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| Preliminary Data Sheet PD - 9.1029A IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, VGE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 1200V VCE(sat) 3.4V @VGE = 15V, IC = 18A n-chan nel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. T O -2 4 7 A C Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM t sc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 31 18 62 62 10 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --------------------- Typ. -----0.24 -----6 (0.21) Max. 0.77 -----40 ------ Units C/W g (oz) 8/4/97 IRGPH40M Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 1200 Emitter-to-Collector Breakdown Voltage 20 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---Collector-to-Emitter Saturation Voltage ---VCE(on) ------VGE(th) Gate Threshold Voltage 3.0 VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---Forward Transconductance 4.0 gfe I CES Zero Gate Voltage Collector Current ------I GES Gate-to-Emitter Leakage Current ---V(BR)CES V(BR)ECS Typ. ------1.1 2.3 3.0 2.8 ----14 10 ---------Max. Units Conditions ---V VGE = 0V, IC = 250A ---V VGE = 0V, IC = 1.0A ---- V/C VGE = 0V, IC = 1.0mA 3.4 IC = 18A ---V IC = 31A VGE = 15V ---IC = 18A, TJ = 150C 5.5 V CE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 18A 250 A VGE = 0V, VCE = 1200V 3500 VGE = 0V, VCE = 1200V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions ---50 75 IC = 18A ---11 21 nC V CC = 400V ---15 30 VGE = 15V ---30 ---TJ = 25C ---21 ---ns IC = 18A, VCC = 960V ---- 400 890 VGE = 15V, RG = 10 ---- 390 740 Energy losses include "tail" ---- 1.1 ------- 4.0 ---mJ ---- 5.1 8.0 10 ------s VCC = 720V, TJ = 125C VGE = 15V, RG = 10, VCPK < 1000V ---28 ---TJ = 150C, ---24 ---ns IC = 18A, VCC = 960V ---- 600 ---VGE = 15V, RG = 10 ---- 870 ---Energy losses include "tail" ---- 9.0 ---mJ ---13 ---nH Measured 5mm from package ---- 1360 ---VGE = 0V ---- 100 ---pF VCC = 30V ---15 --- = 1.0MHz Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 5.0s, single shot. VCC =80%(VCES), VGE=20V, L=10H, RG= 10 Pulse width 80s; duty factor 0.1%. |
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