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| 2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application * Low frequency high voltage amplifier * Complementary pair with 2SB715, 2SB716 and 2SB716A Outline 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD755 100 100 5 50 750 150 -55 to +150 2SD756 120 120 5 50 750 150 -55 to +150 2SD756A 140 140 5 50 750 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) 2SD755 Item Collector to emitter breakdown voltage Collector to base breakdown voltage Collector cutoff current Symbol Min V(BR)CEO 100 V(BR)CBO 100 ICBO 1 2SD756 Max -- -- 0.5 Min 120 120 -- Typ Max -- -- -- -- -- -- -- 0.5 800 -- 0.75 -- 350 1.6 0.2 -- -- 2SD756A Min 140 140 -- 250 125 -- -- -- -- Typ Max -- -- -- -- -- -- -- 350 1.6 -- -- 0.5 500 -- 0.75 0.2 -- -- V V Unit Test conditions V V A IC = 1 mA, RBE = IC = 10 A, I E = 0 VCB = 100 V, I E = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 10 mA VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA Typ -- -- -- -- -- -- -- 350 1.6 -- 250 125 -- -- -- -- DC current transfer ratio hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE 1200 250 -- 0.75 0.2 -- -- 125 -- -- -- -- VCE(sat) Gain bandwidth product fT Collector output capacitance Cob MHz VCE = 12 V, IC = 5 mA pF VCB = 25 V, IE = 0, f = 1 MHz Note: 1. The 2SD755, 2SD756 and 2SD756A are grouped by hFE1 as follows. D E 400 to 800 400 to 800 -- F 600 to 1200 -- -- 250 to 500 250 to 500 250 to 500 2SD755 2SD756 2SD756A 2 2SD755, 2SD756, 2SD756A 3 2SD755, 2SD756, 2SD756A 4 2SD755, 2SD756, 2SD756A When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5 |
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