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| PD - 93757B IRLML2502 HEXFET(R) Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching G1 3D S 2 VDSS = 20V RDS(on) = 0.045 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Micro3TM Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 4.2 3.4 33 1.25 0.8 0.01 12 -55 to + 150 Units V A W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. 75 Max. 100 Units C/W www.irf.com 1 5/17/00 IRLML2502 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 --- --- --- 0.60 5.8 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.01 0.035 0.050 --- --- --- --- --- --- 8.0 1.8 1.7 7.5 10 54 26 740 90 66 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.045 VGS = 4.5V, ID = 4.2A 0.080 VGS = 2.5V, ID = 3.6A 1.2 V VDS = VGS, I D = 250A --- S VDS = 10V, ID = 4.0A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 12 ID = 4.0A 2.7 nC VDS = 10V 2.6 VGS = 5.0V --- VDD = 10V --- ID = 1.0A ns --- RG = 6 --- RD = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 16 8.6 1.3 A 33 1.2 24 13 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.3A, VGS = 0V TJ = 25C, IF = 1.3A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Surface mounted on FR-4 board, t 5sec. Pulse width 300s; duty cycle 2%. 2 www.irf.com IRLML2502 100 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP 100 I D , Drain-to-Source Current (A) 2.25V 10 I D , Drain-to-Source Current (A) VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP 2.25V 10 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = 4.0A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1.5 TJ = 25 C 1.0 TJ = 150 C 0.5 10 2.0 V DS = 15V 20s PULSE WIDTH 2.4 2.8 3.2 3.6 4.0 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML2502 1200 1000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 4.0A VDS = 10V 8 C, Capacitance (pF) 800 C iss 6 600 4 400 200 2 Coss Crss 1 10 100 0 0 0 4 8 12 16 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10 TJ = 150 C I D , Drain Current (A) 100 10us 10 100us 1ms 1 10ms 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 0.1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLML2502 4.0 I D , Drain Current (A) 3.0 2.0 1.0 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 P DM t1 t2 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLML2502 R DS ( on ) , Drain-to-Source On Resistance ( ) 0.05 0.30 R DS(on) , Drain-to -Source Voltage ( ) VGS = 2.5V 0.20 0.04 Id = 4.0A 0.03 0.10 VGS = 4.5V 0.02 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0.00 0 10 20 30 40 iD , Drain Current ( A ) VGS, Gate -to -Source Voltage ( V ) Fig 11. On-Resistance Vs. Gate Voltage Fig 12. On-Resistance Vs. Drain Current 6 www.irf.com IRLML2502 Micro3TM Package Outline Dimensions are shown in millimeters (inches) D -B3 L E A D A S S IG N M E N T S 1 - G A TE 2 - SO U R C E 3 - D R AIN H 2 0.20 ( .00 8 ) M AM D IM A A1 B C D e e1 E IN C H E S M IN .03 2 .00 1 .01 5 .004 .105 MA X .04 4 .00 4 .02 1 .006 .120 M ILL IM ET E R S M IN 0.8 2 0.0 2 0.3 8 0 .10 2 .67 MAX 1 .11 0 .10 0 .54 0.15 3.05 3 E -A- 3 1 .07 50 BA S IC .03 75 BA S IC .04 7 .083 .00 5 0 .055 .098 .0 10 8 1.90 B A SIC 0.9 5 B AS IC 1.2 0 2 .10 0.1 3 0 1 .40 2.50 0 .25 8 e e1 0.008 (.0 03) L 3X C 3X H L A -CB 3X 0.10 (.00 4) M A1 C AS B S M IN IM U M R E C O M ME N D E D FO O T PR IN T 0 .80 ( .031 ) 3X 0 .90 ( .0 35 ) 3X 2.00 ( .079 ) N OTES: 1 . D IM EN SIO N IN G & T O L E R A N C IN G P ER A N SI Y1 4.5M -1 982. 2 . C O N TR O LLIN G D IM E N S IO N : IN C H . 3 D IM EN SIO N S D O N O T IN C LU D E M O LD F LA SH . 0.95 ( .037 ) 2X Micro3TM Part Marking Information www.irf.com 7 IRLML2502 Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 8mm 4mm NOTES: FEED DIRECTION 1. OUT LINE CONFORMS TO EIA-481 & EIA-541. O 7" 8mm NOT ES : 1. OUT LINE CONFORMS T O EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 5/00 8 www.irf.com |
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