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(R)
P01xxxN
SENSITIVE GATE SCR
FEATURES IT(RMS) = 0.8A VDRM = 100V to 400V Low IGT < 200 A
K A G
A
DESCRIPTION The P01xxxN series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high volume applications using surface mount technology. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) * IT(AV) * ITSM Parameter RMS on-state current (180 conduction angle) Mean on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/s. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Ta= 70C Ta= 70C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 0.8 0.5 8 7 0.24 30 - 40, + 150 - 40, + 125 260 A2s A/s C C Unit A A A SOT223 (Plastic)
I2t dI/dt Tstg Tj Tl
* : With 5cm2 copper (e=35m) surface under tab.
Symbol VDRM VRRM
January 1995
Parameter A Repetitive peak off-state voltage Tj = 125C RGK = 1K 100
Voltage B 200 C 300 D 400
Unit V
1/5
P01xxxN
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-t) Junction to ambient * Junction to tab for DC Parameter Value 60 30 Unit C/W C/W
* : With 5cm2 copper (e=35m) surface under tab.
GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 02 VD=12V (DC) RL=140 Tj= 25C MIN MAX VGT VGD VRGM tgd IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=140 VD=VDRM RL=3.3k RGK = 1 K IRG =10A VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.1A/s IG = 10mA IT= 50mA RGK = 1 K IG=1mA RGK = 1 K ITM= 1.6A tp= 380s VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K ITM= 3 x IT(AV) VR =35V dI/dt=10A/s tp=100s dV/dt=10V/s VD= 67%VDRM RGK = 1 K Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Tj= 125C Tj= 125C MAX MIN MIN TYP MAX MAX MAX MAX MAX MIN MAX 25 200 Sensitivity 09 1 0.8 0.1 8 0.5 5 6 1.95 1 100 25 200 50 11 4 25 V V V s mA mA V A A V/s s A Unit IGM = 1 A (tp = 20 s)
ORDERING INFORMATION
P
SCR PLANAR CURRENT
2/5
01
02
SENSITIVITY
A
N
PACKAGE : N = SOT223 VOLTAGE
(R)
P01xxxN
Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Ttab).
P (W)
P (W)
Ttab (oC)
1
360
O
1 0.8
DC = 180 = 120
o o
-95 -100
Rth(j-a)
0.8 0.6 0.4 0.2
= 30
o
-105 0.6 -110 0.4 0.2 -115 -120
Tamb ( C)
o
= 90 = 60
o
o
I T(AV)(A)
0 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0
20
40
60
80
100
120
-125 140
Fig.3 : Average on-state current versus tab temperature.
I T(AV) (A)
Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a) 1.00
1
DC
0.8 0.6
0.10
0.4 0.2
= 180
o
Stand ar d fo ot print , e(Cu)=35 m
Tamb (oC)
tp (s)
0
0
10 20
30
40 50
60 70
80
90 100 110 120 130
0.01 1E-3
1E-2
1E-1
1 E+0
1E +1
1 E+2 5 E+2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
8 7 6 5
Tj initial = 25 C
o
10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 Ih Igt
4 3 2 1
Tj(oC)
Number of cycles 20 40 60 80 100 120 140
0
0 1
10
100
1,000
3/5
(R)
P01xxxN
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A 2 s)
Fig.8 : On-state characteristics (maximum values).
100
10
Tj initial = 25o C
I TM (A)
Tj initial o 25 C
I TSM
10 1 1
I2 t
Tj max
Tj max Vto =0.95 V Rt =0.600
0.1 1
tp(ms)
VTM (V)
10
0.1 0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values).
Ih(Rgk) Ih(Rgk=1k
)
Tj=25 o C
5.0
1.0
0.1
Rgk( )
1 .0 E+0 0 1. 0E+01 1.0 E+ 02 1. 0E+ 03 1 .0 E+0 4 1. 0E+05 1. 0E+ 06
4/5
(R)
P01xxxN
PACKAGE MECHANICAL DATA SOT223 (Plastic) DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max.
B A 15 (4 x) H 0/7 I D F E C
REF.
A B C D E F G H I J
G
6.30 6.70 3.30
6.50 7.00 3.50 4.60 2.30
6.70 7.30 3.70
0.248 0.256 0.264 0.264 0.275 0.287 0.130 0.139 0.146 0.181 0.090
J
K
L
M
2.90 0.60 1.50 0.43 0.50 0.63
3.00 0.70 1.60 0.45 0.60 0.65 0.05
3.10 0.80 1.70 0.47 0.70 0.67
0.114 0.118 0.122 0.023 0.027 0.031 0.059 0.063 0.067 0.017 0.018 0.019 0.019 0.023 0.027 0.024 0.025 0.026 0.002
K L M
0.32
0.012
Weight : 0.11g FOOT PRINT
3.3
MARKING Type P0102AN P0102BN P0102CN
1.2
(3x)
Marking P2A P2B P2C P2D P1A P1B P1C P1D P9A P9B P9C P9D
1.5
2.3
6.4
P0102DN P0111AN P0111BN P0111CN P0111DN P0109AN P0109BN P0109CN P0109DN
1.5
4.6
Recomm ended sol deri ng pattern SOT223
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5
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