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| 2SJ248 Silicon P Channel MOS FET Application TO-220FM High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V Gate drive can be driven from 5 V source Suitable for Switching regulator, DC - DC converter 2 1 1 23 3 1. Gate 2. Drain 3. Source Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -100 20 -8 -32 -8 25 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc=25C 2SJ248 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -100 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -80 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.25 10 -250 -2.0 0.3 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -4A VGS = -10 V * ID = -4A VGS = -4 V * ID = -4A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -4A VGS = -10 V RL =2 ------------------------------------------------ -- 0.3 0.45 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 3.0 5.5 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test See characteristic cures of 2SJ247 -- -- -- -- -- -- -- -- 880 325 80 12 47 150 75 -1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -8A, VGS = 0 IF = -8 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 170 -- ns -------------------------------------------------------------------------------------- 2SJ248 Power vs. Temperature Derating 30 Channel Dissipation Pch (W) -50 -30 Maximum Safe Operation Area 10 s 10 0 Drain Current I D (A) -10 PW s 1 20 D m C = 10 s -3 -1 -0.3 -0.1 O pe s m ra tio ) ot sh (1 n 10 Operation in this area is limited by R DS (on) (T c = 25 C ) Ta = 25C -3 -10 -30 -100 -300 -1000 0 50 100 150 Case Temperature Tc (C) -0.05 -1 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 D=1 1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 1 shot Pulse 100 1m 10 m Pulse Width PW (S) 100 m 1 10 ch - c(t) = s(t) . ch - c ch - c = 5.0C / W. Tc = 25C PW D= T P DM T PW Tc = 25C |
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