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| TLN227(F) TOSHIBA Infrared LED GaAAs Infrared Emitter TLN227(F) Lead Free Product For Space-Optical-Transmission * * * * * * High radiant power: Po = 18mW (typ.) at IF = 50mA Wide half-angle value: = 1 / 2 21 (typ.) High-speed response: tr, tf = 30ns (typ.) Light source for remote control Designed for transmission of wireless AVsignals purpose. Designed for high-speed data transmission Unit: mm Maximum Ratings (Ta = 25C) Characteristic Forward current Pulse forward current Power dissipation Reverse voltage Operating temperature Storage temperature Soldering temperature (5s) Symbol IF IFP PD VR Topr Tstg Tsol Rating 100 1000 (Note 1) 220 4 -25~85 -30~100 260 Unit mA mA mW V C C C 1 2 TOSHIBA 4-6J1 Pin Connection 1. 2. Anode Cathode (Note 1): Frequency = 100kHz, duty = 1% Optical And Electrical Characteristics (Ta = 25C) Characteristic Forward voltage Reverse current Radiant power Radiant intensity Rise time, fall time Cut-off frequency Capacitance Peak emission wavelength Spectral line half width Half value angle (Note 2) Symbol VF IR PO IE tr, tf fc CT P 1 2 Test Condition IF = 100mA VR = 4V IF = 50mA IF = 50mA IFP = 100mA, PW = 100ns IF = 50mADC + 5mAp-p VR = 0, f = 1MHz IF = 50mA IF = 50mA IF = 50mA Min 14 10 830 Typ. 1.8 18 100 30 15 110 870 50 5 Max 2.2 60 900 Unit V A mW mW / sr ns MHz pF nm nm (Note 2): Frequency when modulation light power decreases by 3dB from 1 MHz. 1 2004-01-06 TLN227(F) Precautions Please be careful of the followings. 1. Soldering must be performed under the lead stopper. 2. When forming the leads, bend each lead under the stopper without leaving forming stress to the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant power falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. 2 2004-01-06 TLN227(F) IF - Ta 120 100 IF - VF (typ.) 100 85C Allowable forward current IF (mA) (mA) 10 75C 50C 80 -25C 0C Forward current IF 60 1 25C 40 0.1 20 0 0 20 40 60 80 100 120 140 0.01 1 1.2 1.4 1.6 1.8 2 Ambient temperature Ta (C) Forward voltage VF (V) VF - Ta 1.9 (typ.) 1000 500 300 IFP - VFP (typ.) (V) IFP Pulse Forward Current IF = 20mA IF = 5mA 1.7 1.6 1.5 1.4 1.3 1.2 1.1 -50 IF = 80mA IF = 50mA (mA) 1.8 VF 100 50 30 Forward voltage 10 5 3 Pulse width 100s Repetitive frequency = 100Hz Ta = 25C 1 2 3 4 5 6 25 0 25 50 75 100 125 1 0 Ambient temperature Ta (C) Pulse forward voltage VFP (V) IFP - PW 20000 10000 5000 3000 Ta = 25C 1.2 Pulse width = 1ms 1.0 Duty = 10% Relative PO - IFP (typ.) Allowable pulse forward current IFP (mA) Relative radiant power 0.8 1000 500 300 1k 2k 5k 10k f = 100Hz 200 500 0.6 0.4 100 50 30 3 0.2 10 30 100 300 1m 3m 10m 0 0 200 4000 600 800 1000 Pulse width PW (s) Pulse forward current IFP (mA) 3 2004-01-06 TLN227(F) Relative PO - Ta 10 (typ.) 1000 Distance Characteristics Relative radiant power (A) ISC IF = 50mA 1 100 Pop = 23mW at IFP = 180mA, f = 100kHz, duty = 50% TPS703(F) short circuit current 10 0.1 -50 -25 0 25 50 75 100 125 Po = 14mW at IF = 50mA Ambient temperature Ta (C) 1 Wavelength Characteristic 1.0 (typ.) IF = 50mA 0.1 0.01 0.1 1 10 Distance 0.8 d (m) Relative radiant power 0.6 0.4 0.2 0 800 840 880 920 960 1000 Wavelength (nm) Radiation Pattern (typ.) Ta = 25C 4 2 0 Frequency Characteristic (typ.) 20 30 40 50 60 70 80 90 10 10 20 30 40 50 60 70 80 90 1.0 (dB) Response 0.8 0 -2 -4 -6 -8 -10 0.1 0 0.2 0.4 0.6 0.3 0.5 1 3 5 10 30 50 100 Relative radiant power Frequency f (MHz) 4 2004-01-06 TLN227(F) RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAC * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. 5 2004-01-06 |
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