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Transistor
2SC3929, 2SC3929A
Silicon NPN epitaxial planar type
Unit: mm
(0.425)
For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A s Features
* Low noise voltage NV * High forward current transfer ratio hFE * S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.3+0.1 -0.0 3
0.15+0.10 -0.05
1.250.10
2.10.1 5
1
2
(0.65) (0.65) 1.30.1 2.00.2
s Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage 2SC3929 2SC3929A 2SC3929 2SC3929A VEBO ICP IC PC Tj Tstg VCEO Symbol VCBO Rating 35 55 35 55 5 100 50 150 150 -55 to +150 V mA mA mW C C V Unit V
10
0.90.1
0.9+0.2 -0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package
Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Marking symbol S (2SC3929) T (2SC3929A)
s Electrical Characteristics Ta = 25C
Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio
*
Conditions VCB = 10 V, IE = 0 VCE = 10 V, IB = 0 IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCE = 5 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCE = 1 V, IC = 100 mA VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 k, Function = FLAT VCB = 5 V, IE = -2 mA, f = 200 MHz
Min
Typ
0 to 0.1
Max 100 1
Unit nA A V
2SC3929 2SC3929A 2SC3929 2SC3929A
VCBO VCEO VEBO hFE VCE(sat) VBE NV fT
35 55 35 55 5 180 700 0.6 0.7 1 150 80
V
V
Collector to emitter saturation voltage Base to emitter voltage Noise voltage Transition frequency Note) *: hFE Rank classification Rank hFE Marking symbol
Publication date: March 2002
V V mV MHz
R 180 to 360
S 260 to 520 SS TS
SJC00140BED
T 360 to 700 ST TT
2SC3929 2SC3929A
SR TR
0.20.1
1
2SC3929, 2SC3929A
PC Ta
240
160 140
IC VCE
Ta = 25C 160 140
IC IB
VCE = 5 V Ta = 25C
Collector power dissipation PC (mW)
200
Collector current IC (mA)
120 100
Collector current IC (mA)
IB = 350 A 300 A 250 A
120 100 80 60 40 20 0
160
120
80 60 40 20
200 A 150 A 100 A 50 A
80
40
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0
0.1
0.2
0.3
0.4
0.5
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
IC VBE
120 25C 100 Ta = 75C -25C
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
VCE = 5 V 100 30 10 3 1 0.3 Ta = 75C 0.1 0.03 0.01 0.1 25C -25C IC / IB = 10 720
hFE IC
VCE = 5 V
Forward current transfer ratio hFE
600
Collector current IC (mA)
Ta = 75C
80
480 25C 360 -25C
60
40
240
20
120
0
0
0.4
0.8
1.2
1.6
2.0
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
30
100
Base to emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
fT I E
500 VCB = 5 V Ta = 25C 20
Cob VCB
Collector output capacitance Cob (pF)
IE = 0 f = 1 MHz Ta = 25C 160 140
NV VCE
IC = 1 mA GV = 80 dB Function = FLAT Rg = 100 k
Transition frequency fT (MHz)
400
16
Noise voltage NV (mV)
120 100 80 60 40 20
300
12
200
8
22 k 4.7 k
100
4
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
0 0.1
0.3
1
3
10
30
100
0
1
3
10
30
100
Emitter current IE (mA)
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
2
SJC00140BED
2SC3929, 2SC3929A
NV VCE
300 Rg = 100 k 240 160 140 VCE = 10 V GV = 80 dB Function = FLAT
NV IC
300
NV IC
VCE = 10 V GV = 80 dB Function = RIAA
240
Noise voltage NV (mV)
Noise voltage NV (mV)
180
100 80 60 22 k 40 4.7 k 20 0 0.01 Rg = 100 k
Noise voltage NV (mV)
IC = 1 mA GV = 80 dB Function = RIAA
120
180
120 22 k 60 4.7 k 0
120
Rg = 100 k 22 k 4.7 k
60
1
3
10
30
100
0.03
0.1
0.3
1
0 0.01
0.03
0.1
0.3
1
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
NV Rg
160 140 VCE = 10 V GV = 80 dB Function = FLAT 300
NV Rg
VCE = 10 V GV = 80 dB Function = RIAA
240
Noise voltage NV (mV)
100 80 60 40 0.1 mA 20 0
Noise voltage NV (mV)
120
180 IC = 1 mA 120 0.5 mA 60 0.1 mA 0
IC = 1 mA 0.5 mA
1
3
10
30
100
1
3
10
30
100
Signal source resistance Rg (k)
Signal source resistance Rg (k)
SJC00140BED
3
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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