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PD - 94382
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGS10B60KD IRGSL10B60KD
VCES = 600V VCE(on) typ. = 1.8V
Features
* Low VCE (on) Non Punch Through IGBT Technology. * Low Diode VF. * 10s Short Circuit Capability. * Square RBSOA. * Ultrasoft Diode Reverse Recovery Characteristics. * Positive VCE (on) Temperature Coefficient.
G E
@ VGE = 15V,
Benefits
* Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation.
n-ch an nel
ICE = 10A, Tj=25C
D2Pak IRGS10B60KD
TO-262 IRGSL10B60KD Units
V
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
600 22 12 44 44 22 10 44 20 104 41.6 -55 to +150 300 (0.063 in. (1.6mm) from case)
A
s A V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state) Weight
Min.
--- --- --- --- --- ---
Typ.
--- --- 0.50 --- --- 1.44
Max.
0.8 3.4 --- 62 40 ---
Units
C/W
g
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1
4/19/02
IRGS/SL10B60KD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on) VGE(th)
VGE(th)/TJ
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
gfe ICES VFM IGES
Min. 600 --- 1.5 --- Gate Threshold Voltage 3.5 Temperature Coeff. of Threshold Voltage --- Forward Transconductance --- Zero Gate Voltage Collector Current --- --- Diode Forward Voltage Drop --- --- Gate-to-Emitter Leakage Current ---
Typ. --- 0.3 1.80 2.20 4.5 -10 7.0 3.0 300 1.30 1.30 ---
Max. Units Conditions --- V VGE = 0V, IC = 500A --- V/C VGE = 0V, IC = 1.0mA, (25C-150C) 2.20 IC = 10A, VGE = 15V 2.50 V IC = 10A, VGE = 15V TJ = 150C 5.5 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 1.0mA, (25C-150C) --- S VCE = 50V, IC = 10A, PW=80s 30 A VGE = 0V, VCE = 600V 700 VGE = 0V, VCE = 600V, TJ = 150C 1.45 IC = 10A 1.45 V IC = 10A TJ = 150C 100 nA VGE = 20V
Ref.Fig.
5, 6,7 9, 10,11 9,10,11
8
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Short Circuit Safe Operting Area Reverse Recovery energy of the diode Diode Reverse Recovery time Diode Peak Reverse Recovery Current Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Ref.Fig. Max. Units Conditions --- IC = 10A --- nC VCC = 400V CT1 --- VGE = 15V CT4 247 J IC = 10A, VCC = 400V 360 VGE = 15V,RG = 47, L = 200H 607 Ls = 150nH TJ = 25CQ 39 IC = 10A, VCC = 400V 29 VGE = 15V, RG = 47, L = 200H CT4 262 ns Ls = 150nH, TJ = 25C 32 CT4 340 IC = 10A, VCC = 400V 13,15 464 J VGE = 15V,RG = 47, L = 200H WF1WF2 804 Ls = 150nH TJ = 150C Q 14, 16 34 IC = 10A, VCC = 400V CT4 37 VGE = 15V, RG = 47, L = 200H 274 ns Ls = 150nH, TJ = 150C WF1 34 WF2 --- VGE = 0V --- pF VCC = 30V --- f = 1.0MHz 4 TJ = 150C, IC = 44A, Vp =600V FULL SQUARE VCC = 500V, VGE = +15V to 0V,RG = 47 CT2 CT3 s TJ = 150C, Vp =600V,RG = 47 10 --- --- WF4 VCC = 360V, VGE = +15V to 0V 17,18,19 --- 245 330 J TJ = 150C 20, 21 --- 90 105 ns VCC = 400V, IF = 10A, L = 200H CT4,WF3 --- 19 22 A VGE = 15V,RG = 47, Ls = 150nH
Typ. 38 4.3 16.3 140 250 390 30 20 230 23 230 350 580 25 28 250 26 620 62 22
Q Energy losses include "tail" and diode reverse recovery.
2
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IRGS/SL10B60KD
25 180 160 20 140 120
Ptot (W)
0 20 40 60 80 100 120 140 160
15
IC (A)
100 80 60
10
5
40 20
0 T C (C)
0 0 20 40 60 80 100 120 140 160 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
100
100
10
10 s 20 s
IC A)
10
IC (A)
1
DC
100 s 1ms
1
0.1 1 10 100 VCE (V) 1000 10000
0 10 100 1000
VCE (V)
Fig. 3 - Forward SOA TC = 25C; TJ 150C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
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3
IRGS/SL10B60KD
40 35 30 25 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V 40 35 30 25 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V
ICE (A)
20 15 10 5 0 0 1 2 3 VCE (V) 4 5 6
ICE (A)
20 15 10 5 0 0 1 2 3 VCE (V) 4 5 6
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
40 35 30 25 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
40 35 30 25 -40C 25C 150C
ICE (A)
IF (A)
20 15 10 5 0 0 1 2 3 VCE (V) 4 5 6
20 15 10 5 0 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 3.0
Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s
Fig. 8 - Typ. Diode Forward Characteristics tp = 80s
4
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IRGS/SL10B60KD
20 18 16 14 20 18 16 14
10 8 6 4 2 0 5 10 VGE (V)
ICE = 10A ICE = 15A
VCE (V)
VCE (V)
12
ICE = 5.0A
12 10 8 6 4 2 0
ICE = 5.0A ICE = 10A ICE = 15A
15
20
5
10 VGE (V)
15
20
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
20 18 16
80 70 60 T J = 25C T J = 150C
14
VCE (V)
10 8 6
ICE (A)
12
ICE = 5.0A ICE = 10A ICE = 15A
50 40 30 20 T J = 150C T J = 25C 0 5 10 VGE (V) 15 20
4 2 0 5 10 VGE (V) 15 20 10 0
Fig. 11 - Typical VCE vs. VGE TJ = 150C
Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
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IRGS/SL10B60KD
800 700 600 tdOFF EOFF
1000
Energy (J)
500 400 300 200 100 0 0 5
Swiching Time (ns)
100
EON
tdON tF
10 0
tR
5 10 15 20 25
10 IC (A)
15
20
25
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=200H; VCE= 400V RG= 47; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=200H; VCE= 400V RG= 47; VGE= 15V
500 450 400
1000
EOFF tdOFF
300 250 200 150 100 50 0 0 50 100 150
EON
Swiching Time (ns)
350
Energy (J)
100
tdON tR tF
10 0 50 100 150
RG ( )
RG ( )
Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L=200H; VCE= 400V ICE= 10A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L=200H; VCE= 400V ICE= 10A; VGE= 15V
6
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IRGS/SL10B60KD
25
R G = 10 R G = 22 R G = 47
25
20
20
IRR (A)
10
R G = 100
IRR (A)
15
15
10
5
5
0 0 5 10 15 20 25
0 0 50 100 150
IF (A)
RG (
Fig. 17 - Typical Diode IRR vs. IF TJ = 150C
Fig. 18 - Typical Diode IRR vs. RG TJ = 150C; IF = 10A
25
1200 10 1100 22
20
1000 47
IRR (A)
15
Q RR (C)
900 100 800 700 600 20A 10A
10
5
500 400
0 500 1000 1500
5.0A
0
0
500
1000
1500
diF /dt (A/s)
diF /dt (A/s)
Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 10A; TJ = 150C
Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150C
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IRGS/SL10B60KD
450 400 350 300
10 22
Energy (J)
250 200 150 100 50 0 0 5 10 15 20
47 100
25
IF (A)
Fig. 21 - Typical Diode ERR vs. IF TJ = 150C
1000
16 Cies 14 300V 12 400V
Capacitance (pF)
10
VGE (V)
100
Coes
8 6
Cres
4 2 0
10 1 10 100
0
10
20
30
40
VCE (V)
Q G , Total Gate Charge (nC)
Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 23 - Typical Gate Charge vs. VGE ICE = 10A; L = 600H
8
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IRGS/SL10B60KD
1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10 0.05 0.01 0.02
J J 1
R1 R1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) i (sec) 0.19 0.000134 0.161 0.192 0.000565 0.0083
1
2
0.01
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-6 1E-5 1E-4 1E-3 1E-2
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1E-1
1E+0
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05 0.01 0.02
R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.1
J
Ri (C/W) i (sec) 0.564 0.000149 1.22 0.762 0.001575 0.027005
1
2
Ci= i/Ri Ci i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGS/SL10B60KD
L
L VC C DUT
0
80 V +
DUT
480V
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diod e cla mp / DUT
L
Driver
D C
360V
- 5V DUT / D R IV ER
Rg
DUT
V CC
Fig.C.T.3 - S.C.SOA Circuit
R=
Fig.C.T.4 - Switching Loss Circuit
VC C IC M
DU T
Rg
VC C
Fig.C.T.5 - Resistive Load Circuit
10
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IRGS/SL10B60KD
600 500 400 300 tf 200
5% V CE
12 10 8 6 4 2 0
Eof f Loss
600 500 400
TEST CURRENT
30 25 20 15
90% test current 10% test current
90% ICE
VCE (V)
VCE (V)
ICE (A)
200 100 0 tr
10 5 0
100 0 -100 -0.20
5% ICE
5% V CE
Eon Loss 0.00 0.20 0.40 0.60 -2 0.80 -100 15.90 16.00 16.10 -5 16.20
time(s)
time (s)
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4
100 QRR 0 tRR -100 -200 -300 -400 -500 -600 -0.15
Peak IRR 10% Peak IRR
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4
400 VCE 350 300 250 ICE 100
15 10 5 0
VCE (V)
200 150
50
-5 -10 -15 -20 0.25
100 50 0 -5.00 0 15.00
-0.05
0.05
0.15
0.00
5.00
10.00
time (S)
time (S)
Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150C using Fig. CT.4
Fig. WF4- Typ. S.C Waveform @ TJ = 150C using Fig. CT.3
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ICE (A)
VF (V)
IF (A)
11
ICE (A)
300
IRGS/SL10B60KD
D2Pak Package Outline
D2Pak Part Marking Information
T HIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INTERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L
12
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IRGS/SL10B60KD
TO-262 Package Outline
IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER
DATE CODE YEAR 7 = 1997 WEEK 19 LINE C
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IRGS/SL10B60KD
D2Pak Tape & Reel Information
TRR
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4.1 0 (.1 6 1 ) 3.9 0 (.1 5 3 )
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 )
F E E D D IR E C T IO N
1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 )
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )
1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TRL
1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 )
F E E D D IR E C T IO N
1 3 .5 0 ( .5 3 2 ) 1 2 .8 0 ( .5 0 4 )
2 7 .4 0 (1 .0 7 9 ) 2 3 .9 0 (.9 4 1 ) 4
330.00 (14.173) MA X .
6 0 .0 0 (2 .3 6 2) M IN .
N O TE S : 1 . C O M F O R M S T O EIA -4 1 8 . 2 . C O N T R O L L IN G D IM EN S IO N : M IL L IM ET ER . 3 . D IM E NS IO N M EA SU R E D @ H U B. 4 . IN C L U D ES F L AN G E D IST O R T IO N @ O U T ER ED G E.
26.40 (1.039) 24.40 (.961) 3
3 0 .4 0 (1 .1 9 7 ) M A X. 4
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 4/02
14
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