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BSM 400 GA 120 DN2
IGBT Power Module
* Single switch * Including fast free-wheeling diodes * Package with insulated metal base plate
Type BSM 400 GA 120 DN2 BSM 400 GA 120 DN2 S Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
IC
Package SINGLE SWITCH SSW SENSE 1
Ordering Code C67070-A2302-A70 C67070-A2308-A70
1200V 550A 1200V 550A
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current
20 A 550 400
TC = 25 C TC = 80 C
Pulsed collector current, tp = 1 ms
ICpuls
1100 800
TC = 25 C TC = 125 C
Power dissipation per IGBT
Ptot
2700
W + 150 -55 ... + 150 0.045 0.09 2500 20 11 F 55 / 150 / 56 Vac mm K/W C
TC = 25 C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD Vis
-
Semiconductor Group
1
Mar-28-1996
BSM 400 GA 120 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 6 24 6.5 3 3.7
V
VGE = VCE, IC = 16 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 400 A, Tj = 25 C VGE = 15 V, IC = 400 A, Tj = 125 C
Zero gate voltage collector current
ICES
8 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C
Gate-emitter leakage current
IGES
400
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
216 26 4 2 -
S nF -
VCE = 20 V, IC = 400 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Mar-28-1996
BSM 400 GA 120 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit
td(on)
100 200
ns
VCC = 600 V, VGE = 15 V, IC = 400 A RGon = 2.7
Rise time
tr
110 220
VCC = 600 V, VGE = 15 V, IC = 400 A RGon = 2.7
Turn-off delay time
td(off)
550 800
VCC = 600 V, VGE = -15 V, IC = 400 A RGoff = 2.7
Fall time
tf
80 120
VCC = 600 V, VGE = -15 V, IC = 400 A RGoff = 2.7
Free-Wheel Diode Diode forward voltage
VF
2.3 1.8 2.8 -
V
IF = 400 A, VGE = 0 V, Tj = 25 C IF = 400 A, VGE = 0 V, Tj = 125 C
Reverse recovery time
trr
0.6 -
s
IF = 400 A, VR = -600 V, VGE = 0 V diF/dt = -3000 A/s, Tj = 125 C
Reverse recovery charge
Qrr
C
IF = 400 A, VR = -600 V, VGE = 0 V diF/dt = -3000 A/s Tj = 25 C Tj = 125 C
16 45 -
Semiconductor Group
3
Mar-28-1996
BSM 400 GA 120 DN2
Power dissipation Ptot = (TC) parameter: Tj 150 C
2800 W 2400
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 4
A
Ptot
2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0
IC
10 3
tp = 26.0s
100 s
10 2
1 ms
10 1
10 ms
DC 10 20 40 60 80 100 120 C 160
0
10
0
10
1
10
2
10
3
V
TC
VCE
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
600 A 500
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0 K/W 10 -1
IGBT
IC
450 400
ZthJC
10 -2 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 C 160 10 -5 -5 10 10
-4
D = 0.50 10
-3
0.20 0.10 0.05
10 -4
0.02 single pulse 0.01
10
-3
10
-2
10
-1
s 10
0
TC
tp
Semiconductor Group
4
Mar-28-1996
BSM 400 GA 120 DN2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
800
IC = f (VCE)
parameter: tp = 80 s, Tj = 125 C
800
A
IC
600
17V 15V 13V 11V 9V 7V
A
IC
600
17V 15V 13V 11V 9V 7V
500
500
400
400
300
300
200
200
100 0 0
100 0 0
1
2
3
V
5
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
800
A
IC
600
500
400
300
200
100 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Mar-28-1996
BSM 400 GA 120 DN2
Typ. gate charge VGE = (QGate) parameter: IC puls = 400 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 2
nF
VGE
16 14 12 10 8
Ciss
C
600 V
800 V
10 1
Coss Crss 10 0
6 4 2 0 0 10 -1 0
400
800
1200
1600
2000
nC
2800
5
10
15
20
25
30
QGate
V 40 VCE
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V
2.5
ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH
12
ICpuls/IC
ICsc/IC
8 1.5 6 1.0 4
0.5 2
0.0 0 200 400 600 800 1000 1200 V 1600 VCE
0 0 200 400 600 800 1000 1200 V 1600 VCE
Semiconductor Group
6
Mar-28-1996
BSM 400 GA 120 DN2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 2.7
10 4
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, IC = 400 A
10 4
ns t 10 3 tdoff t
ns tdoff
10 3 tdon tr tr tdon
tf 10 2
10 2
tf
10 1 0
100 200 300 400 500 600 700
A
900
10 1 0
5
10
15
20
IC
30
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 2.7
250
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, IC = 400 A
250 Eon
E
mWs
E
mWs
150 Eon Eoff
150
Eoff 100 100
50
50
0 0
100 200 300 400 500 600 700
A
900
0 0
5
10
15
20
IC
30
RG
Semiconductor Group
7
Mar-28-1996
BSM 400 GA 120 DN2
Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj
800
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0 K/W
Diode
A
IF
600
ZthJC
10 -1
500
10 -2
Tj=125C
400
Tj=25C
D = 0.50 10 -3 0.20 0.10 0.05
300
200 10 100 0 0.0
-4
0.02 single pulse 0.01
0.5
1.0
1.5
2.0
V
3.0
10 -5 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
VF
tp
Semiconductor Group
8
Mar-28-1996
BSM 400 GA 120 DN2
Circuit Diagram
Package Outlines Dimensions in mm Weight: 420 g
Semiconductor Group
9
Mar-28-1996

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