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PD - 93881B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ57214SE 100K Rads (Si) RDS(on) 1.5 ID 1.9A
IRHQ57214SE 250V, QUAD N-CHANNEL
4#
TECHNOLOGY
c
LCC-28
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 1.9 1.2 7.6 12 0.1 20 30 1.9 1.2 9.9 -55 to 150 300 (for 5s) 0.89 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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IRHQ57214SE
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) (Per Die)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
250 -- -- 2.5 1.4 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.28 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 338 53 2.6 -- -- 1.5 4.5 -- 10 25 100 -100 8.0 2.1 3.4 25 20 35 20 -- -- -- -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 1.2A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 1.2A VDS= 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 1.9A VDS = 125V VDD = 125V, ID = 1.9A VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss Coss Crss
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
nA
nC
ns
nH
pF
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 1.9 7.6 1.2 168 771
Test Conditions
A
V ns nC Tj = 25C, IS = 1.9A, VGS = 0V Tj = 25C, IF = 1.9A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC Junction-to-Case
Min Typ Max
-- -- 10.4
Units
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics
IRHQ57214SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation (Per Die)
Parameter
BV DSS VGS(th) IGSS IGSS I DSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (LCC-28) Diode Forward Voltage
100K Rads (Si)
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 200V, VGS=0V VGS = 12V, ID = 1.2A VGS = 12V, ID = 1.2A VGS = 0V, ID = 1.9A
Min
250 2.0 -- -- -- -- -- --
Max
-- 4.5 100 -100 10 1.45 1.5 1.2
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 250 250 250 250 250 32.5 250 250 250 250 240 28.4 250 250 225 175 50
300 250 200 VDS 150 100 50 0 0 -5 -10 VGS -15 -20 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHQ57214SE
Pre-Irradiation
10
Drain-to-Source Current (A) I D , I Drain-to-Source Current (A) D'
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
5.0V
1
1
5.0V
0.1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
I D , Drain-to-Source Current (A)
TJ = 150 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 1.9A
2.0
TJ = 25 C
1
1.5
1.0
0.5
0.1 5.0
15
V DS = 50V 20s PULSE WIDTH 7.0 6.0 8.0
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHQ57214SE
600
500
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 1.9A
16
VDS = 200V VDS = 125V VDS = 50V
C, Capacitance (pF)
400
Ciss
12
300
C oss
200
8
100
4
C rss
1 10 100
0
0 0 4
FOR TEST CIRCUIT SEE FIGURE 13
12 8 16
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
I D , Drain Current (A)
TJ = 150 C
1
10
10us
TJ = 25 C
100us
1
0.1 0.2
V GS = 0 V
0.6 0.9 1.3 1.6
0.1
TC = 25 C TJ = 150 C Single Pulse
1 10 100
1ms 10ms
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHQ57214SE
Pre-Irradiation
2.0
VDS
1.6
RD
VGS RG
D.U.T.
+
ID , Drain Current (A)
-VDD
1.2
VGS
Pulse Width 1 s Duty Factor 0.1 %
0.8
Fig 10a. Switching Time Test Circuit
0.4
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJC )
10 D = 0.50 0.20 0.10 1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.1 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1
PDM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHQ57214SE
EAS , Single Pulse Avalanche Energy (mJ)
80
1 5V
60
ID 0.8A 1.2A BOTTOM 1.9A TOP
VD S
L
D R IV E R
RG
D .U .T.
IA S tp
40
+ - VD D
A
VGS 20V
0 .0 1
20
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHQ57214SE
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 16.4 mH Peak IL = 1.9A, VGS = 12V ISD 1.9A, di/dt 205A/s, VDD 250V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- LCC-28
Q2
Q1
Q3
Q4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01
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