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Datasheet File OCR Text: |
Power Transistors 2SD2573 Silicon NPN triple diffusion planar type Unit: mm For high current amplification, power amplification 3.80.2 7.50.2 4.50.2 I Features * Low collector to emitter saturation voltage VCE(sat) * Allowing automatic insertion with radial taping 10.80.2 0.650.1 2.50.1 0.850.1 1.00.1 0.8 C 90 0.8 C I Absolute Maximum Ratings TC = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC = 25C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 80 60 6 6 3 1.5 150 -55 to +150 Unit V V V A A W C C 16.01.0 0.70.1 0.70.1 1.150.2 1.150.2 0.50.1 0.8 C 1 2 3 2.050.2 0.40.1 2.50.2 2.50.2 1: Base 2: Collector 3: Emitter MT-3 (MT3 Type Package) I Electrical Characteristics TC = 25C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio * Collector to emitter saturation voltage Transition frequency Note) *: Rank classification Rank hFE P Q R IEBO VCEO hFE VCE(sat) fT Conditions VCB = 80 V, IE = 0 VCE = 40 V, IB = 0 VEB = 6 V, IC = 0 IC = 25 mA, IB = 0 VCE = 4 V, IC = 0.5 A IC = 2 A, IB = 0.05 A VCE = 12 V, IC = 0.2 A, f = 200 MHz 50 60 500 2 500 1.0 V MHz Min Typ Max 100 100 100 Unit A A A V 500 to 1 000 800 to 1 500 1 200 to 2 500 1 2SD2573 PC T a 2.0 Without heat sink 3.6 Ta=25C 3.0 Power Transistors IC VCE Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 Ta=-25C Ta=25C VCE(sat) IC IC/IB=40 Collector power dissipation PC (W) Collector current IC (A) 1.6 IB=5.0mA 2.4 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.2 1.0mA 0.5mA 1.2 1.8 0.8 0.4 0.6 0.003 0.001 0.01 0.03 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) hFE IC 2400 90 Cob VCB Collector output capacitance Cob (pF) VCE=4V IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE 2000 Ta=75C 75 1600 Ta=25C 60 1200 45 800 Ta=-25C 30 400 15 0 1 10 100 1000 0 1 10 100 Collector current IC (mA) Collector to base voltage VCB (V) 2 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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