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| ADE-208-291 (Z) 2SH18 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO-220AB Features * High speed switching * Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 20 18 30 60 150 -55 to +150 Unit V V A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ic(peak) PC* Tj IC VGES -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Tstg -------------------------------------------------------------------------------------- * Value at Tc = 25C 1 2SH18 Table 2 Electrical Characteristics (Ta = 25C) Item Collector to emitter breakdown voltage Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff current Collector to emitter saturation voltage Collector to emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES Min 600 Typ -- Max -- Unit Test conditions V IC = 100 A, VGE = 0 VCE = 600 V, VGE = 0 VGE = 20 V, VCE = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- 0.5 mA -------------------------------------------------------------------------------------- -- 3.0 -- -- -- 1.5 1 6.0 -- A V V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- VCE(sat)1 VCE(sat)2 Cies IC = 7.5 A, VGE = 15 V IC = 15 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz IC = 15 A, RL = 20 , VGE = 15 V Rg = 50 VGE(off) IC = 1 mA, VCE = 10 V -------------------------------------------------------------------------------------- -- 2.0 2.6 V -------------------------------------------------------------------------------------- -- 1400 -- pF -------------------------------------------------------------------------------------- Switching time -------------------------------- ton tf -- -- -- 200 2000 2500 -- -- -- tr -- 120 -- ns -------------------------------- -------------------------------- toff -------------------------------------------------------------------------------------- 2 2SH18 Power vs. Temperature Derating 100 Pc (W) 100 I C (A) Maximum Safe Operation Area 80 10 Collector Dissipation Collector Current 60 DC (T Op c= e 25 ratio C n ) 10 0 PW 1 (1 s m ms 0 s =1 1 40 sh ot) 20 0.1 Ta = 25 C 0 50 100 Case Temperature 150 Tc (C) 200 0.01 1 10 100 1000 Collector to Emitter Voltage V CE (V) Reverse Bias SOA 100 I C (A) I C (A) 50 Typical Output Charactristics Pulse Test Ta = 25 C 40 V GE = 15 V 12 V 10 V 20 8V 6V 0 2 4 6 8 10 Collector to Emitter Voltage V CE (V) 10 Collector Current 1 0.1 Tc = 25 C 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Collector Current 30 10 0.01 3 2SH18 Typical Transfer Characteristics Collector to Emitter Saturation Voltage V CE(sat) (V) 50 I C (A) 10 Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 10 A 8 5A 40 I C = 15 A Collector Current 30 Tc = -25 C 25 C 75 C 6 20 4 10 Pulse Test V CE = 10 V 0 4 8 12 Gate to Emitter Voltage 16 20 V GE (V) 2 Pulse Test 0 4 8 12 Gate to Emitter Voltage 16 20 V GE (V) Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) 50 20 10 5 2 1 Tc =75 C 25 C -25 C Pulse Test VGE = 15 V 10000 Typical Cpacacitance vs. Collector to Emitter Voltage C (pF) Cies 1000 Capacitance 100 Coes Cres V GE = 0 f = 1 MHz 2 5 10 20 50 Collector Current I C (A) 100 0.5 1 10 0 10 20 30 40 50 Collector to Emitter Voltage V CE (V) 4 2SH18 Dynamic Input Characteristics Collector to Emitter Voltage VCE (V) 500 VCC = 400 V 300 V 200 V 20 Gate to Emitter Voltage VGE (V) Switching Characteristics 2000 tf 1000 t (ns) 500 td(off) 400 16 Switching Time 300 VGE 12 200 100 td(on) 50 20 0.5 V CC = 300 V V GE = 15 V tr Rg = 50 Tc = 25 C 5 1 2 10 20 50 Collector Current I C (A) 200 VCC = 400 V 300 V 200 V VCE 0 20 40 60 80 Gate Charge Qg (nc) 8 100 I C = 15 A 4 0 100 Switching Characteristics 5000 tf I C = 15 A 1000 R L =20 (VCC = 300 V) V GE = 15 V Tc = 25 C 500 td(off) 2000 200 100 50 10 tr 5000 Switching Characteristics tf t (ns) t (ns) Switching Time 2000 I C = 15 A 1000 R L = 20 V GE = 15 V 500 Rg = 50 Switching Time td(off) 200 tr 100 td(on) 50 -25 0 25 50 75 100 Case Temperature Tc (C) 125 td(on) 20 50 100 200 500 1000 Gate Resistance Rg ( ) 5 2SH18 Normalized Transient Thermal Imperande vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 2.08 C/W, Tc = 25 C 2 PCM 0.0 0 .01 0.03 1 o sh tP u lse D= PW T PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Waveforms 90% 0 10% Ic Monitor Vin V CE Vin Monitor VCE Monitor Rg Vin 15 V RL 90% V CC Ic td(on) ton 10% tr td(off) toff 10% tf 90% D.U.T. 6 2SH18 Package Dimensions * TO-220AB 3.0max 1.27 11.5 max 9.8 max 7.6 min 0.1 f 3.6 + 0.08 - Unit : mm 4.8 max 1.5 max 6.3 min 18.5 0.5 1.5 max 12.7 min 15.3 max 0.5 7.8 0.5 0.76 0.1 2.5 0.5 5.1 0.5 2.7 max Hitachi Code TO-220AB SC-46 EIAJ -- JEDEC 7 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. |
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