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 (R)
1N6263
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.
DO-35
ABSOLUTE RATINGS (limiting values)
Symbol VRRM IF IFSM Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current* Surge non Repetitive Forward Current* Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Ta = 25C tp 1s Value 60 15 50 - 65 to 200 - 65 to 200 230 Unit V mA mA C C
THERMAL RESISTANCE
Symbol Rth(j-a) Junction-ambient* Test Conditions Value 400 Unit C/W
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol VBR VF * * Tamb = 25C Tamb = 25C Tamb = 25C IR * * Tamb = 25C Test Conditions IR = 10A IF = 1mA IF = 15mA VR = 50V Min. 60 0.41 1 0.2 A Typ. Max. Unit V V
DYNAMIC CHARACTERISTICS
Symbol C Tamb = 25C Tamb = 25C Test Conditions VR = 0V IF = 5mA f = 1MHz Krakauer Method Min. Typ. Max. 2.2 100 Unit pF ps
* On infinite heatsink with 4mm lead length ** Pulse test: tp 300s < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
October 2001 - Ed: 1B
1/3
1N6263
Fig. 1: Forward current versus forward voltage (typical values). Fig. 2: Capacitance C versus reverse applied voltage VR (typical values).
Fig. 3: Reverse current versus ambient temperature.
Fig. 4: Reverse current versus continuous reverse voltage (typical values).
2/3
1N6263
PACKAGE MECHANICAL DATA DO-35 REF.
C A
C
DIMENSIONS Millimeters Min. Max.
4.50 2.00
OB /
Inches Min.
0.120 0.060 1.102
Max.
0.177 0.079
A
OD / OD /
3.05 1.53 28.00 0.458
B C D
0.558
0.018
0.022
Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 3/3


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