 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BSM 30 GD 60 DN2 IGBT Power Module * Power module * 3-phase full-bridge * Including fast free-wheel diodes * Package with insulated metal base plate Type BSM 30 GD 60 DN2 BSM 30 GD 60DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE 600V 600V IC 30A 30A Package ECONOPACK 2 ECONOPACK 2K Ordering Code C67076-A2512-A67 C67070-A2512-A67 Symbol Values 600 600 Unit V VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 30 TC = 40 C Pulsed collector current, tp = 1 ms ICpuls 60 TC = 40 C Power dissipation per IGBT Ptot 125 W 150 -55 ... + 150 1.2 1.5 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Jan-10-1997 BSM 30 GD 60 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 6.5 2.7 2.8 V VGE = VCE, IC = 0.7 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 30 A, Tj = 25 C VGE = 15 V, IC = 30 A, Tj = 125 C Zero gate voltage collector current ICES 1 mA nA 100 VCE = 600 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 8 1600 170 100 - S pF - VCE = 20 V, IC = 30 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jan-10-1997 BSM 30 GD 60 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 50 - ns VCC = 300 V, VGE = 15 V, IC = 30 A RGon = 33 Rise time tr 80 - VCC = 300 V, VGE = 15 V, IC = 30 A RGon = 33 Turn-off delay time td(off) 250 - VCC = 300 V, VGE = -15 V, IC = 30 A RGoff = 33 Fall time tf 500 - VCC = 300 V, VGE = -15 V, IC = 30 A RGoff = 33 Free-Wheel Diode Diode forward voltage VF 1.6 1.4 - V IF = 30 A, VGE = 0 V, Tj = 25 C IF = 30 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr 0.15 - s IF = 30 A, VR = -300 V, VGE = 0 V diF/dt = -300 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 30 A, VR = -300 V, VGE = 0 V diF/dt = -300 A/s Tj = 25 C Tj = 125 C 1.8 3.8 - Semiconductor Group 3 Jan-10-1997 BSM 30 GD 60 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C 130 W 110 Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 tp = 52.0s A 100 s Ptot 100 90 80 70 60 50 IC 10 1 1 ms 10 0 40 30 20 10 0 0 20 40 60 80 100 120 C 160 10 -1 0 10 10 1 10 ms DC 2 3 10 V 10 TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 36 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W 10 0 IGBT IC 28 24 ZthJC 10 -1 20 D = 0.50 16 12 8 4 0 0 10 -4 -5 10 10 -3 single pulse 10 -2 0.20 0.10 0.05 0.02 0.01 20 40 60 80 100 120 C 160 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Semiconductor Group 4 Jan-10-1997 BSM 30 GD 60 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 60 A 50 17V 15V 13V 11V 9V 7V IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 60 A 50 17V 15V 13V 11V 9V 7V IC 45 40 35 30 25 20 15 10 5 0 0 IC 45 40 35 30 25 20 15 10 5 1 2 3 V 5 0 0 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 60 A 50 IC 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Jan-10-1997 BSM 30 GD 60 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 30 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 C 100 V 300 V Ciss 10 0 Coss 10 -1 Crss 6 4 2 0 0 10 -2 0 20 40 60 80 100 nC 130 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 100 200 300 400 500 600 V 800 VCE 0 0 100 200 300 400 500 600 V 800 VCE Semiconductor Group 6 Jan-10-1997 BSM 30 GD 60 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 33 10 3 t = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, IC = 30 A 10 3 tf t t tdoff tf tdoff ns ns tr 10 2 tr 10 2 tdon tdon 10 1 0 10 20 30 40 50 60 A IC 80 10 1 0 20 40 60 80 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 33 10 mWs E 8 7 6 5 4 3 2 1 0 0 Eoff E = f (RG) , inductive load , Tj = 125C par.: VCE = 300V, VGE = 15 V, IC = 30 A 5.0 mWs E 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Eoff Eon Eon 10 20 30 40 50 60 A IC 80 0 20 40 60 80 120 RG Semiconductor Group 7 Jan-10-1997 BSM 30 GD 60 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 60 A 50 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 Diode K/W IF 45 40 35 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 V 3.0 ZthJC 10 0 Tj=125C Tj=25C 10 -1 D = 0.50 0.20 0.10 10 -2 single pulse 0.05 0.02 0.01 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 8 Jan-10-1997 BSM 30 GD 60 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g Semiconductor Group 9 Jan-10-1997 |
Price & Availability of 030D06N2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |