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PD - 91252A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTOR
(R)
IRHM2C50SE IRHM7C50SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
600Volt, 0.6, (SEE) RAD HARD HEXFET
International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Product Summary
Part Number IRHM2C50SE IRHM7C50SE BVDSS 600V 600V RDS(on) 0.60 0.60 ID 10.4A 10.4A
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight 10.4 6.5 41.6 151 1.2 20 500 10.4 15.1 4.0 -55 to 150
Pre-Irradiation
IRHM2C50SE, IRHM7C50SE Units A
W W/C V mJ A mJ V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10 sec.) 9.3 (typical)
g
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1
1/6/99
IRHM2C50SE, IRHM7C50SE Devices
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
600 -- -- -- 2.5 3.0 -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 -- -- 0.60 0.65 4.5 -- 50 250 100 -100 150 30 75 28 75 75 75 -- -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 6.5A VGS = 12V, ID = 10.4A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 6.5A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 10.4A VDS = Max Rating x 0.5 VDD = 300V, ID = 10.4A, RG = 2.35
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nA nC
ns
nH
M a u e f o d i la, e s r d r m ran ed 6 m ( . 5 i ) f o p ckage m 02 n rm a t c n e o d e. o etr f i Maue fo suc la, esrd rm ore ed 6 m ( . 5 i ) f o p ckage m 02 n rm a t suc bnigpd o ore odn a.
ybl h Modified MOSFET s m o s ow ig te itrn l i d c a c s. n h ne a n u t n e
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
2510 400 110
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 10.4 41.6 1.6 750 9.8
Test Conditions
Modified MOSFET symbol show n t e i t gr ig h ne a l r e s p n j n t o r c i i r. ev r e - u c i n e t f e
A
V ns C
Tj = 25C, IS = 10.4A, VGS = 0V Tj = 25C, IF = 10.4A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max
-- -- -- -- 0.83 0.21 -- -- 48
Units
C/W
Test Conditions
Typical socket mount
2
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Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
IRHM2C50SE, IRHM7C50SE Devices
met for either of the two low dose rate test circuits that are used. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation Every manufacturing lot is tested in a low dose rate level of 1 x 105 Rads (Si) the only parameter limit (total dose) environment per MlL-STD-750, test change is V GSTh minimum . method 1019 condition A. International Rectifier has High dose rate testing may be done on a special imposed a standard gate condition of 12 volts per note 12 5 and a VDS bias condition equal to 80% of the de- request basis using a dose rate up to 1 x 10 Rads (Si)/Sec ( See Table 2). vice rated voltage per note 6. Pre and Post-irradiation limits of the devices irradiated to 0.5 x 105 Rads International Rectifier radiation hardened HEXFETs (Si) and 1 x 105 Rads (Si) are identical and pre- have been characterized in heavy ion Single Event sented in Table 1, column 1, IRHM2C50SE and col- Effects (SEE) environments. Single Event Effects umn 2, IRHM7C50SE. The values in Table 1 will be characterization is shown in Table 3. International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier comprises 3 radiation environments.
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD
IRHM2C50SE IRHM7C50SE
50 K Rads (Si) 100 K Rads (Si) Units
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=0.8 x Max Rating, VGS =0V VGS = 12V, ID =6.5A TC = 25C, IS = 10.4A,VGS = 0V
Min Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage 600 2.5 -- -- -- -- --
Max -- 4.5 100 -100 50 0.6 1.6
Min 600 2.0 -- -- -- -- --
Max -- 4.5 100 -100 50 0.6 1.6 V nA A V
Table 2. High Dose Rate
Parameter
VDSS IPP di/dt L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Drain-to-Source Voltage
Min Typ Max Min Typ Max Units Test Conditions -- -- 480 -- -- 480 V Applied drain-to-source voltage during gamma-dot -- 6.4 -- -- 6.4 -- A Peak radiation induced photo-current -- 16 -- -- 2.3 -- A/sec Rate of rise of photo-current -- 20 -- -- 137 -- H Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1x 105
Range (m)
~28
VDSBias (V)
480
VGS Bias (V)
-5
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3
IRHM2C50SE, IRHM7C50SE Devices
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
10
10
5.0V
1
1
5.0V
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
I D , Drain-to-Source Current (A)
TJ = 25 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 10.4A
2.5
10
TJ = 150 C
2.0
1.5
1
1.0
0.5
0.1 5 6 7 8
V DS = 50V 20s PULSE WIDTH 9 10 11 12
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
4
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHM2C50SE, IRHM7C50SE Devices
5000
VGS , Gate-to-Source Voltage (V)
4000
VGS = Ciss = Crss = Coss =
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 10.4A
VDS = 480V VDS = 300V VDS = 120V
16
C, Capacitance (pF)
3000
Ciss
12
2000
8
Coss
1000
Crss
4
0 1 10 100
0 0 30 60
FOR TEST CIRCUIT SEE FIGURE 13
90 120 150
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
TJ = 150 C
I D , Drain Current (A)
100 10us 10 100us 1ms 1 10ms
1
TJ = 25 C
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
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Fig 8. Maximum Safe Operating Area
5
IRHM2C50SE, IRHM7C50SE Devices
Pre-Irradiation
12
VDS VGS RG
RD
10
D.U.T.
+
I D , Drain Current (A)
8
-VDD
12V
6
Pulse Width 1 s Duty Factor 0.1 %
4
Fig 10a. Switching Time Test Circuit
VDS 90%
2
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1 D = 0.50
Thermal Response (Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM2C50SE, IRHM7C50SE Devices
EAS , Single Pulse Avalanche Energy (mJ)
1200
1 5V
1000
ID 4.7A 6.6A BOTTOM 10.4A TOP
VD S
L
D R IV E R
800
600
RG
D .U .T
IA S
+ - VD D
A
12V 20V
tp
400
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
200
0 25 50 75 100 125 150
V (B R )D S S tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
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Fig 13b. Gate Charge Test Circuit
7
IRHM2C50SE, IRHM7C50SE Devices
Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. @ Starting TJ = 25C, EAS = [0.5 * L * (IL2) ], VDD =50V Peak IL = 10.4A, VGS =12 V, 25 RG 200 ISD 10.4A, di/dt 400A/s, VDD BVDSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2%
Pre-Irradiation
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-irradiation) applied and VGS = 0 during irradiation per MlL-STD -750, method 1019, condition A. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. All Pre-Irradiation and Post-Irradiation test conditions are identical to facilitate direct comparison for circuit applications.
Case Outline and Dimensions -- TO-254AA
.1 2 ( .0 0 5 ) 3 .7 8 ( .1 4 9 ) 3 .5 3 ( .1 3 9 ) -A 1 3 .8 4 ( .5 4 5 ) 1 3 .5 9 ( .5 3 5 ) 6 .6 0 ( .26 0 ) 6 .3 2 ( .24 9 ) -B 1 .27 ( .0 5 0 ) 1 .02 ( .0 4 0 )
17 .4 0 ( .6 8 5 ) 16 .8 9 ( .6 6 5 ) 3 1 .4 0 ( 1 .2 3 5 ) 3 0 .3 9 ( 1 .1 9 9 )
2 0 .3 2 ( .8 0 0 ) 2 0 .0 7 ( .7 9 0 )
1 3 .84 ( .5 4 5 ) 1 3 .59 ( .5 3 5 )
LEG END 1 - C O L L E C TO R W 2 - E M ITTE R 3 - G A TE
123
1
2
3 -C -
3X 3 .8 1 ( .1 5 0 ) 2X N O TE S :
1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) .50 ( .0 20 ) .25 ( .0 10 ) M C AM B MC
3 .8 1 ( .1 5 0 )
1 . D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ).
LEGEND 1- DRAIN 2- SOURCE 3- GATE
LEGEND 1- DRAIN 2- SOURCE 3- GATE
Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and ( Inches )
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations perfomed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 1/99
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