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Power Transistors
2SD1747, 2SD1747A
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB1177
7.20.3
Unit: mm
7.00.3 3.00.2 3.50.2
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 130 150 80 100 7 15 7 15 1.3 150 -55 to +150 Unit V
0.80.2
1.10.1
0.850.1 0.40.1
1.00.2
10.0 -0.
+0.3
0.750.1
2.30.2 4.60.4
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1747 2SD1747A 2SD1747 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1
2
3
1:Base 2:Collector 3:Emitter I Type Package
3.50.2 2.00.2
7.00.3
Unit: mm
0 to 0.15
10.20.3
7.20.3
emitter voltage 2SD1747A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
3.00.2
1.0 max.
A A W C
4.60.4 0.750.1 1.10.1
2.5
0.5 max.
0.90.1 0 to 0.15
1
2
3
2.30.2
C
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1747 2SD1747A
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 5A, IB = 0.25A IC = 5A, IB = 0.25A VCE = 10V, IC = 0.5A, f = 10MHz IC = 3A, IB1 = 0.3A, IB2 = - 0.3A, VCC = 50V 30 0.5 1.5 0.1 80 100 45 90 260 0.5 1.5 V V MHz s s s min typ max 10 50 Unit A A V
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
2.50.2
1.0
V
2.50.2
1.0
V
1
Power Transistors
PC -- Ta
20 10 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25C
2SD1747, 2SD1747A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) -- IC
(1) IC/IB=10 (2) IC/IB=20 TC=25C
Collector power dissipation PC (W)
Collector current IC (A)
8 IB=55mA 6 50mA 45mA 40mA 35mA 30mA 20mA 15mA 2 10mA 5mA 0
15 (1)
3
1
(2) (1)
10
0.3
4
0.1
5
0.03
(2) 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8
10
12
0.01 0.1
0.3
1
3
10
30
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100
VBE(sat) -- IC
100
VBE(sat) -- IC
(1) IC/IB=10 (2) IC/IB=20 TC=25C
Base to emitter saturation voltage VBE(sat) (V)
10
30 10 3 1 TC=100C 0.3 0.1 -25C 0.03 0.01 0.01 0.03 25C
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=20
IC/IB=20 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C 25C
3 (1) (2)
1
0.3
0.1
0.03
0.1
0.3
1
3
10
0.01 0.1
0.3
1
3
10
30
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
hFE -- IC
10000 VCE=2V 10000 3000 1000 300 100 30 10 3 1 0.01 0.03
fT -- IC
10000
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=10V f=10MHz TC=25C IE=0 f=1MHz TC=25C
Forward current transfer ratio hFE
1000 300
Transition frequency fT (MHz)
3000
3000 1000 300 100 30 10 3 1 0.1
TC=100C 25C 100 -25C 30 10 3 1 0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
2
Power Transistors
ton, tstg, tf -- IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25C
2SD1747, 2SD1747A
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C ICP t=10ms 10 IC 3 1 0.3 0.1 0.03 0.01 300ms 1ms
Switching time ton,tstg,tf (s)
10 3 1 0.3 0.1 0.03 0.01 0 1 2 3 4
tstg ton tf
Collector current IC (A)
5
6
7
8
1
3
10
30
100
2SD1747A
300
2SD1747
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
Rth(t) -- t
103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
102
(1) (2)
10
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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