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| 2SK1302 Silicon N-Channel MOS FET Application TO-220AB High speed power switching Features * Low on-resistance * High speed switching * 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol V(BR)DSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 100 20 20 80 20 50 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1302 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 100 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 10 -- -- -- -- -- -- -- -- -- -- -- 0.065 0.085 16 1300 540 160 12 100 300 150 1.3 10 250 2.0 0.085 0.12 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF/dt = 50 A/s ID = 10 A, VGS = 10 V, RL = 3 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------- --------------------- ID = 10 A, VGS = 4 V * ID = 10 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 300 -- ns -------------------------------------------------------------------------------------- 2SK1302 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 100 Maximum Safe Operation Area Ta = 25C 10 s 30 Drain Current ID (A) 1 10 0 40 10 3 1 m s ) ) ot C Sh 25 (1 = s m (T C 10 tion = ra PW Ope C D s 20 0 50 100 Case Temperature TC (C) 150 0.3 Operation in this area is limited by RDS (on) 0.1 10 1 3 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 40 Drain Current ID (A) 7V 5V 4V Drain Current ID (A) Pulse Test 20 Typical Transfer Characteristics VDS = 10 V Pulse Test 16 30 3.5 V 12 20 3V 10 VGS = 2.5 V 8 75C TC = 25C -25C 4 0 4 8 12 16 20 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK1302 Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 Drain to Source Saturation Voltage VDS (on) (V) 1.6 Pulse Test ID = 20 A 1.2 Static Drain to Source on State Resistance RDS (on) () 0.5 Static Drain to Source on State Resistance vs. Drain Current 0.2 0.1 0.05 Pulse Test VGS = 4 V 10 V 0.8 10 A 5A 0.02 0.01 0.005 2 5 10 20 50 100 Drain Current ID (A) 200 0.4 0 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 0.20 Pulse Test ID = 20 A 10 A 0.12 VGS = 4 V 5A 20 A 5 A, 10 A VGS = 10 V 0.04 50 Forward Transfer Admittance vs. Drain Current 0.16 20 10 5 -25C TC = 25C 75C 0.08 2 1 0.5 0.2 VDS = 10 V Pulse Test 0 -40 0 40 120 80 Case Temperature TC (C) 160 0.5 1.0 10 5 2 Drain Current ID (A) 20 2SK1302 Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 10000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 1000 Coss 200 100 50 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test Crss 100 20 10 0.5 10 2 1.0 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) VDS VDD = 25 V 50 V 80 V 20 Gate to Source Voltage VGS (V) 16 1000 500 200 100 Switching Characteristics 60 VGS VDD = 80 V 50 V ID = 20 A 25 V 20 40 60 80 Gate Charge Qg (nc) 12 Switching Time t (ns) 80 td (off) tf tr 40 8 50 20 20 4 VGS = 10 V PW = 2s, duty < 1 % td (on) 0 0 100 10 0.5 1.0 5 2 10 20 Drain Current ID (A) 50 2SK1302 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) 16 Pulse Test 12 10 V 5V 8 4 VGS = 0, -5 0 0.4 1.2 0.8 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 e .01 Puls 0.03 0 t ho 1S TC = 25C ch-c (t) = s (t) * ch-c ch-c = 2.50C/W, TC = 25C PDM PW 1 D =PW T T 100 1m 10 m Pulse Width PW (s) 100 m 0.01 10 10 2SK1302 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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