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| 2SC5246 Silicon NPN Epitaxial ADE-208-264 1st. Edition Application VHF / UHF wide band amplifier Features * High gain bandwidth product fT = 12 GHz typ * High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline 2SC5246 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is "ZC-". Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 20 80 150 -55 to +150 Unit V V V mA mW C C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25C) Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO hFE Cob fT PG NF Min -- -- -- 50 -- 9 14 -- Typ -- -- -- 100 0.3 12 16.5 1.6 Max 10 1 10 160 0.8 -- -- 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 10 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 10 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC5246 3 2SC5246 4 2SC5246 5 2SC5246 6 2SC5246 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.793 0.702 0.594 0.495 0.415 0.349 0.293 0.241 0.214 0.181 ANG. -18.9 -36.0 -49.4 -59.9 -69.1 -76.8 -83.0 -90.2 -93.9 -103 S21 MAG. 9.98 8.88 7.63 6.54 5.65 4.94 4.37 3.93 3.57 3.28 ANG. 161 144 131 120 112 105 99.4 94.7 90.2 89.3 S12 MAG. 0.026 0.047 0.063 0.074 0.085 0.093 0.102 0.110 0.119 0.127 ANG. 78.6 70.2 64.6 62.4 61.1 60.5 61.3 61.7 61.9 63.4 S22 MAG. 0.955 0.864 0.768 0.684 0.620 0.572 0.535 0.508 0.486 0.469 ANG. -12.0 -22.7 -30.3 -34.8 -38.0 -40.1 -42.0 -43.7 -45.0 -46.4 S Parameter (VCE = 5 V, IC = 10 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.679 0.552 0.445 0.342 0.283 0.228 0.191 0.166 0.136 0.123 ANG. -26.4 -48.9 -64.5 -76.7 -88.1 -98.3 -105 -119 -124 -140 S21 MAG. 13.2 10.8 8.71 7.12 5.99 5.15 4.50 4.01 3.62 3.31 ANG. 155 135 121 111 104 97.8 93.0 88.6 84.6 81.1 S12 MAG. 0.024 0.041 0.054 0.064 0.073 0.083 0.092 0.102 0.112 0.122 ANG. 76.2 69.0 64.8 64.5 64.5 65.7 66.8 67.9 68.3 69.5 S22 MAG. 0.924 0.794 0.687 0.611 0.559 0.526 0.501 0.483 0.470 0.460 ANG. -14.6 -25.1 -30.6 -33.3 -34.9 -36.0 -37.3 -38.5 -40.1 -41.3 7 2SC5246 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.764 0.651 0.545 0.439 0.366 0.308 0.263 0.228 0.205 0.175 ANG. -23.4 -43.6 -59.5 -72.2 -83.3 -92.9 -102 -113 -120 -131 S21 MAG. 9.82 8.47 7.13 5.98 5.10 4.46 3.92 3.51 3.19 2.92 ANG. 159 140 126 116 108 101 95.3 90.4 86.0 82.3 S12 MAG. 0.028 0.051 0.067 0.079 0.088 0.097 0.105 0.114 0.123 0.132 ANG. 77.1 67.8 62.1 59.7 58.7 59.0 59.7 60.4 61.1 62.5 S22 MAG. 0.938 0.830 0.727 0.641 0.581 0.537 0.505 0.481 0.461 0.447 ANG. -13.7 -24.8 -31.9 -36.7 -39.2 -41.3 -43.1 -44.8 -46.5 -47.8 S Parameter (VCE = 1 V, IC = 10 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.570 0.443 0.376 0.333 0.317 0.309 0.305 0.312 0.309 0.320 ANG. -52.3 -89.8 -115 -134 -149 -161 -171 -180 175 166 S21 MAG. 10.3 7.23 5.37 4.20 3.43 2.93 2.53 2.25 2.03 1.84 ANG. 143 120 107 97.7 91.0 85.0 80.1 76.1 72.0 68.6 S12 MAG. 0.030 0.046 0.056 0.064 0.073 0.082 0.091 0.101 0.112 0.123 ANG. 66.1 56.8 56.7 58.4 60.8 63.8 65.8 68.1 69.9 71.4 S22 MAG. 0.811 0.665 0.586 0.534 0.519 0.505 0.495 0.487 0.481 0.476 ANG. -17.9 -25.2 -27.6 -29.0 -30.6 -32.5 -34.8 -37.6 -40.3 -43.1 8 2SC5246 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 9 |
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