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| PD - 9.692 IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) 1.8V @VGE = 15V, IC = 31A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. TO -2 4 7 AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C I CM ILM VGE EARV PD @ T C = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 50 31 240 240 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --------------------- Typ. -----0.24 -----6 (0.21) Max. 0.77 -----40 ------ Units C/W g (oz) IRGPC40S Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 20 V(BR)CES /T J Temperature Coeff. of Breakdown Voltage---VCE(on) Collector-to-Emitter Saturation Voltage ---------VGE(th) Gate Threshold Voltage 3.0 V GE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance 12 Zero Gate Voltage Collector Current ---ICES ---IGES Gate-to-Emitter Leakage Current ---V(BR)CES V(BR)ECS Typ. ------0.75 1.6 2.2 1.7 ----9.3 21 ---------Max. Units Conditions ---V VGE = 0V, IC = 250A ---V VGE = 0V, IC = 1.0A ---- V/C VGE = 0V, IC = 1.0mA 1.8 IC = 31A VGE = 15V See Fig. 2, 5 ---V IC = 60A ---IC = 31A, TJ = 150C 5.5 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 31A 250 A VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Q gc t d(on) tr t d(off) tf Eon Eoff Ets t d(on) tr t d(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------Typ. 62 10 27 28 50 1100 620 1.0 12 13 29 53 1600 1200 22 7.5 1600 140 20 Max. Units Conditions 90 IC = 31A 15 nC VCC = 400V See Fig. 8 40 VGE = 15V ---TJ = 25C ---ns IC = 31A, VCC = 480V 1500 VGE = 15V, RG = 10 1100 Energy losses include "tail" ------mJ See Fig. 9, 10, 11, 14 20 ---TJ = 150C, ---ns IC = 31A, VCC = 480V ---VGE = 15V, RG = 10 ---Energy losses include "tail" ---mJ See Fig. 10, 14 ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz Notes: Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 5.0s, single shot. VCC=80%(VCES), VGE=20V, L=10H, RG= 10, ( See fig. 13a ) Pulse width 80s; duty factor 0.1%. IRGPC40S 80 For both: Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 35W Triangular wave: LOAD CURRENT (A) 60 Clamp voltage: 80% of rated Square wave: 40 60% of rated voltage 20 Ideal diodes 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK ) 1000 1000 I C, Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) TJ = 25C TJ = 150C 100 TJ = 25C 100 TJ = 150C 10 10 1 0.1 VGE = 15V 20s PULSE WIDTH 1 10 1 5 10 VCC = 100V 5s PULSE WIDTH 15 20 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics IRGPC40S 70 VGE = 15V 3.0 Maximum DC Collector Current (A) 60 VCE , Collector-to-Emitter Voltage (V) LIMITED BY PACKAGE VGE = 15V 80s PULSE WIDTH I C = 62A 2.5 50 40 2.0 30 I C = 31A 20 1.5 10 I C = 16A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , Case Temperature (C) TC , Case Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 Thermal Response (Z thJC) D = 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 2 P DM t 0.02 0.01 1 t2 0.01 0.00001 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case IRGPC40S 3000 VGE, Gate-to-Emitter Voltage (V) 100 V GE = 0V, f = 1MHz Cies = Cge + C gc , Cce SHORTED Cres = C gc Coes = C ce + C gc 20 VCE = 400V I C = 31A 16 Cies C, Capacitance (pF) 2000 12 Coes 1000 8 Cres 4 0 1 10 0 0 10 20 30 40 50 60 V CE , Collector-to-Emitter Voltage (V) Q g , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 14.6 Total Switching Losses (mJ) 14.4 14.2 Total Switching Losses (mJ) VCC VGE TC IC = 480V = 15V = 25C = 31A 100 RG = 10 V GE = 15V V CC = 480V I C = 62A I C = 31A I C = 16A 14.0 10 13.8 13.6 13.4 13.2 0 10 20 30 40 50 60 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , Gate Resistance ( ) W TC , Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature IRGPC40S 50 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG = 10 T C = 150C VCC = 480V 40 VGE = 15V 1000 VGE = 20V GE TJ = 125C 100 30 SAFE OPERATING AREA 20 10 10 0 0 10 20 30 40 50 60 70 1 1 10 100 1000 I C , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 15.90 ( .626) 15.30 ( .602) -B- 3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217) -D- 5.30 ( .209) 4.70 ( .185) 2.50 (.089) 1.50 (.059) 4 NO TES: 1 DIMENSIO NS & T OLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIO NS ARE SHOW N MILLIMETE RS (INCHES). 4 CONFO RM S TO JEDEC OUTLINE T O-247AC. 20.30 (.800) 19.70 (.775) 1 2X 5.50 (.217) 4.50 (.177) 2 3 -C- LEAD ASSIGNMENT S 1 - GAT E 2 - CO LLECTO R 3 - EMIT TER 4 - CO LLECTO R * 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 4.30 (.170) 3.70 (.145) 1.40 (.056) 3X 1.00 (.039) 0.25 ( .010) M 3.40 (.133) 3.00 (.118) 0.80 ( .031) 3X 0.40 ( .016) 2.60 (.102) 2.20 (.087) * LO NGE R LEADED (20m m) VERS ION AVAILAB LE (TO-247AD) TO ORDE R ADD "-E " SUFF IX TO PART NUMBER 5.45 (.215) 2X CA S CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) Dimensions in Millimeters and (Inches) IRGPC40S L 50V 1000V VC * 0 - 480V D.U.T. RL = 480V 4 X IC@25C 480F 960V Q R * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V Q 1000V R S Q R 90% S VC 90% 10% Fig. 14b - Switching Loss Waveforms t d(off) 10% I C 5% t d(on) tr Eon Ets = (Eon +Eoff ) tf t=5s Eoff |
Price & Availability of 1986
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