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| PD - 9.1138 IRGPH20S INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 1200V VCE(sat) 3.3V @VGE = 15V, IC = 6.6A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 10 6.6 20 20 20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 2.1 -- 40 -- Units C/W g (oz) Revision 0 C-39 IRGPH20S Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 20 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 1.3 -- V/C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage -- 2.2 3.3 IC = 6.6A VGE = 15V -- 2.9 -- V IC = 10A See Fig. 2, 5 -- 2.9 -- IC = 6.6A, T J = 150C Gate Threshold Voltage 3.0 -- 5.5 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -12 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 1.5 3.0 -- S VCE = 100V, IC = 6.6A Zero Gate Voltage Collector Current -- -- 250 A VGE = 0V, VCE = 1200V -- -- 1000 VGE = 0V, VCE = 1200V, T J = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 16 24 IC = 6.6A 5.8 8.7 nC VCC = 400V See Fig. 8 4.0 6.0 VGE = 15V 28 -- TJ = 25C 32 -- ns IC = 6.6A, V CC = 960V 930 1400 VGE = 15V, RG = 50 850 1550 Energy losses include "tail" 0.57 -- 5.4 -- mJ See Fig. 9, 10, 11, 14 6.0 9.0 28 -- TJ = 150C, 45 -- ns IC = 6.6A, V CC = 960V 1100 -- VGE = 15V, RG = 50 1800 -- Energy losses include "tail" 10 -- mJ See Fig. 10, 14 13 -- nH Measured 5mm from package 360 -- VGE = 0V 24 -- pF VCC = 30V See Fig. 7 4.8 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(VCES), VGE=20V, L=10H, RG= 50, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-40 IRGPH20S 15 F o r b o th : Tria n g u la r w a v e : 12 Load Current (A) D u ty c y c le : 5 0 % TJ = 1 2 5 C T s in k = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 1 5 W C la m p v o lta g e : 8 0 % o f ra te d 9 S q u are w av e: 6 0 % o f ra te d v o lta g e 6 3 Id e a l d io d e s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 100 100 IC , Collector-to-Emitter Current (A) TJ = 25C 10 TJ = 150C IC , Collector-to-Emitter Current (A) 10 TJ = 150C TJ = 25C 1 0.1 0.1 1 VGE = 15V 20s PULSE WIDTH A 10 1 5 10 VCC = 100V 5s PULSE WIDTH A 15 20 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-41 IRGPH20S 10 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) VGE = 15V 5.0 VGE = 15V 80s PULSE WIDTH I C = 10A 8 4.0 6 3.0 I C = 6.6A 4 2.0 I C = 3.3A 2 1.0 0 25 50 75 100 125 A 150 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TC , Case Temperature (C) TC, Case Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T he rm al R e sp ons e (Z thJ C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 0 .0 5 PD M 0.1 0 .0 2 0 .0 1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s: 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0.01 0.00001 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-42 IRGPH20S 600 500 VGE , Gate-to-Emitter Voltage (V) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 VCE = 400V I C = 6.6A 16 C, Capacitance (pF) 400 Cies 12 300 200 Coes 8 4 100 Cres 0 1 10 A 100 0 0 4 8 12 16 A 20 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.60 Total Switching Losses (mJ) 5.56 Total Switching Losses (mJ) VCC = 960V VGE = 15V T C = 25C I C = 6.6A 100 RG = 50 V GE = 15V V CC = 960V 5.52 I C = 10A 10 I C = 6.6A 5.48 I C = 3.3A 5.44 5.40 0 10 20 30 40 50 A 60 1 -60 A -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance () TC , Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-43 IRGPH20S 16 100 12 IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG = 50 T C = 150C V CC = 960V V GE = 15V VGE = 20V TJ = 125C 10 SAFE OPERATING AREA 8 1 4 0 0 2 4 6 8 10 A 12 0.1 1 10 100 1000 A 10000 I C , Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix G: Section D - page D-9 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13 C-44 |
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