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| Ordering number:ENN3962A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode FP103 DC/DC Converter Applications Features * Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting. * The FP103 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB07-03C, placed in one package. Package Dimensions unit:mm 2088A 4.5 3.4 2.8 0.5 1.8 0.5 7 6 [FP103] 1.5 0.4 0.5 0.5 1.57 4 5 3 1.75 3.5 1.2 2 1.75 1 4.25max 2.5 1.0 0.2min 0.3 0 to 0.1 0.2 Specifications Absolute Maximum Ratings at Ta = 25C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Strage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2x0.8mm) Symbol Conditions 1 : Base 2 : Common (Collector/Cathode) 3 : Emitter 4 : Common (Collector/Cathode) 5 : Anode 6 : Common (Collector/Cathode) 7 : Common (Collector/Cathode) SANYO : PCP4 0.7 Ratings -30 -25 -6 -2 -5 -400 1.3 150 -55 to +150 30 35 700 5 -55 to +125 -55 to +125 Unit V V V A A mA W C C V V mA A C C Marking:103 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80700TS (KOTO)/52098HA (KT)/62094MT (KOTO) AX-8057 No.3962-1/5 FP103 Electrical Characteristics at Ta = 25C .Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR C trr Rthj-a IR=300A IF=700mA VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit Mounted on a ceramic board (250mm2x0.8mm) 120 28 10 30 0.55 80 V V A pF ns ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-100mA VCE=-2V, IC=-1.5A VCE=-10V, IC=-50mA VCB=-10V, f=1MHz IC=-1.5A, IB=-75mA IC=-1.5A, IB=-75mA -30 -25 -6 60 350 25 140 65 150 32 -0.35 -0.85 -0.6 -1.2 MHz pF V V V V V ns ns ns -0.1 -0.1 560 A A Symbol Conditons Ratings min typ max Unit V(BR)CBO IC=-10A, IE=0 V(BR)CEO IC=-1mA, RBE= V(BR)EBO IE=-10A, IC=0 ton tstg tf See specified Test Circuit See specified Test Circuit See specified Test Circuit Electrical Connection C C C B E C A (Top view) Switching Time Test Circuit [TR] IB2 OUTPUT IB1 1k VR 50 + 220F VBE= 5V + 470F VCC= --12V 10s RL --5V 50 100 10 [SBD] 100mA 100mA Duty10% PW=20s D.C.1% INPUT 10mA trr --20IB1=20IB2=IC= --500mA No.3962-2/5 FP103 --2.0 IC -- VCE 0m A --16m A [TR] --2.5 IC -- VBE [TR] VCE= --2V Collector Current, IC - A --10mA --8mA Collector Current, IC - A --1 8 --1.6 --14mA --12mA mA --2 --2.0 --1.2 --1.5 --0.8 --4mA --2mA --1.0 --0.4 --0.5 0 0 --0.4 --0.8 --1.2 IB=0 --1.6 --2.0 ITR09910 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 ITR09911 Collector-to-Emitter Voltage, VCE - V 1000 7 5 Base-to-Emitter Voltage, VBE - V 1000 7 hFE -- IC [TR] VCE= --2V f T -- IC Ta=75 C 25C --25C --6mA [TR] VCE= --10V Gain-Bandwidth Product, f T - MHz 5 7 --0.1 2 3 5 7 --1.0 2 3 5 5 3 2 DC Current Gain, hFE 3 2 Ta=75C 25C --25C 100 7 5 3 2 10 --0.01 100 7 5 3 2 5 7 --0.01 2 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC - A 2 ITR09912 Collector Current, IC - A --1000 7 ITR09913 Cob -- VCB [TR] f=1MHz VCE(sat) -- IC [TR] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 5 3 2 --100 7 5 3 2 --10 7 5 Output Capacitance, Cob - pF 100 7 5 3 25C = Ta 75 C C 5 --2 2 10 --1.0 2 3 5 7 --10 2 3 5 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector-to-Base Voltage, VCB - V 3 ITR09914 Collector Current, IC - A --10 7 5 ITR09915 VBE(sat) -- IC [TR] IC / IB=20 ICP ASO 10 10 0m ms s 1m [TR] Base-to-Emitter Saturation Voltage, VBE (sat) - V 2 s Collector Current, IC - A 3 2 --1.0 7 5 3 2 --0.1 7 5 IC --1.0 25C DC Ta= --25C 75C op era tio 7 n 5 3 5 7 --0.01 2 3 3 Ta=25C Single pulse Mounted on a ceramic board(250mm2x0.8mm) 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector Current, IC - A 5 7 --0.1 2 3 5 7 --1.0 2 3 5 ITR09916 Collector-to-Emitter Voltage, VCE - V ITR09917 No.3962-3/5 FP103 1.4 1.3 PC -- Ta M ou nte do na [TR] Collector Dissipation, PC - mW 1.2 1.0 0.8 ce ram ic bo ard 0.6 0.4 (2 50 m m2 x0 .8 m m ) 0.2 0 0 20 Ambient Temperature, Ta - C 40 60 80 100 120 140 160 ITR09918 2 1.0 7 5 3 2 0.1 7 5 IF -- VF [Di] 3 2 1000 5 3 2 100 5 3 2 10 5 3 2 1.0 5 3 2 0.1 5 3 0 10 20 IR -- VR Ta=125 C [Di] Reverse Current, IR - A Forward Current, IF - A 100C 75C 50C 25C 25 75C 25C 0.3 2 C 3 0.01 7 5 3 0 0.1 0.2 --25C 0.4 Ta= 1 0.5 0.6 0.7 30 40 50 60 ITR09920 Forward Voltage, VF - V 2 ITR09919 Forward Voltage, VR - V 7 C -- VR [Di] f=1MHz IS -- t IS 20ms t [Di] Current waveform 50Hz sine wave Surge Forward Current, IS (Peak) - A 7 2 3 5 7 2 3 5 7 Interterminal Capacitance, C - pF 100 7 5 3 2 6 5 4 3 10 7 5 3 1.0 2 1 0 Reverse Voltage, VR - V 10 100 ITR09921 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t - s ITR09922 No.3962-4/5 FP103 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.3962-5/5 |
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