60 f = 1MHz 20 5 -0.5 -0.9 V V fT Transition F requency MHz MHz 25 7 pF pF C EBO C CBO Emitter Base Capacitance Collector Base Capacitance V EB = -0.5 V V CB = -5 V f = 1MHz Pulsed: Pulse duration = 300 s, duty cycle 1 % DC Current Gain. Collector-emitter Saturation Voltage. 2/5 BFW43 Base-emitter Saturation Voltage. Transition Frequency. 3/5 BFW43 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 4/5 BFW43 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5 |
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