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Bulletin I25173 rev. B 03/94
ST303S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
300A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz It
2
ST303S
300 65 471 7950 8320 316 288 400 to 1200 10 to 30 - 40 to 125
Units
A C A A A KA2s KA2s V s C
@ 50Hz @ 60Hz
VDRM /VRRM tq range (*) TJ
q
case style TO-209AE (TO-118)
(*) t = 10 to 20s for 400 to 800V devices q t = 15 to 30s for 1000 to 1200V devices
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1
ST303S Series
Bulletin I25173 rev. B 03/94
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 ST303S 08 10 12
V DRM/V RRM, maximum repetitive peak voltage V
400 800 1000 1200
VRSM , maximum non-repetitive peak voltage V
500 900 1100 1300
I DRM/I RRM max.
@ TJ = TJ max.
mA
50
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 670 480 230 35 50 V DRM 50 40
ITM 180oel 470 330 140 50 50 65 1050 1021 760 150 50 V DRM 40
ITM 100s 940 710 470 50 65 5240 1800 730 90 50 VDRM 40
ITM
Units
4300 1270 430 50 65 V A/s C A
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST303S
300 65 471 7950 8320 6690 7000
Units
A C
Conditions
180 conduction, half sine wave DC @ 45C case temperature t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
316 288 224 204 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
3160
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST303S Series
Bulletin I25173 rev. B 03/94
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST303S
2.16 1.44 1.46 0.57
Units
Conditions
ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x I T(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), T J = TJ max.
m 0.56 600 1000 mA
T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST303S
1000 0.80 Min 10
q
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp = 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
t
q q
Max. turn-off time (*)
Max 30
s
(*) t = 10 to 20s for 400 to 800V devices; t = 15 to 30s for 1000 to 1200V devices.
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST303S
500 50
Units
V/s mA
Conditions
TJ = TJ max, linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST303S
60 10 10 20
Units
W A
Conditions
T J = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST303S Series
Bulletin I25173 rev. B 03/94
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
ST303S
-40 to 125 -40 to 150 0.10 0.03 48.5 (425)
Units
C
Conditions
DC operation K/W Nm (Ibf-in) g See Outline Table Non lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
535
TO-209AE (TO-118)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.011 0.013 0.017 0.025 0.041 0.008 0.014 0.018 0.026 0.042 K/W
Conditions
T J = TJ max.
Ordering Information Table
Device Code
ST
1
30
2
3
3
S
4
12
5
P
6
F
7
N
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M24 x 1.5 - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 3 = Threaded top terminal 3/8" 24UNF-2A
t (s)
dv/dt - tq combinations available
dv/dt (V/s) 20 10 CN q 12 CM up to 800V 15 CL 20 CK
q
50 DN DM DL DK -DP DK DJ DH
100 EN EM EL EK --EK EJ EH
200 FN * FM FL * FK * --FK * FJ * FH
400 HN HM HL HK --HK HJ HH
10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
t (s) only for 1000/1200V
15 18 20 25 30
CL CP CK CJ --
*Standard part number.
All other types available only on request.
4
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ST303S Series
Bulletin I25173 rev. B 03/94
Outline Table
CERAMIC HOUSING
22 (0.87) MAX. 4.3 (0.17) DIA. 4.5 (0.18) MAX.
MIN 9 .5 (0 . 37 ) .
WHITE GATE 10.5 (0.41) NOM. RED SILICON RUBBER RED CATHODE 38 (1.50) MAX. DIA. 255 (10.04) 245 (9.65) 245 (9.65) 10 (0.39) FLEXIBLE LEAD C.S. 50mm 2 (0.078 s.i.)
22 (
0.8 6)
WHITE SHRINK RED SHRINK
27.5 (1.08)
MAX.
SW 45
21 (0.82) MAX.
47 (1.85) MAX.
3/4"16 UNF-2A 49 (1.92) MAX. * FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
CERAMIC HOUSING
17 (0.67) DIA.
3/8"-24UNF-2A
25 (0.98)
MI N.
Fast-on Terminals
AMP. 280000-1 REF-250
38 (1.5) 77.5 (3.05) 80.5 (3.17) DIA. MAX.
47 (1.85)
21 (0.83)
27.5 (1.08)
All dimensions in millimeters (inches)
MAX.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
MAX.
Case Style TO-209AE (TO-118) with top thread terminal 3/8"
MAX.
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ST303S Series
Bulletin I25173 rev. B 03/94
Maximum Allowable Case Temperature (C) 130 120 110 100 90 80 70 60 0 50 100 150 200 250 300 350 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Conduction Angle
Maximum Allowable Case Temperature (C)
130 120 110 100 90 80 70 60 50 40 0 100
ST303S Series R thJC (DC) = 0.10 K/W
ST303S Series R (DC) = 0.10 K/W
thJC
Conduction Period
30 60 90 120 180
30 60 90 120 200
180
DC 400 500
300
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
600
S R th
03 0.
500
400 300
200
180 120 90 60 30 RMS Limit
Conduction Angle
0.0 6
0.
K/ W
W K/
A
= 01 0.
/W 2K /W 0. 1 6K /W 0.2 K /W 0. 3 K/W
0.1
08 K
K/ W ta el -D R
0.5 K/
W
100 0 0 50 100 150
ST303S Series TJ = 125C
200
250
300 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss (W)
900 800 700 600 500
400 300
DC 180 120 90 60 30
R
A= 0. 03 01 K/ K/ W W 0.0 -D 6K e lt /W a R 0. 1 2K /W th S
0.
RMS Limit
Conduction Period
0. 2 K
200 100 0 0
/W 0.3 K /W
ST303S Series TJ = 125C
0 .5 K /W
25 50 100 150 200 250 300 350 400 450 500 Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
6
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ST303S Series
Bulletin I25173 rev. B 03/94
Peak Half Sine Wave On-state Current (A)
7000 6500 6000 5500 5000 4500 4000 3500 3000 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
8000 7500
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 7000 Initial TJ = 125C No Voltage Reapplied 6500 Rated VRRM Reapplied 6000 5500 5000 4500 4000 ST303S Series 3500 3000 0.01 0.1 Pulse Train Duration (s)
Fig. 6 - Maximum Non-repetitive Surge Current
ST303S Series
1
Fig. 5 - Maximum Non-repetitive Surge Current
Transient Thermal Impedance Z thJC (K/W)
10000 Instantaneous On-state Current (A)
1 Steady State Value R thJC = 0.10 K/W (DC Operation) 0.1
1000 TJ = 25C TJ = 125C ST303S Series 100 1 2 3 4 5 6 7 8 Instantaneous On-state Voltage (V)
0.01 ST303S Series
0.001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
Maximum Reverse Recovery Charge - Qrr (C)
300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40
I
TM
= 500 A 300 A 200 A 100 A 50 A
Maximum Reverse Recovery Current - Irr (A)
320
180
I
TM
160 140 120 100 80 60 40 20 10
= 500 A 300 A 200 A 100 A 50 A
ST303S Series TJ = 125 C
ST303S Series TJ = 125 C
50
60
70
80
90 100
20 30
40 50
60
70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovered Charge Characteristics
Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 10 - Reverse Recovery Current Characteristics
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ST303S Series
Bulletin I25173 rev. B 03/94
1E4
Peak On-state Current (A)
1E3
1000 1500 2000
500
400 200
100
50 Hz
500 1000
Snubber circuit R s = 10 ohms Cs = 0.47 F V D = 80% V DRM ST303S Series Sinusoidal pulse TC = 40C
400 200
100
50 Hz
1500
1E2
2500
Snubber circuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM ST303S Series Sinusoidal pulse TC = 65C
tp
tp
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Peak On-state Current (A)
1E3
500 1000 1500
400 200
100
50 Hz
400 500 1000 1500 200
100
50 Hz
1E2
2500
2000
Snubber circuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM
Snubber circuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM ST303S Series Trapezoidal pulse TC = 65C di/dt = 50A/s
1E1
ST303S Series Trapezoidal pulse TC = 40C di/dt = 50A/s
2000
1E0 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Peak On-state Current (A)
1E3
500 1000
400
200
100
50 Hz
400 500 200 100
50 Hz
1E2
1500 2000 2500
Snubber circuit R s = 10 ohms C s = 0.47 F V D = 80% V DRM ST303S Series Trapezoidal pulse TC = 40C di/dt = 100A/s
1000 1500
Snubber circuit R s = 10 ohms C s = 0.47 F V D = 80% V DRM ST303S Series Trapezoidal pulse TC = 65C di/dt = 100A/s
1E1
2000 tp
tp
1E0 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
8
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ST303S Series
Bulletin I25173 rev. B 03/94
1E5
ST303S Series Rectangular pulse di/dt = 50A/s 20 joules per pulse 10 5 3 2
0.5 0.4
Peak On-state Current (A)
tp
1E4
3 5 10 2 1
20 joules per pulse
1E3
1 0.5
1E2
ST303S Series Sinusoidal pulse tp
0.4
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
Tj=-40 C Tj=25 C Tj=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: ST303S Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
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