 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MDS50 DIODE / THYRISTOR MODULE .V .I .HI .I FEATURES DRM = VRRM UP TO 1200 V T(AV) = 35 A GH SURGE CAPABILITY NSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) G A I DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for power supplies up to 400 Hz on resistive or inductive load. The small volume (7cm3) and weight (29g) of the ISOTOP package are well adapted to new generation of medium size module market applications. PIN CONNECTIONS K Screw version ISOTOP TM (Plastic) 1 : Thyristor Gate (G) 2 : Thyristor Cathode (K) 3 : Thyristor Anode/Diode Cathode 4 : Diode Anode(A) (I) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM IFSM I2t dI/dt Tstg Tj Symbol RMS on-state current Average on-state current Single phase circuit, 180 conduction angle per device Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value for fusing Critical rate of rise of on-state current Gate supply : IG = 800mA - diG/dt = 1A/s Storage temperature range Operating junction temperature range Tc = 85C tp = 8.3ms tp = 10ms tp = 10ms Parameter Value 70 35 630 600 1800 100 - 40 + 150 - 40 + 125 A2s A/s C Unit A A A Parameter -800 MDS50 -1000 1000 -1200 1200 Unit VDRM VRRM April 1995 Repetitive peak off-state voltage Tj = 125 C 800 V TM : ISOTOP is a trademark of SGS-THOMSON Microelectronics 1/7 MDS50 THERMAL RESISTANCES Symbol Rth (j-c) DC Junction to case for DC Rth (c-h) Contact (case to heatsink) (4) Parameter Value 0.75 0.05 Unit C/W C/W (4) With contact grease utilisation GATE CHARACTERISTICS (maximum values) PGM = 50 W (tp = 20 s) PG (AV)= 1 W IFGM = 4 A (tp = 20 s) VRGM = 5V. ELECTRICAL CHARACTERISTICS (SCR) Symbol IGT VGT VGD tgt IL VD=12V VD=12V (DC) (DC) Test Conditions RL=33 RL =33 Tj=25C Tj=25C Tj=125C Tj=25C Tj=25C MAX MAX MIN TYP TYP MAX IH IT= 0.5A gate open Tj=25C TYP MAX VTM IDRM IRRM tq ITM= 110A tp= 380s VDRM VRRM Rated Rated Tj=25C Tj=25C Tj=125C Tj=125C MAX MAX MAX TYP Value 50 1.5 0.2 2 60 120 40 80 1.75 0.05 10 100 s V/s V mA mA Unit mA V V s mA VD=VDRM R L=3.3k VD=VDRM IG = 500mA dIG/dt = 3A/s IG=1.2 IGT IT= 110A VR =75V VD=67%VDRM dI/dt=30A/s dV/dt=20V/s Gate open Linear slope up to VD =67%VDRM gate open dV/dt * Tj=125C MIN 500 * For higher guaranteed values, please consult us. ELECTRICAL CHARACTERISTICS (DIODE) Symbol VF IR IF=110A VR =VRRM Test Conditions Tj=25C Tj=125C Tj=25C Value 1.75 10 50 Unit V mA A 2/7 MDS50 Fig. 1 : Maximun Average Power dissipation versus average on-state current. (Sinusoidal waveform : Thyristor or Diode) Fig. 2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb) for different thermal resistances heatsink + contact. (Sinusoidal waveform : Thyristor or Diode) P(av)( W) o P(av) (W) Rth( c.a)=0oC/W =90 =60 =120 Rth(c-a)=1.00oC/W =180 =30 Rth(c-a)=1.25 o C/W Rth(c-a)=O.50o C/W Rth( c-a)=0.7 5o C/W I T,IF(av)(A) Tamb( oC) Fig. 3 : Maximum average power dissipation versus average on-state current. (Rectangular waveform : Thyristor or Diode) Fig.4 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb) for different thermal resistances heatsink + contact. (Rectangular waveform : Thyristor or Diode) P(av)( W) o P(av)(W) =90o =120 o =60 o =180 o =30 o DC D.C. Rth(c.a)=0 C/W Rth(c-a)=1.00 o C/W Rth(c-a)=1.25 o C/W Rth(c-a)=O.50 o C/W Rth(c-a)=0.75 o C/W I T,IF(av)(A) Tamb( oC) Fig.5 : Maximum total power dissipation versus output current on resistive or inductive load. (Single phase bridge rectifier : 2 packages MDS50) Fig. 6 : Correlation between maximum total average power dissipation and maximum ambiant allowable temperature for different thermal resistances heatsink + contact. (Single phase bridge rectifier : 2 packages : MDS50) Ptot.(W) Ptot.(W) RESISTIVE LOAD Rth(c.a)=0 o C/W Rth(c.a)=0.25 o C/W =180 o Rth(c.a)=0.5 o C/W Rth(c-a)=O.75 o C/W INDUCTIVE LOAD Rth(c-a)=1.0 o C/W Ioutput( A) Tamb( oC) 3/7 MDS50 Fig. 7 : Maximun total power dissipation versus output current . (Three phase bridge rectifier : 3 packages : MDS50) Fig.8 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb) for different thermal resistances heatsink + contact . (Three phase bridge rectifier : 3 packages : MDS50) Ptot.(W) Rth(c.a)=0 o C/W Rth(c-a)=O.25 o C/W Rth(c-a)=0.5 o C/W Rth(c-a)=O.75 o C/W Ptot.(W) =120 o Rth(c-a)=1.0 o C/W Ioutput(A) Tamb( O C) Fig. 9 : Average on-state current versus temperature . (Sinusoidal waveform : Thyristor or Diode) case Fig. 10 : Average on-state current versus case temperature . (Rectangular waveform : Thyristor or Diode) I T,IF(av)(A) =180 o =120 =90 o =60 o o =30 o Tcase( oC) Fig. 11: Relative variation of thermal transient impedance junction to case versus pulse duration. Fig.12 : Relative variation of gate trigger and holding current versus junction temperature. K=Zth(j-c)/Rth(j-c) Igt;Ih [Tj] / Igt;Ih [Tj=25oC] Igt Ih tp(s) Tj(oC) 4/7 MDS50 Fig.13 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10 ms and 2 corresponding value of I t . (Thyristor or diode) I TSM;IFSM(A);I2t(A2s) Tj initial = 25 O C It 2 Fig. 14 : Non repetitive surge peak on-state current versus number of cycles. (Thyristor or Diode) I TSM;IFSM(A) 700 600 500 400 Tj init ial = 25 C o I TSM,IFSM 300 200 100 Number of cycles 0 1 10 100 1000 Fig. 15 : On-state characteristics . (Maximum values)(Thyristor or Diode) VTM,VFM(V) Tj=125 o C: Rt=7.0m Tj initial = 25 C Tj initial = 125 oC I TM,IFM(A) 5/7 MDS50 PACKAGE MECHANICAL DATA ISOTOP plastic : SCREW VERSION M G / OJ O A B / OI / OI D H E F C K L P screw H M4 REF. A B C D E F G H I J K L M O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 1.95 2.05 0.077 0.081 0.75 0.85 0.029 0.034 12.60 12.80 0.496 0.504 25.10 25.50 0.988 1.004 31.50 31.70 1.240 1.248 4.00 0.157 4.10 4.30 0.161 0.169 4.10 4.30 0.161 0.169 14.90 15.10 0.586 0.595 30.10 30.30 1.185 1.193 37.80 38.20 1.488 1.504 7.80 8.20 0.307 0.323 5.50 0.216 Cooling method : C Marking : Type number Weight : 28 g. (without screws) Electrical isolation : 2500V(RMS) Capacitance : < 45 pF Inductance : < 5 nH - Recommended torque value : 1.3 N.m (Max 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version). - The screws supplied with the package are adapted for mounting on a board (or others types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. 6/7 MDS50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7 |
Price & Availability of 3033
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |