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| PRODUCT BRIEF MX29L811 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES * 3.3V10% write, erase and read * Endurance: 10,000 cycles * Fast random access time: 100/120ns * Fast pagemode access time: 30/50ns * Page access depth: 16 bytes/8 words, page address A0, A1, A2 * Sector erase architecture - 16 equal sectors of 64k bytes each - Sector erase time: 200ms typical * Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses INDEX *Status Register feature for detection of program or erase cycle completion *Low VCC write inhibit no larger then 1.8V *Software and hardware data protection *Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 5ms typical *Low power dissipation - 50mA active current - 20uA standby current *Two independently Protected sectors *Industry standard surface mount packaging - 44 lead SOP 48 TSOP(I) , GENERAL DESCRIPTION The MX29L811 is a 8-mega bit pagemode Flash memory organized as either 512K wordx16 or 1M bytex8. The MX29L811 includes 16 sectors of 64KB(65,536 Bytes or 32,768 words). MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory and fast page mode access. The MX29L811 is packaged 44-pin SOP and 48-TSOP(I). It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers. The standard MX29L811 offers access times as fast as 100ns,allowing operation of high-speed microprocessors without wait. To eliminate bus contention, the MX29L1611 has separate chip enable CE, output enable (OE), and write enable (WE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29L811 uses a command register to manage this functionality. To allow for simple in-system reprogrammability, the MX29L811 does not require high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. MXIC Flash technology reliably stores memory contents even after 10,000 cycles. The MXIC's cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29L811 uses a 3.3V10% VCC supply to perform the Auto Erase and Auto Program algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC +1V. REV.0.0 JAN 20,1999 PRODUCT BRIEF MX29L811 PIN CONFIGURATIONS 44 SOP(500mil) INDEX PIN DESCRIPTION PIN NAME Address Input Data Input/Output Q15(Word mode)/LSB addr.(Byte mode) CE Chip Enable Input OE Output Enable Input WE Write Enable Input WP* Sector Write Protect Input BYTE Word/Byte Selection Input VCC Power Supply GND Ground Pin *Only for 44 SOP SYMBOL A0 - A18 Q0 - Q14 Q15/A-1 48 TSOP(NORMAL TYPE) 48 TSOP (REVERSE TYPE) REV.0.0 JAN 20,1999 |
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