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| 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features * Low on-resistance R DS(on) = 0.12 typ. (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline 2SJ496 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Ta = 25C 3. Value at Ta = 25C, Rg 50 Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings -60 20 -5 -20 -5 -5 2.14 0.9 150 -55 to +150 Unit V V A A A A mJ W C C EAR* Pch* Tch Tstg 2 2SJ496 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min -60 20 -- -- -1.0 -- -- 3 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.12 0.17 5 600 290 80 10 25 95 55 -1.0 65 Max -- -- -10 10 -2.0 0.16 0.24 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I D = -5A, VGS = 0 I F = -5A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS = 0 I D = -1mA, VDS = -10V I D = -2.5A VGS = -10V*1 I D = -2.5A VGS = -4V*1 I D = 2.5A, VDS = 10V*1 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, ID = -2.5A RL = 12 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr 3 2SJ496 Main Characteristics 4 2SJ496 5 2SJ496 6 2SJ496 7 2SJ496 8 2SJ496 Package Dimensions Unit: mm 9 2SJ496 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 10 |
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