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| 2SJ244 Silicon P Channel MOS FET (DIII-L) Application UPAK High speed power switching Low voltage operation 3 2 1 Features * Very low on-resistance * High speed switching * Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. D 4 G 1. Gate 2. Drain 3. Source 4. Drain S Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* Pch** Tch Tstg Ratings -12 7 2 4 1 150 -55 to +150 Unit V V A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW < 100 s, duty cycle < 10 % ** Value on the alumina ceramic board (12.5x20x0.7 mm) *** Marking is "JY". 2SJ244 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source cutoff current Zero gate voltage drain current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min -12 Typ -- Max -- Unit V Test Conditions ID = -1 mA, VGS = 0 IG = 10 A, VDS = 0 VGS = 6 V, VDS = 0 VDS = -8 V, VGS = 0 ID = -100 A VDS = -5 V VGS = -2.5 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 7 -- -- V -------------------------------------------------------------------------------------- -- -- -0.4 -- -- -- 5 -1 -1.4 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Static drain to source on state RDS(on)1 -- 0.65 0.9 ID = -0.5 A * resistance -------------------------------------------------------------------------------------- Static drain to source on state resistance Forward transfer admittance RDS(on)2 |yfs| Ciss Coss Crss t(on) t(off) VDF -- 0.5 -- ID = -1 A * VGS = -4 V ID = -1 A * VDS = -5 V VDS = -5 V VGS = 0 f = 1 MHz ID = -0.2 A*, Vin = -4 V RL = 51 IF = 4 A*, VGS = 0 -------------------------------------------------------------------------------------- -- 1.8 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off delay time Body-drain diode forward voltage * Pulse Test -- -- -- -- -- -- 130 50 260 365 1450 -- -- -- -- -- -- 7 pF pF pF ns ns V ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SJ244 Maximum Channel Power Dissipation Curve 2.0 -10 Safe Operation Area Operation in this Area is limited by R DS(on) PW = 1 ms 1 shot Channel Power Dissipation Pch ( W ) (on the alminam ceramic board) -3 Drain Current I D ( A ) 1.5 -1.0 D C O pe ra 1.0 -0.3 tio n* * -0.1 0.5 -0.03 Ta=25C -0.01 -0.1 -0.3 -1.0 -3 -10 -30 -100 0 50 100 Ambient Temperature 150 Ta ( C ) 200 Drain to Source Voltage V DS (V) **ON the almina ceramic board Typical Output Characteristics -5 -5 -4 -3.5 - 4.5 Typical Forward Transfer Characteristics -5 VDS = -5 V -4 Ta = -25 C +25 +75 -3 Pulse Test (A) -3 ID -3 -2.5 -2 -2 -1 Pulse Test V GS = -1.5 V -8 V DS (V) -10 Drain Current Drain Current ID -6 -4 -2 Drain to Source Voltage (A) -4 -2 -1 0 0 -1 -2 -3 -4 -5 Gate to Source Voltage V GS (V) 2SJ244 Forward Transfer Admittance vs. Drain Current 20 VDS = -5 V Pulse Test 10 Drain to Source On State Resistance vs. Drain Current Drain to Source On State Resistance R DS(on) ( ) 10 Pulse Test Forward Transfer Admittance |Yfs| ( S ) 5 5 Ta = -25 C 2 +25 +75 1.0 2 -2 V 1.0 -3 V 0.5 VGS = -4 V 0.5 0.2 0.2 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 0.1 -0.1 -0.2 Drain Current ID (A) -1.0 -2 -0.5 Drain Current I D (A) -5 -10 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) ( V ) 1.0 Pulse Test 0.8 Drain to Source On State Resistance vs. Case Temperature Drain to Source On State Resistance R DS(on) ( ) 1.0 Pulse Test I D = -1 A 0.8 VGS = -2.5 V -0.5 A 0.6 -0.5 A 0.4 I D = -1 A 0.6 I D = -1 A 0.4 -0.5 -0.2 VGS = -4 V 0.2 -0.1 0.2 0 -1 -2 -3 -4 -5 0 -25 0 25 50 75 100 Gate to Source Voltage V GS (V) Case Temperature Tc ( C ) 2SJ244 Reverse Recovery Time vs. Reverse Drain Current 2000 2000 Switching Time vs. Drain Current VGS = - 4 V, V DD = - 10 V PW = 2 s, Duty Cycle = 1 % t rr ( ns ) di/dt = -10 A/s PW = 10 s 1000 1000 td(off) tf tr Reverse Recovery Time t ( ns ) Switching Time 500 500 200 200 100 100 td(on) 50 50 20 -0.1 -0.2 -0.5 -1.0 -2 -5 20 -10 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Reverse Drain Current I DR (A) Drain Current I D (A) Dynamic Input Characteristics -25 -10 Typical Capacitance vs. Drain to Source Voltage 1000 VGS = 0 I D = -4 A (V) Pulse Test -20 -5 V V GS ( V ) V DD = -10 V -8 ( pF ) 500 Coss f = 1 MHz V DS C Typical Capacitance Drain to Source Voltage Gate to Source Voltage -15 V GS 200 100 50 Ciss -6 -10 -4 Crss -5 V DD = -10 V -5 V -2 20 10 -0.1 -0.2 -0.5 -1.0 -2 -5 Drain to Source Voltage V DS (V) -10 V DS 0 6 8 10 0 2 4 Gate Charge Qg ( nc ) 2SJ244 Reverse Drain Current vs. Source to Drain Voltage -4 (A) Pulse Test Reverse Drain Current I DR -3 -2 -4 V -2.5 V -1 VGS = 0 0 -0.5 -1.0 -1.5 Source to Drain Voltage VSD (V) -2.0 |
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