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| 2SJ409 L , 2SJ409 S SILICON P-CHANNEL MOS FET Application LDPAK 4 4 High speed power switching Features 1 1 2 3 2, 4 2 Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter * * * * 3 1 3 1. Gate 2. Drain 3. Source 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -100 20 -20 -80 -20 75 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc=25C 2SJ409 L , 2SJ409 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -100 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -80 V, VGS = 0 ID = -1 mA, VDS = -10 V --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- 20 -- -- V --------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.12 10 -250 -2.0 0.16 A A V --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- ID = -10 A VGS = -10 V * ID = -10 A VGS = -4 V * ID = -10 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -10 A VGS = -10 V RL = 3 ------------------------------------------------- -- 0.16 0.22 --------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 7.5 12 -- S --------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time -- -- -- -- -- -- -- -- 1860 680 145 15 115 320 170 -1.05 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -20 A, VGS = 0 IF = -20 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- --------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- -- 280 -- ns --------------------------------------------------------------------------------------- See characteristics curves of 2SJ221 2SJ409 L , 2SJ409 S Power vs. Temperature Derating 120 Pch (W) Channel Dissipation 80 40 0 50 100 Tc (C) 150 Case Temperature |
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