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| PD - 9.780 IRGP430U INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) 3.0V @VGE = 15V, IC = 15A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. TO -2 4 7 AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C I CM ILM VGE EARV PD @ T C = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 500 25 15 50 50 20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --------------------- Typ. -----0.24 -----6 (0.21) Max. 1.2 -----40 ------ Units C/W g (oz) IRGP430U Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 500 Emitter-to-Collector Breakdown Voltage 20 V(BR)CES /T J Temperature Coeff. of Breakdown Voltage---VCE(on) Collector-to-Emitter Saturation Voltage ---------VGE(th) Gate Threshold Voltage 3.0 V GE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance 2.3 Zero Gate Voltage Collector Current ---ICES ---IGES Gate-to-Emitter Leakage Current ---V(BR)CES V(BR)ECS Typ. ------0.46 2.3 2.8 2.6 ----11 8.1 ---------Max. Units Conditions ---V VGE = 0V, IC = 250A ---V VGE = 0V, IC = 1.0A ---- V/C VGE = 0V, IC = 1.0mA 3.0 IC = 15A VGE = 15V See Fig. 2, 5 ---V IC = 25A ---IC = 15A, TJ = 150C 5.5 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 15A 250 A VGE = 0V, VCE = 500V 1000 VGE = 0V, VCE = 500V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Q gc t d(on) tr t d(off) tf Eon Eoff Ets t d(on) tr t d(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------Typ. 31 6.2 12 29 11 91 66 0.24 0.17 0.41 13 27 130 130 0.76 13 660 110 12 Max. Units Conditions 47 IC = 15A 9.3 nC VCC = 400V See Fig. 8 19 VGE = 15V ---TJ = 25C ---ns IC = 15A, VCC = 400V 160 VGE = 15V, RG = 23 120 Energy losses include "tail" ------mJ See Fig. 9, 10, 11, 14 0.61 ---TJ = 150C, ---ns IC = 15A, VCC = 400V ---VGE = 15V, RG = 23 ---Energy losses include "tail" ---mJ See Fig. 10, 14 ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz Notes: Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 5.0s, single shot. VCC=80%(VCES), VGE=20V, L=10H, RG= 23, ( See fig. 13a ) Pulse width 80s; duty factor 0.1%. IRGP430U 40 For both: Triangular wave: LOAD CURRENT (A) 30 Duty cycle: 50% T = 125C J Tsink = 90C Gate drive as specified Power Dissipation = 24W Clamp voltage: 80% of rated Square wave: 20 60% of rated voltage 10 Ideal diodes 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK ) 100 1000 I C , Collector-to-Emitter Current (A) TJ = 25C TJ = 150C 10 IC , Collector-to-Emitter Current (A) 100 TJ = 150C 10 TJ = 25C 1 1 1 VGE = 15V 20s PULSE WIDTH 10 0.1 5 10 VCC = 100V 5s PULSE WIDTH 15 20 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics IRGP430U 25 VGE = 15V 4.5 VGE = 15V 80s PULSE WIDTH VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 4.0 20 3.5 IC = 30A 15 3.0 10 2.5 I C = 15A 2.0 5 1.5 I C = 7.5A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (C) TC , Case Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t 2 Notes: 1. Duty fact or D = t 1 /t 2 0.01 0.00001 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case IRGP430U 1400 C, Capacitance (pF) 1000 C ies Coes 800 600 VGE , Gate-to-Emitter Voltage (V) 1200 V GE = 0V, f = 1MHz Cies = Cge + C gc , Cce SHORTED Cres = C gc Coes = C ce + C gc 20 VCE = 400V I C = 15A 16 12 8 400 Cres 4 200 0 1 10 100 0 0 10 20 30 40 V CE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.48 Total Switching Losses (mJ) 0.46 0.44 Total Switching Losses (mJ) VCC = 400V VGE = 15V TC = 25C I C = 15A 10 RG = 50 V GE = 15V V CC = 400V I C = 30A 1 0.42 I C = 15A 0.40 I C = 7.5A 0.38 0 10 20 30 40 50 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , Gate Resistance ( ) W TC, Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature IRGP430U 2.0 IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG = 23 T C = 150C V CC = 400V 1.6 V GE = 15V 100 VGE = 20V TJ = 125C SAFE OPERATING AREA 1.2 10 0.8 0.4 0.0 0 10 20 30 40 1 1 10 100 A 1000 I C , Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 15.90 ( .626) 15.30 ( .602) -B- 3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217) -D- 5.30 ( .209) 4.70 ( .185) 2.50 (.089) 1.50 (.059) 4 NO TES: 1 DIMENSIO NS & T OLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIO NS ARE SHOW N MILLIMETE RS (INCHES). 4 CONFO RM S TO JEDEC OUTLINE T O-247AC. 20.30 (.800) 19.70 (.775) 1 2X 5.50 (.217) 4.50 (.177) 2 3 -C- LEAD ASSIGNMENT S 1 - GAT E 2 - CO LLECTO R 3 - EMIT TER 4 - CO LLECTO R * 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 4.30 (.170) 3.70 (.145) 1.40 (.056) 3X 1.00 (.039) 0.25 ( .010) M 3.40 (.133) 3.00 (.118) 0.80 ( .031) 3X 0.40 ( .016) 2.60 (.102) 2.20 (.087) * LO NGE R LEADED (20m m) VERS ION AVAILAB LE (TO-247AD) TO ORDE R ADD "-E " SUFF IX TO PART NUMBER 5.45 (.215) 2X CA S CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) Dimensions in Millimeters and (Inches) IRGP430U L 50V 1000V VC * 0 - 400V D.U.T. RL = 400V 4 X IC@25C 480F 960V Q R * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 400V Q 1000V R S Q R 90% S VC 90% 10% Fig. 14b - Switching Loss Waveforms t d(off) 10% I C 5% t d(on) tr Eon Ets = (Eon +Eoff ) tf t=5s Eoff |
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