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Bulletin I25180 rev. B 04/00
ST173C..C SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
330A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ T hs IT(RMS) @ T hs ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM tq range TJ
ST173C..C
330 55 610 25 4680 4900 110 100 1000 to1200 15 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s C
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ST173C..C Series
Bulletin I25180 rev. B 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code V DRM/V RRM, maximum repetitive peak voltage V
ST173C..C 10 12 1000 1200
VRSM , maximum non-repetitive peak voltage V
1100 1300
I DRM/I RRM max.
@ T J = TJ max.
mA
40
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 760 730 600 350 50 VDRM 50 40
ITM 180oel 660 590 490 270 50 50 55 1200 1260 1200 850 50 VDRM 40
ITM 100s 1030 1080 1030 720 50 55 5570 2800 1620 800 50 V DRM 40
ITM
Units
4920 2460 1390 680 50 55 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST173C..C
330 (120) 55 (85) 610 4680 4900 3940 4120
Units
A C
Conditions
180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
110 100 77 71 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
1100
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST173C..C Series
Bulletin I25180 rev. B 04/00
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r t1 r Low level value of forward slope resistance
t2
ST173C..C Units
2.07 1.55 1.61 0.87 m 0.77 600 1000 mA V
Conditions
ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
V T(TO)1 Low level value of threshold
High level value of forward slope resistance Maximum holding current Typical latching current
IH IL
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST173C..C
1000 1.1 Min 15 Max 30
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
s
tq
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST173C..C
500 40
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request T J = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST173C..C
60 10 10 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST173C..C Series
Bulletin I25180 rev. B 04/00
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST173C..C
-40 to 125 -40 to 150 0.17 0.08 0.033 0.017 4900 (500)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
50
TO - 200AB (A-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side 0.015 0.018 0.024 0.035 0.060 0.016 0.019 0.024 0.035 0.060 0.011 0.019 0.026 0.036 0.060 0.011 0.019 0.026 0.037 0.061
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
17
2
3
3
C
4
12
5
C
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) dv/dt - tq combinations available
dv/dt (V/s) 15 18 t (s) 20 q 25 30 20 CL CP CK CJ -50 -DP DK DJ DH 100 -EP EK EJ EH 200 -FP * FK * FJ FH 400 --HK HJ HH
*Standard part number.
All other types available only on request.
4
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ST173C..C Series
Bulletin I25180 rev. B 04/00
Outline Table
ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP
6.5 (0.26) 4.75 (0.19)
25 5
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
42 (1.65) MAX. 28 (1.10)
M a x im um A llo w ab le H e a tsin k T e m p e ra t u re (C )
M aximum Allowable Heatsin k Tem perature ( C)
130 120 110 100 90 80 70 60 50 40 0 40 80
ST173C..C Series (Sin gle Side Cooled) R th J-hs (D C) = 0.17 K/W
1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 50 1 00 30
ST 1 7 3 C ..C S e rie s (Sin g le S id e C o o le d ) R thJ-hs (D C ) = 0 .1 7 K / W
C o nduc tio n A ng le
C o ndu ct io n Pe rio d
60 90 120 180 15 0 200 25 0 DC 30 0 35 0
30
60 90 120 120 160
180
200
240
Average On -state Current (A)
Fig. 1 - Current Ratings Characteristics
A v e ra g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
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ST173C..C Series
Bulletin I25180 rev. B 04/00
M a x im u m A llo w a b le He a t sin k T e m p e rat u re ( C ) M a x im um A llo w a b le H e a t sin k Te m p e ra t ure (C ) 1 30 1 20 1 10 1 00 90
C on duc tion A ng le
1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 1 00 200 3 0 60
ST 1 7 3 C ..C S e rie s (D o ub le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 8 K/ W
ST 1 7 3 C ..C Se rie s (D o u b le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 8 K / W
C o ndu ctio n Pe rio d
80 70 60 50 40 30 0 50 1 00 15 0 2 0 0 2 50 3 00 35 0 40 0 A v e ra g e O n - sta t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
30 60 90 1 20 18 0
1 20 9 0 300 180 40 0 500 DC 6 00 70 0
A v e ra g e O n -st a t e C urr e n t (A )
Fig. 4 - Current Ratings Characteristics
M a xim u m A v e ra g e O n -s ta t e P o w e r Lo ss (W )
M a x im um A v e ra g e O n -st a t e P o w e r L o ss (W )
1 00 0 90 0 80 0 70 0 60 0 50 0 40 0 30 0 20 0 10 0 0 0 5 0 1 00 15 0 2 00 2 5 0 3 00 35 0 40 0 45 0 A v e ra g e O n -st a te C u rre n t (A )
Fig. 5 - On-state Power Loss Characteristics
Co nd uctio n A ng le
1 4 00 1 2 00 1 0 00 8 00 6 0 0 R M S Lim it
Co nd uc tio n Pe riod
180 120 90 60 30 R M S Lim it
DC 1 80 1 20 90 60 30
4 00 2 00 0 0 10 0 200 3 00 4 00 50 0 600 7 00 A v e ra g e O n -st a te C u rre n t (A )
Fig. 6 - On-state Power Loss Characteristics
S T 1 7 3 C ..C Se rie s T J = 1 25 C
ST 1 7 3 C ..C Se r ie s T J = 1 2 5 C
P e a k H a lf S in e W a v e O n -st a te C u rre n t (A )
40 0 0
A t A n y R a te d Lo a d C o n d it io n A n d W it h R a t e d V RRM A p p lie d F o llo w in g S u rg e . In it ia l T J = 1 2 5 C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s
P e a k H a lf S in e W a v e O n - sta t e C u rre n t (A )
45 0 0
5000
35 0 0
M a x im u m N o n R e p e t it iv e S urg e C u rre n t V e rsu s P ulse T ra in D u ra t io n . C o n t ro l 4500 O f C o n d u c t io n M a y N o t B e M a in t a in e d . In it ia l T J = 1 2 5 C 4000 N o V o lt a g e R e a p p lie d Ra t e d V RRM R e a p p lie d 3500 3000 2500 2000 ST 1 7 3 C ..C S e rie s
30 0 0
25 0 0 ST 1 7 3 C ..C S e rie s 20 0 0 1 10 1 00
N um b er O f E qua l A m p litude H alf C yc le C urre n t Pulse s (N )
1500 0.01
0.1 P u lse T ra in D u ra tio n (s)
1
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
6
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ST173C..C Series
Bulletin I25180 rev. B 04/00
Tr a nsie n t T h e r m a l Im pe d a n c e Z thJ-hs (K /W ) 10000 In stantaneous O n-state Curren t (A) ST173C ..C Series 1 S T 1 7 3 C ..C Se rie s
0 .1
1000
0 .0 1
S t e a d y S ta t e V a lu e R th J- hs = 0 .1 7 K / W (S in g le S id e C o o le d ) R th J- hs = 0 .0 8 K / W (D o u b le S id e C o o le d ) (D C O p e ra t io n ) 0. 01 0. 1 1 10
T J = 25C T J = 125C 100 1 1.5 2 2.5 3 3.5 4 4.5 Instantan eous On -state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0 .0 0 1 0 .0 0 1
S q u a re W a v e P u lse D ur at io n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr ( A ) 1 60 1 40 1 20 1 00 80 60 40 20 0 0 20 40 60 80 100 R a t e O f Fa ll O f F o rw a r d C u rre n t - d i/ d t ( A / s) S T1 73 C ..C S e rie s T J = 1 2 5 C
I TM = 5 00 A 30 0 A 2 00 A 1 00 A 50 A
Maximum Reverse Recovery Ch arge - Qrr (C)
250 ST173C..C Series TJ = 125 C
I T M = 5 00 A 300 A 200 A
200
150
10 0 A
100
50 A
50
0 0 20 40 60 80 100 Rate O f Fall Of O n-state Current - di/dt (A/s)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
1 E4
Snu bbe r c irc uit R s = 47 oh m s C s = 0.22 F V D = 80% V DR M 100 0 500 1 50 0 400 2 00 1 00 50 Hz 10 00 50 0 1 50 0 2 50 0 30 0 0 ST1 73 C.. C Serie s Sinuso idal pulse T C = 40 C 5 0 00 tp ST1 73C ..C Serie s Sinusoidal pulse T C = 55C 40 0 20 0 10 0 Snub ber c irc uit R s = 47 o hm s C s = 0 .22 F V D = 8 0% V D R M
P e a k O n - sta t e C u rre n t (A )
50 Hz
1 E3
3 000 5 00 0
2 50 0
tp
1 E2 1E1
1E2
1 E3
1 E4 4 E1 1 1E 1 1E
1 E2
1E3
1E4
P u lse Ba se w id t h ( s)
Fig. 13 - Frequency Characteristics
Pu lse B a se w id th ( s)
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ST173C..C Series
Bulletin I25180 rev. B 04/00
1 E4
Snu bbe r c irc uit R s = 47 o hm s C s = 0 .22 F V D = 8 0% V D RM Snub ber c ircuit R s = 47 o hm s C s = 0 .22 F V D = 8 0% V D RM
P ea k O n- st a te C u rr e nt (A )
1 E3
2 00 0 2 50 0 30 00 5 00 0
2 00 50 0 4 00 1 5 00 1 00 0
1 00
50 Hz 1 50 0 2 00 0 2 50 0 3 00 0 tp 5 00 0 10 00 5 00 400 2 00
100 50 Hz
tp
ST173 C. .C Se ries Trapezo idal pulse T C = 40 C di/dt = 5 0A/s
ST17 3C. .C Se ries Trapezo idal pulse T C = 5 5C di/dt = 5 0A/s
1 E2 1 E1
1E2
1E3
1 E14E 4 1 E11E 1
1E2
1 E3
1 E4
Pu lse B a se w id th ( s)
Fig. 14 - Frequency Characteristics
P ulse B a se w idt h ( s)
1 E4
P e a k O n - st a t e C u rre n t (A )
Sn ubbe r c irc uit R s = 4 7 o hm s C s = 0 .22 F V D = 8 0% V D RM 500 400 20 0 10 0 50 Hz 1 50 0 2 50 0 3 00 0 5 0 00 ST17 3C ..C Se ries Trape zoidal p ulse T C = 40C d i/dt = 1 00 A/s 10 00 0 tp 1 000 5 00
Snub be r c irc uit R s = 47 o hm s C s = 0 .22 F V D = 8 0% V D RM 40 0 20 0 1 00 50 Hz
1 E3
15 00 2 50 0 3 00 0 10 00
1 E2
5 000 10 00 0
tp
ST1 73 C..C Serie s Trap ezo ida l pu lse T C = 55C di/dt = 10 0A /s
1 E1 1E1
1E2
1E3
1 E14E 4 1 E11E 1
1 E2
1E 3
1E4
Pu lse B a se w id t h ( s)
Fig. 15 - Frequency Characteristics
P u lse B ase w id t h ( s)
1 E5
ST1 73 C..C Serie s Rec ta ngular pulse di/d t = 50 A/s 20 jo ules pe r pulse 3 5 10
P e a k O n - st at e C u rr e n t (A )
tp
1 E4
20 jo ule s pe r p ulse 12 10 35 2 1 0 .5 0.3 0 .2 ST17 3C ..C Serie s Sinuso idal pulse 0 .1
1 E3
0.3 0 .2 0.1
0.5
1 E2
tp
1 E1 1E 1
1 E2
1E3
1 E14E 4 1 E 1 1 1E
1E2
1 E3
1 E4
P u lse B a se w id th ( s)
P u lse Ba se w id th (s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
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ST173C..C Series
Bulletin I25180 rev. B 04/00
1 00 In st a n ta n e o us G a te V o lt ag e ( V ) Re c ta n g ula r ga t e p ulse a ) R e c o m m e n d e d lo a d lin e f o r rat e d d i/d t : 2 0 V , 1 0 o h m s; tr <= 1 s b ) R e c o m m e n d e d lo a d lin e fo r < = 3 0 % ra t e d di/ dt : 1 0 V , 1 0 o h m s 10 tr< = 1 s (b )
Tj=-40 C Tj=2 5 C Tj=1 25 C
(1) (2) (3) (4) (a )
PG M PG M PG M PG M
= = = =
10 W , 20 W , 40 W , 60 W ,
tp tp tp tp
= = = =
20m s 10m s 5m s 3 .3 m s
1 V GD IG D 0 .1 0 .0 0 1 0 .0 1
(1)
(2)
(3) (4)
D e v ic e : ST 1 7 3 C ..C S e rie s F re q u e n c y L im ite d b y PG (A V ) 0 .1 1 10 1 00
In st a n t a n e o u s G a t e C u rre n t ( A )
Fig. 17 - Gate Characteristics
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