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| (R) TPDV640 ---> TPDV1240 ALTERNISTORS FEATURES High commutation: > 142A/ms (400Hz) Insulating voltage = 2500V(RMS) (UL Recognized: EB81734) High voltage capability: VDRM = 1200V s s s A2 G A1 DESCRIPTION The TPDV640 ---> TPDV1240 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) A1 A2 G TOP3 ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C) I2t value Critical rate of rise of on-state current Gate supply: IG = 500mA dIG/dt = 1A/s Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case Tc = 75C tp = 2.5ms tp = 8.3ms tp = 10ms I2t dI/dt tp = 10ms Repetitive F = 50Hz Non repetitive Tstg Tj Tl Value 40 590 370 350 610 20 100 -40 to +150 -40 to +125 260 C C A2s A/s Unit A A TPDV Symbol VDRM VRRM Parameter 640 Repetitive peak off-state voltage Tj = 125C 600 840 800 1040 1000 1240 1200 V Unit September 2001 - Ed: 1A 1/5 TPDV640 ---> TPDV1240 THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-c) DC Rth (j-c) AC Contact to ambient Junction to case for DC Junction to case for 360 conduction angle (F = 50Hz) Parameter Value 50 1.2 0.9 Unit C/W C/W C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 40W (tp = 20s) IGM = 8A (tp = 20s) VGM = 16V (tp = 20s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL VD = 12V (DC) VD = 12V (DC) VD = VDRM Test conditions RL = 33 RL = 33 RL = 3.3k Tj = 25C Tj = 25C Tj =125C Tj = 25C Tj = 25C Quadrant I - II - III I - II - III I - II - III I - II - III I - III II IH* VTM* IDRM IRRM dV/dt * (dI/dt)c* IT = 500mA Gate open ITM = 60A VDRM rated VRRM rated Linear slope up to VD = 67% VDRM gate open (dV/dt)c = 200V/s (dV/dt)c = 10V/s tp = 380s Tj = 25C Tj = 25C Tj = 25C Tj = 125C Tj = 125C Tj = 125C TYP. MAX. MAX. MAX. MIN. MIN. MAX. MAX. MIN. TYP. TYP. Value 200 1.5 0.2 2.5 100 200 50 1.8 0.02 8 500 35 142 V/s A/ms mA V mA Unit mA V V s mA VD = VDRM IG = 500mA dIG/dt = 3A/s IG = 1.2IGT * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 TPDV640 ---> TPDV1240 Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 2: Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig. 3: RMS on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus pulse duration. Zth/Rth 1.00 Zth(j-c) 0.10 Zth(j-a) 0.01 tp(s) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. 3/5 TPDV640 ---> TPDV1240 Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t 10ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). Fig. 9: Safe operating area. 4/5 TPDV640 ---> TPDV1240 PACKAGE MECHANICAL DATA TOP3 (Plastic) DIMENSIONS REF. Millimeters Min. A B C D E F G H J K L P R 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20 Max. 4.6 1.55 15.60 0.7 2.9 16.5 21.1 15.5 5.65 3.65 4.17 1.40 Inches Min. 0.173 0.057 0.565 0.020 0.106 0.622 0.815 0.594 0.213 0.134 0.161 0.047 Max. 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.222 0.144 0.164 0.055 4.60 Typ. 0.181 Typ. OTHER INFORMATION Ordering type TPDVx40 s s s s Marking TPDVx40 Package TOP3 Weight 4.5 g Base qty 120 Delivery mode Bulk Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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