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Transistor
2SD1450
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
4.00.2 2.00.2
(0.8) 3.00.2
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (Ta=25C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25C)
Ratings 25 20 12 1 0.5 300 150 -55 ~ +150 Unit V V V A A mW C C
1:Emitter 2:Collector 3:Base
1 2 3 0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1
15.60.5
(0.8)
q
Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat).
0.75 max.
7.6
s Features
NS-B1 Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse
(Ta=25C)
Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 Conditions VCB = 25V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 500mA, IB = 20mA*2 IC = 500mA, IB = 20mA*2 200 10 0.6
*2
min
typ
max 100
Unit nA V V V
25 20 12 200 60 0.13 0.4 1.2 800
V V MHz pF
VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz
Pulse measurement
*1h
FE1
Rank classification
R 200 ~ 350 S 300 ~ 500 T 400 ~ 800
*3R on
Measurement circuit
1k
Rank hFE1
IB=1mA f=1kHz V=0.3V
VB
VV
VA
Ron=
VB 1000() VA-VB
618
Transistor
PC -- Ta
500 2.4 Ta=25C 2.0
2SD1450
IC -- VCE
100
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10
Collector power dissipation PC (mW)
30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C
Collector current IC (A)
400
1.6 IB=4.0mA 3.5mA 1.2 3.0mA 2.5mA 2.0mA 0.8 1.5mA 1.0mA 0.4 0.5mA
300
25C
200
100
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C 25C -25C IC/IB=25 1200
hFE -- IC
400 VCE=2V
fT -- I E
VCB=10V Ta=25C
Forward current transfer ratio hFE
1000
Transition frequency fT (MHz)
0.3 1 3 10
350 300 250 200 150 100 50
800 Ta=75C 600 25C -25C 400
200
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob -- VCB
20 120 IE=0 f=1MHz Ta=25C
NV -- IC
VCE=10V GV=80dB Function=FLAT
Collector output capacitance Cob (pF)
Noise voltage NV (mV)
16
100
80 Rg=100k 60 22k 40 5k
12
8
4
20
0 1 3 10 30 100
0 0.01
0.03
0.1
0.3
1
Collector to base voltage VCB (V)
Collector current IC (mA)
619
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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