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| W28J160B/T 16M (1M x 16/2M x 8) BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION.................................................................................................................. 3 2. FEATURES ......................................................................................................................................... 3 3. PRODUCT OVERVIEW ...................................................................................................................... 4 4. BLOCK DIAGRAM .............................................................................................................................. 5 Block Organization ............................................................................................................................ 6 5. PIN CONFIGURATION ....................................................................................................................... 6 6. PIN DESCRIPTION ............................................................................................................................. 7 7. PRINCIPLES OF OPERATION........................................................................................................... 8 Data Protection.................................................................................................................................. 8 8. BUS OPERATION ............................................................................................................................. 10 Read ................................................................................................................................................ 10 Output Disable................................................................................................................................. 10 Standby ........................................................................................................................................... 10 Reset ............................................................................................................................................... 10 Read Identifier Codes ..................................................................................................................... 11 Write ................................................................................................................................................ 11 9. COMMAND DEFINITIONS................................................................................................................ 13 Read Array Command .................................................................................................................... 14 Read Identifier Codes Command.................................................................................................... 15 Read Status Register Command .................................................................................................... 15 Clear Status Register Command .................................................................................................... 16 Block Erase Command ................................................................................................................... 16 Full Chip Erase Command .............................................................................................................. 16 Word/Byte Write Command ............................................................................................................ 17 Block Erase Suspend Command .................................................................................................... 17 Word/Byte Write Suspend Command ............................................................................................. 18 Set Block and Permanent Lock-Bit Commands.............................................................................. 18 Clear Block Lock-Bits Command .................................................................................................... 19 Block Locking by the #WP .............................................................................................................. 19 -1- Publication Release Date: April 7, 2003 Revision A4 W28J160B/T 10. DESIGN CONSIDERATIONS ......................................................................................................... 29 Three-line Output Control................................................................................................................ 29 RY/#BY and WSM Polling ............................................................................................................... 29 Power Supply Decoupling ............................................................................................................... 29 VPP Trace on Printed Circuit Boards............................................................................................... 29 VDD, VPP, #RESET Transitions....................................................................................................... 29 Power-up/Down Protection ............................................................................................................. 30 Power Dissipation............................................................................................................................ 30 Data Protection Method .................................................................................................................. 30 11. ELECTRICAL SPECIFICATIONS ................................................................................................... 31 Absolute Maximum Ratings* ........................................................................................................... 31 Operating Conditions ...................................................................................................................... 31 Capacitance(1) ................................................................................................................................ 32 AC Input/Output Test Conditions .................................................................................................... 32 DC Characteristics .......................................................................................................................... 33 AC Characteristics - Read-only Operations(1) ............................................................................... 35 AC Characteristics - Write Operations(1)........................................................................................ 38 Alternative #CE-Controlled Writes(1).............................................................................................. 40 Reset Operations ............................................................................................................................ 42 Block Erase, Full Chip Erase, Word/Byte Write And Lock-Bit Configuration Performance(3)....................... 43 12. ADDITIONAL INFORMATION......................................................................................................... 44 Block Erase Suspend and Resume Command .............................................................................. 44 Recommended Operating Conditions............................................................................................. 44 13. ORDERING INFORMATION........................................................................................................... 46 14. PACKAGE DIMENSION.................................................................................................................. 46 15. VERSION HISTORY ....................................................................................................................... 47 -2- W28J160B/T 1. GENERAL DESCRIPTION The W28J160B/T Flash memory chip is a high-density, cost-effective, nonvolatile, read/write storage device suited for a wide range of applications. It operates of VDD = 2.7V to 3.6V, with VPP of 2.7V to 3.6V or 11.7V to 12.3V. This low voltage operation capability enbales use in low power applications. The IC features a boot, parameter and main-blocked architecture, as well as low voltage and extended cycling. These features provide a highly flexible device suitable for portable terminals and personal computers. Additionally, the enhanced suspend capabilities provide an ideal solution for both code and data storage applications. For secure code storage applications, such as networking where code is either directly executed out of flash or downloaded to DRAM, the device offers four levels of protection. These are: absolute protection, enabled when VPP VPPLK; selective hardware blocking; flexible software blocking; or write protection. These alternatives give designers comprehensive control over their code security needs. The device is manufactured using 0.25 m process technology. It comes in industry-standard packaging, a 48-lead TSOP, which makes it ideal for small real estate applications. 2. FEATURES * Low Voltage Operation * Enhanced Automated Suspend Options - VDD = VPP = 2.7V to 3.6V Single Voltage * User-Configurable x 8 or x 16 Operation * High-Performance Read Access Time - Word/Byte Write Suspend to Read - Block Erase Suspend to Word/Byte Write - Block Erase Suspend to Read * Enhanced Data Protection Features - 90 nS (VDD = 2.7V to 3.6V) * Operating Temperature - Complete Protection with VPP VPPLK - Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration Lockout during Power Transitions - Block Locking with Command and #WP - Permanent Locking * Automated Block Erase, Full Chip Erase, Low - 0 C to +70 C (W28J160BT/TT90C) - -40 C to +85 C (W28J160BT/TT90L) * Low Power Management - 2 A (VDD = 3.0V) Typical Standby Current - Automatic Power Savings Mode Decreases ICCR in Static Mode - 120 A (VDD = 3.0V, TA =+25 C, f=32kHz)Typical Read Current * Optimized Array Blocking Architecture Power Management Word/Byte Write and Lock-Bit Configuration - Command User Interface (CUI) - Status Register (SR) * SRAM-Compatible Write Interface * Industry-Standard Packaging - Two 4k-word (8k-byte) Boot Blocks - Six 4k-word (8k-byte) Parameter Blocks - Thirty-one 32k-word (64k-byte) Main Blocks - Top or Bottom Boot Location * Extended Cycling Capability - 48-Lead TSOP * Nonvolatile Flash Technology * CMOS Process (P-type silicon substrate) * Not designed or rated as radiation hardened - Minimum of 100,000 Block Erase Cycles -3- Publication Release Date: April 7, 2003 Revision A4 W28J160B/T 3. PRODUCT OVERVIEW The W28J160B/T is a high-performance 16M-bit Boot Block Flash memory IC organized as 1M-word x 16 bits or 2M-byte x 8 bits. The 1M-word/2M-byte of data is arranged in two 4k-word/8k-byte boot blocks, six 4k-word/ 8k-byte parameter blocks and thirty-one 32k-word/64k-byte main blocks. Each block is individually erasable, lockable and unlockable in-system. The memory map is shown in Figure 3. The dedicated VPP pin gives complete data protection when VPP VPPLK. A Command User Interface (CUI) serves as the interface between the system processor and internal operation of the device. A valid command sequence, which has been written to the CUI, initiates device automation. An internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for block erase, full chip erase, word/byte write and lock-bit configuration operations. A block erase operation erases one of the device's 32k-word/64k-byte blocks typically within 1.2s (3V VDD, 3V VPP) or 4k-word/8k-byte blocks typically within 0.6s (3V VDD, 3V VPP) independent of other blocks. Each block can be independently erased a minimum of 100,000 times. Block erase suspend mode allows system software to suspend block erase in order to read or write data from any other block. Writing memory data is performed in word/byte increments of the device's 32k-word blocks, typically within 33 S (3V VDD, 3V VPP), 64k-byte blocks typically within 31s (3V VDD, 3V VPP), 4k-word blocks typically within 36 S (3V VDD, 3V VPP), 8kbyte blocks typically within 32 S (3V VDD, 3V VPP). Word/byte write suspend mode enables the system to read data or execute code from any other flash memory array location. To lock and unlock blocks, individual block locking uses a combination of bits, 39 block lock-bits, a permanent lock-bit and #WP pin. The block lock-bits gate block erase, full chip erase and word/byte write operations, while the permanent lock-bit gates block lock-bit modification and locked block alternation. Lock-bit configuration operations (Set Block Lock-Bit, Set Permanent Lock-Bit and Clear Block Lock-Bits commands) set and cleared lock-bits. The status register indicates when the WSM's block erase, full chip erase, word/byte write or lock-bit configuration operation is finished. The RY/#BY output gives an additional indicator of WSM activity by providing both a hardware signal of status (versus software polling) and status masking (interrupt masking for background block erase, as an example). Status polling, using RY/#BY, minimizes both CPU overhead and system power consumption. When low, RY/#BY indicates that the WSM is performing a block erase, full chip erase, word/byte write or lock-bit configuration. RY/#BY-high Z indicates that the WSM is ready for a new command, block erase is suspended (and word/byte write is inactive), word/byte write is suspended, or the device is in reset mode. The access time is 90nS (tAVQV) over the operating temperature range and VDD supply voltage range of 2.7V to 3.6V. The Automatic Power Savings (APS) feature substantially reduces active current when the device is in static mode (addresses not switching). In APS mode, the typical ICCR current is 2 A (CMOS) at 3.0V VDD. When #CE and #RESET pins are at VDD, the ICC CMOS standby mode is enabled. When the #RESET pin is at VSS, reset mode is enabled which minimizes power consumption and provides write protection. A reset time (tPHQV) is required from #RESET switching high until outputs are valid. -4- W28J160B/T Likewise, the device has a wake time (tPHEL) from #RESET-high until writes to the CUI are recognized. With #RESET at VSS, the WSM is reset and the status register is cleared. Overwriting a "0" to a bit already holding a data "0" may render this bit un-erasable. In order to avoid this potential "stuck bit" failure, when re-programming (changing data from "1" to "0") the following should be followed: * * Program "0" for the bit in which you want to change data from "1" to "0". Program "1" for the bit which is already holding a data "0". (Note: Since only an erase process can change the data from "0" to "1", programming "1" to a bit holding a data "0" will not change the data). For example, changing data from "10111101" to "10111100" requires "11111110" programming. 4. BLOCK DIAGRAM DQ0 -DQ15 Output Buffer Input Buffer I/O Logic Identifier Register Output Multiplexer Status Register Data Register Command User Interface VDD #BYTE #CE #WE #OE #RESET #WP Data Comparator Parameter Block 0 Parameter Block 1 Parameter Block 2 Parameter Block 3 Parameter Block 4 Parameter Block 5 Boot Block 0 Boot Block 1 A1-A19 Main Block 29 Main Block 30 Main Block 0 Main Block 1 Input Buffer Y Decoder Y-Gating Write State Machine RY/#BY Program/Erase Voltage Switch VPP Address Latch X Decoder 32K-Word (64K-Byte) Main Blocks x 31 VDD VSS Address Counter Figure 1. Block Diagram -5- Publication Release Date: April 7, 2003 Revision A4 W28J160B/T Block Organization This device features an asymmetrically-blocked architecture that enables system integration of code and data in a single chip. Each block can be erased independently of the others up to 100,000 times. For the address locations of the blocks, refer to the memory map in Figure 3. Boot Blocks: The boot block is intended to replace a dedicated boot PROM in a microprocessor or microcontroller-based system. The boot block size is 4k words, and it features hardware controllable write protection to protect the crucial microprocessor boot code from accidental modification. The protection of the boot block is controlled using a combination of the VPP, #RESET, #WP pins and block lock-bit. Parameter Blocks: The boot block architecture includes parameter blocks to facilitate storage of frequently updated small parameters that would normally require an EEPROM. By using software techniques, the word-rewrite functionality of EEPROMs can be emulated. Each boot block component contains six parameter blocks of 4k words each. The protection of the parameter block is controlled using a combination of the VPP, #RESET and block lock-bit. Main Blocks: The remainder of the memory is divided into main blocks for data or code storage. Each 16M-bit device contains thirty-one 32k word blocks. The protection of the main block is controlled using a combination of the VPP, #RESET and block lock-bit. 5. PIN CONFIGURATION A15 A14 A13 A12 A11 A10 A9 A8 A19 NC #WE #RESET V PP #WP RY/#BY A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 7 46 45 44 43 42 41 48-pin TSOP Standard Pinout 12mm X 20mm Top View 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 #BYTE Vss DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDD DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 #OE Vss #CE A0 Figure 2. TSOP 48-Lead Pinout -6- W28J160B/T 6. PIN DESCRIPTION SYMBOL A-1 A0 - A19 TYPE INPUT NAME AND FUNCTION ADDRESS INPUTS: Inputs for addresses during read and write operations. Addresses are internally latched during a write cycle. A-1: Lower address input while #BYTE is VIL. A-1 pin changes DQ15 pin while #BYTE is VIH. A15 - A19: Main Block Address. A12 - A19: Boot and Parameter Block Address. DATA INPUT/OUTPUTS: Inputs data and commands during CUI write cycles; outputs data during memory array, status register and identifier code read cycles. Data pins float to highimpedance when the chip is deselected or outputs are disabled. Data is internally latched during a pin write cycle. DQ8-DQ15 pins are not used while byte mode (#BYTE= VIL). Then, DQ15 changes A-1address input. CHIP ENABLE: Activates the device's control logic, input buffers, decoders and sense amplifiers. #CE-high deselects the device and reduces power consumption to standby levels. RESET: Resets the device internal automation. #RESET-high enables normal operation. When driven low, #RESET inhibits write operations which provides data protection during power transitions. Exiting from reset mode sets the device to read array mode. #RESET must be VIL during power-up. OUTPUT ENABLE: Gates the device's outputs during a read cycle. WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data are latched on the rising edge of the #WE pulse. WRITE PROTECT: When #WP is VIL, boot blocks cannot be written or erased. When #WP is VIH, locked boot blocks can not be written or erased. #WP is not affected parameter and main blocks. BYTE ENABLE: #BYTE VIL places the device in byte mode (x 8), all data is then input or output on DQ0-7, and DQ8-15 float. #BYTE VIH places the device in word mode (x 16), and turns off the A-1 input buffer. READY/BUSY#: Indicates the status of the internal WSM. When low, the WSM is performing an internal operation (block erase, full chip erase, word/byte write or lock-bit configuration). RY/#BY-high Z indicates that the WSM is ready for new commands, block erase is suspended, and word/byte write is inactive, word/byte write is suspended, or the device is in reset mode. BLOCK ERASE, FULL CHIP ERASE, WORD/BYTE WRITE OR LOCK-BIT CONFIGURATION POWER SUPPLY: For erasing array blocks, writing words/bytes or configuring lock-bits. With VPP VPPLK, memory contents cannot be altered. Block erase, full chip erase, word/byte write and lock-bit configuration with an invalid VPP (see DC Characteristics) produce spurious results and should not be attempted. Applying 12V 0.3V to VPP during erase/write can only be done for a maximum of 1000 cycles on each block. VPP may be connected to 12V 0.3V for a total of 80 hours maximum. DEVICE POWER SUPPLY: Do not float any power pins. With VDD VLKO, all write attempts to the flash memory are inhibited. Device operations at invalid VDD voltage (see DC Characteristics) produce spurious results and should not be attempted. GROUND: Do not float any ground pins. NO CONNECT: Lead is not internal connected; it may be driven or floated. DQ0 - DQ15 INPUT/ OUTPUT #CE INPUT #RESET #OE #WE #WP INPUT INPUT INPUT INPUT #BYTE INPUT RY/#BY OPEN DRAIN OUTPUT VPP SUPPLY VDD VSS NC SUPPLY SUPPLY Table 1 -7- Publication Release Date: April 7, 2003 Revision A4 W28J160B/T 7. PRINCIPLES OF OPERATION The W28J160B/T flash memory includes an on-chip WSM to manage block erase, full chip erase, word/byte write and lock-bit configuration functions. It allows for 100 percent TTL-level control inputs, fixed power supplies during block erase, full chip erase, word/byte write and lock-bit configuration, and minimal processor overhead with RAM-like interface timings. After the initial device power-up or return from reset mode (refer to the Bus Operations subsection), the device defaults to read array mode. Manipulating the external memory control pins allows for array read, standby and output disable operations. Status register and identifier codes can be accessed through the CUI independent of the VPP voltage. High voltage on VPP enables successful block erase, full chip erase, word/byte write and lock-bit configurations. All functions associated with altering memory contents (block erase, full chip erase, word/byte write, lock-bit configuration, status and identifier codes) are accessed via the CUI and verified through the status register. Commands are written using standard microprocessor write timings. The CUI contents serve as input to the WSM, which controls the block erase, full chip erase, word/byte write and lock-bit configuration. The internal algorithms are regulated by the WSM, including pulse repetition, internal verification and margining of data. Addresses and data are internally latched during write cycles. Writing the appropriate command outputs array data, accesses the identifier codes, or outputs status register data. Interface software that initiates and polls the progress of block erase, full chip erase, word/byte write and lock-bit configuration can be stored in any block. During flash memory updates, this code is copied to, and executed from, system RAM. After successful completion, reads are again possible via the Read Array command. Block erase suspend allows system software to suspend a block erase to read/write data from/to blocks other than that which is suspend. Word/byte write suspend allows system software to suspend a word/byte write to read data from any other flash memory array location. Data Protection When VPP VPPLK, memory contents cannot be altered. The CUI, with two-step block erase, full chip erase, word/byte write or lock-bit configuration command sequences, provides protection from unwanted operations even when high voltage is applied to VPP. All write functions are disabled when VDD is below the write lockout voltage VLKO or when #RESET is at VIL. The device's block locking capability provides additional protection from inadvertent code or data alteration by gating block erase, full chip erase and word/byte write operations. Reference Table 5 for write protection alternatives. -8- W28J160B/T [A19-A0] FFFFF FF000 FEFFF FE000 FDFFF FD000 FCFFF FC000 FBFFF FB000 FAFFF FA000 F9FFF F9000 F8FFF F8000 F7FFF F0000 EFFFF E8000 E7FFF E0000 DFFFF D8000 D7FFF D0000 CFFFF C8000 C7FFF C0000 BFFFF B8000 B7FFF B0000 AFFFF A8000 A7FFF A0000 9FFFF 98000 97FFF 90000 8FFFF 88000 87FFF 80000 7FFFF 78000 77FFF 70000 6FFFF 68000 67FFF 60000 5FFFF 58000 57FFF 50000 4FFFF 48000 47FFF 40000 3FFFF 38000 37FFF 30000 2FFFF 28000 27FFF 20000 1FFFF 18000 17FFF 10000 0FFFF 08000 07FFF 00000 Top Boot 4KW/8KB Boot Block 0 4KW/8KB Boot Block 1 4KW/8KB Parameter Block 0 4KW/8KB Parameter Block 1 4KW/8KB Parameter Block 2 4KW/8KB Parameter Block 3 4KW/8KB Parameter Block 4 4KW/8KB Parameter Block 5 32KW/64KB Main Block 0 32KW/64KB Main Block 1 32KW/64KB Main Block 2 32KW/64KB Main Block 3 32KW/64KB Main Block 4 32KW/64KB Main Block 5 32KW/64KB Main Block 6 32KW/64KB Main Block 7 32KW/64KB Main Block 8 32KW/64KB Main Block 9 32KW/64KB Main Block 10 32KW/64KB Main Block 11 32KW/64KB Main Block 12 32KW/64KB Main Block 13 32KW/64KB Main Block 14 32KW/64KB Main Block 15 32KW/64KB Main Block 16 32KW/64KB Main Block 17 32KW/64KB Main Block 18 32KW/64KB Main Block 19 32KW/64KB Main Block 20 32KW/64KB Main Block 21 32KW/64KB Main Block 22 32KW/64KB Main Block 23 32KW/64KB Main Block 24 32KW/64KB Main Block 25 32KW/64KB Main Block 26 32KW/64KB Main Block 27 32KW/64KB Main Block 28 32KW/64KB Main Block 29 32KW/64KB Main Block 30 [A19-A1] 1FFFFF 1FE000 1FDFFF 1FC000 1FBFFF 1FA000 1F9FFF 1F8000 1F7FFF 1F6000 1F5FFF 1F4000 1F3FFF 1F2000 1F1FFF 1F0000 1EFFFF 1E0000 1DFFFF 1D0000 1CFFFF 1C0000 1BFFFF 1B0000 1AFFFF 1A0000 19FFFF 190000 18FFFF 180000 17FFFF 170000 16FFFF 160000 15FFFF 150000 14FFFF 140000 13FFFF 130000 12FFFF 120000 11FFFF 110000 10FFFF 100000 0FFFFF 0F0000 0EFFFF 0E0000 0DEFFF 0D0000 0CFFFF 0C0000 0BFFFF 0B0000 0AFFFF 0A0000 09FFFF 090000 08FFFF 080000 07FFFF 070000 06FFFF 060000 05FFFF 050000 04FFFF 040000 03FFFF 030000 02FFFF 020000 01FFFF 010000 00FFFF 000000 [A19-A0] FFFFF F8000 F7FFF F0000 EFFFF E8000 E7FFF E0000 DFFFF D8000 D7FFF D0000 CFFFF C8000 C7FFF C0000 BFFFF B8000 B7FFF B0000 AFFFF A8000 A7FFF A0000 9FFFF 98000 97FFF 90000 8FFFF 88000 87FFF 80000 7FFFF 78000 77FFF 70000 6FFFF 68000 67FFF 60000 5FFFF 58000 57FFF 50000 4FFFF 48000 47FFF 40000 3FFFF 38000 37FFF 30000 2FFFF 28000 27FFF 20000 1FFFF 18000 17FFF 10000 0FFFF 08000 07FFF 07000 06FFF 06000 05FFF 05000 04FFF 04000 03FFF 03000 02FFF 02000 01FFF 01000 00FFF 00000 Bottom Boot 32KW/64KB Main Block 30 32KW/64KB Main Block 29 32KW/64KB Main Block 28 32KW/64KB Main Block 27 32KW/64KB Main Block 26 32KW/64KB Main Block 25 32KW/64KB Main Block 24 32KW/64KB Main Block 23 32KW/64KB Main Block 22 32KW/64KB Main Block 21 32KW/64KB Main Block 20 32KW/64KB Main Block 19 32KW/64KB Main Block 18 32KW/64KB Main Block 17 32KW/64KB Main Block 16 32KW/64KB Main Block 15 32KW/64KB Main Block 14 32KW/64KB Main Block 13 32KW/64KB Main Block 12 32KW/64KB Main Block 11 32KW/64KB Main Block 10 32KW/64KB Main Block 9 32KW/64KB Main Block 8 32KW/64KB Main Block 7 32KW/64KB Main Block 6 32KW/64KB Main Block 5 32KW/64KB Main Block 4 32KW/64KB Main Block 3 32KW/64KB Main Block 2 32KW/64KB Main Block 1 32KW/64KB Main Block 0 4KW/8KB Parameter Block 5 4KW/8KB Parameter Block 4 4KW/8KB Parameter Block 3 4KW/8KB Parameter Block 2 4KW/8KB Parameter Block 1 4KW/8KB Parameter Block 0 4KW/8KB Boot Block 1 4KW/8KB Boot Block 0 [A19-A1] 1FFFFF 1F0000 1EFFFF 1E0000 1DFFFF 1D0000 1CFFFF 1C0000 1BFFFF 1B0000 1AFFFF 1A0000 19FFFF 190000 18FFFF 180000 17FFFF 170000 16FFFF 160000 15FFFF 150000 14FFFF 140000 13FFFF 130000 12FFFF 120000 11FFFF 110000 10FFFF 100000 0FFFFF 0F0000 0EFFFF 0E0000 0DFFFF 0D0000 0CFFFF 0C0000 0BFFFF 0B0000 0AFFFF 0A0000 09FFFF 090000 08FFFF 080000 07FFFF 070000 06FFFF 060000 05FFFF 050000 04FFFF 040000 03FFFF 030000 02FFFF 020000 01FFFF 010000 00FFFF 00E000 00DFFF 00C000 00BFFF 00A000 009FFF 008000 007000 006000 005FFF 004000 003FFF 002000 001FFF 000000 Figure 3. Memory Map -9- Publication Release Date: April 7, 2003 Revision A4 W28J160B/T 8. BUS OPERATION The local CPU reads and writes flash memory in-system. All bus cycles to or from the flash memory conform to standard microprocessor bus cycles. Read Information can be read from any block, identifier codes or status register independent of the VPP voltage. #RESET can be at VIH. The first task is to write the appropriate read mode command (Read Array, Read Identifier Codes or Read Status Register) to the CUI. Upon initial device power-up, or after exit from reset mode, the device automatically resets to read array mode. Six control pins dictate the data flow in and out of the component: #CE, #OE, #BYTE, #WE, #RESET and #WP. #CE and #OE must be driven active to obtain data at the outputs. #CE is the device selection control, and when active enables the selected memory device. #OE is the data output (DQ0 - DQ15) control and when active drives the selected memory data onto the I/O bus. #BYTE is the device I/O interface mode control. #WE must be at VIH, #RESET must be at VIH, and #BYTE and #WP must be at VIL or VIH. Figures 14 and 15 illustrates read cycle. Output Disable With #OE at a logic-high level (VIH), the device outputs are disabled. Output pins (DQ0 - DQ15) are placed in a high-impedance state. Standby Setting #CE to a logic-high level (VIH) deselects the device and places it in standby mode, which substantially reduces device power consumption. DQ0 - DQ15 outputs are placed in a high impedance state independent of #OE. If deselected during block erase, full chip erase, word/byte write or lock-bit configuration, the device continues functioning, and it continues to consume active power until the operation is completed. Reset Setting #RESET to VIL initiates the reset mode. In read modes, setting #RESET at VIL deselects the memory, places output drivers in a highimpedance state and turns off all internal circuits. #RESET must be held low for a minimum of 100 nS. A delay (tPHQV) is required after return from reset until initial memory access outputs are valid. After this wake-up interval, normal operation is restored. The CUI is reset to read array mode status register is set to 80H, and all blocks are locked. During block erase, full chip erase, word/byte write or lock-bit configuration modes, #RESET at VIL will abort the operation. RY/#BY remains low until the reset operation is complete. Memory contents at the aborted location are no longer valid since the data may be partially erased or written. A delay (tPHWL) is required after #RESET goes to logic-high (VIH) before another command can be written. As with any automated device, it is important to assert #RESET during system reset. When the system comes out of reset, it expects to read from the flash memory. Automated flash memories provide status information when accessed during block erase, full chip erase, word/byte write or lockbit configuration modes. If a CPU reset occurs with no flash memory reset, proper CPU initialization may not occur because the flash memory may be providing status information instead of array data. - 10 - W28J160B/T Winbond's flash memory solutions allow proper CPU initialization following a system reset through the use of the #RESET input. In this application, #RESET is controlled by the same #RESET signal that resets the system CPU. Read Identifier Codes The read identifier codes operation outputs the manufacturer code, device code, block lock configuration codes for each block and the permanent lock configuration code (see Figure 4). Using the manufacturer and device codes, the system CPU can automatically match the device with its proper algorithms. The block lock and permanent lock configuration codes identify locked and unlocked blocks and permanent lock-bit setting. Write Writing commands to the CUI enable reading of device data and identifier codes. They also control inspection and clearing of the status register. When VDD = 2.7V to 3.6V and VPP = VPPH1/2, the CUI additionally controls block erase, full chip erase, word/byte write and lock-bit configuration. The Block Erase command requires appropriate command data and an address within the block to be erased. The Full Chip Erase command requires appropriate command data and an address within the device. The Word/Byte Write command requires the command and address of the location to be written. Set Permanent and Block Lock-Bit commands require the command and address within the device (Permanent Lock) or block within the device (Block Lock) to be locked. The Clear Block LockBits command requires the command and address within the device. The CUI does not occupy an addressable memory location. A write occurs when #WE and #CE are active (low). The address and data needed to execute a command are latched on the rising edge of #WE or #CE, whichever occurs first. Standard microprocessor write timings are used. Figures 16 and 17 illustrate the #WE and #CE controlled write operations. - 11 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T [A19-A0] FFFFF FF003 FF002 FF001 FF000 FEFFF FE003 FE002 FE001 FE000 FDFFF FD003 FD002 FD001 FD000 FCFFF F9000 F8FFF F8003 F8002 F8001 F8000 F7FFF F0003 F0002 F0001 F0000 EFFFF 08000 07FFF 00004 00003 00002 00001 00000 Top Boot Reserved for Future Implementation Boot Block 0 Lock Configuration Code Reserved for Future Implementation Boot Block0 Reserved for Future Implementation Boot Block 1 Lock Configuration Code Reserved for Future Implementation Boot Block1 Reserved for Future Implementation Parameter Block 0 Lock Configuration Code Reserved for Future Implementation Parameter Block0 (Parameter Blocks 1 through 4) Reserved for Future Implementation Parameter Block 5 Lock Configuration Code Reserved for Future Implementation Parameter Block5 Reserved for Future Implementation Main Block 0 Lock Configuration Code Reserved for Future Implementation Mani Block0 (Main Blocks 1 through 29) Reserved for Future Implementation Permanent Lock Configuration Code Main Block 30 Lock Configuration Code Device Code Manufacturer Code Mani Block 30 [A19-A0] FFFFF F8003 F8002 F8001 F8000 F7FFF 10000 0FFFF 08003 08002 08001 08000 07FFF 07003 07002 07001 07000 06FFF 03000 02FFF 02003 02002 02001 02000 01FFF Bottom Boot Reserved for Future Implementation Main Block 30 Lock Configuration Code Reserved for Future Implementation Main Block30 (Main Blocks 1 through 29) Reserved for Future Implementation Main Block 0 Lock Configuration Code Reserved for Future Implementation Mani Block0 Reserved for Future Implementation Parameter Block 5 Lock Configuration Code Reserved for Future Implementation Parameter Block5 (Parameter Blocks 1 through 4) Reserved for Future Implementation Parameter Block 0 Lock Configuration Code Reserved for Future Implementation Parameter Block0 Reserved for Future Implementation 01003 01002 01001 01000 00FFF 00004 00003 00002 00001 00000 Boot Block 1 Lock Configuration Code Reserved for Future Implementation Boot Block1 Reserved for Future Implementation Permanent Lock Configuration Code Boot Block 0 Lock Configuration Code Device Code Manufacturer Code Boot Block 0 * Address A-1 don't care. Figure 4. Device Identifier Code Memory Map - 12 - W28J160B/T 9. COMMAND DEFINITIONS When VPP VPPLK, read operations from the status register, identifier codes, or blocks are enabled. Setting VPPH1/2 = VPP enables successful block erase, full chip erase, word/byte write and lock-bit configuration operations. Device operations are selected by writing specific commands into the CUI. Table 3 defines these commands. Table 2.1. Bus Operations (#BYTE = VIH) (note 1, 2) Mode Read (note 8) Output Disable Standby Reset (note 4) Read Identifier Codes (note 8) Write (note 6,7,8) #RESET VIH VIH VIH VIL VIH VIH #CE VIL VIL VIH X VIL VIL #OE VIL VIH X X VIL VIH #WE VIH VIH X X VIH VIL Address X X X X See Figure 4 X VPP X X X X X X DQ0 - 15 RY/#BY(3) DOUT High Z High Z High Z Note 5 DIN X X X High Z High Z X Table 2.2. Bus Operations (#BYTE = VIL) (note 1, 2) Mode Read (note 8) Output Disable Standby Reset (note 4) Read Identifier Codes (note 8) Write (note 6,7,8) Notes: 1. Refer to DC Characteristics. When VPP VPPLK, memory contents can be read, but not altered. 2. X can be VIL or VIH for control pins and addresses, and VPPLK or VPPH1/2 for VPP. See DC Characteristics for VPPLK voltages. 3. RY/#BY is VOL when the WSM is executing internal block erase, full chip erase, word/byte write or lock-bit configuration algorithms. It is High Z during when the WSM is not busy, in block erase suspend mode (with word/byte write inactive), word/byte write suspend mode or reset mode. 4. #RESET at VSS 0.2V ensures the lowest power consumption. 5. See Read Identifier Codes Command section for details. 6. Command writes involving block erase, full chip erase, word/byte write or lock-bit configuration are reliably executed when VPP = VPPH1/2 and VDD = 2.7V to 3.6V. 7. Refer to Table 3 for valid DIN during a write operation. 8. Never hold #OE low and #WE low at the same timing. #RESET VIH VIH VIH VIL VIH VIH #CE VIL VIL VIH X VIL VIL #OE VIL VIH X X VIL VIH #WE VIH VIH X X VIH VIL Address X X X X See Figure 4 X VPP X X X X X X DQ0 - 15 RY/#BY(3) DOUT High Z High Z High Z Note 5 DIN X X X High Z High Z X - 13 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T Table 3. Command Definitions(10) COMMAND Read Array/Reset Read Identifier Codes Read Status Register Clear Status Register Block Erase Full Chip Erase Word/Byte Write Block Erase and Word/Byte Write Suspend Block Erase and Word/Byte Write Resume Set Block Lock-Bit Clear Block Lock-Bits Set Permanent Lock-Bit Notes: 1. BUS operations are defined in Table 2.1 and Table 2.2. 2. X = Any valid address within the device. IA = Identifier Code Address: see Figure 4. BA = Address within the block being erased. WA = Address of memory location to be written. 3. SRD = Data read from status register. See Table 6 for a description of the status register bits. WD = Data to be written at location WA. Data is latched on the rising edge of #WE or #CE (whichever goes high first). ID = Data read from identifier codes. 4. Following the Read Identifier Codes command, read operations access manufacturer, device, block lock configuration and permanent lock configuration codes. See Read Identifier Codes Command section for details. 5. If #WP is VIL, boot blocks are locked without block lock-bits state. If #WP is VIH, boot blocks are locked by block lockbits. The parameter and main blocks are locked by block lock-bits without #WP state. 6. Either 40H or 10H are recognized by the WSM as the word/byte write setup. 7. The clear block lock-bits operation simultaneously clears all block lock-bits. 8. If the permanent lock-bit is set, Set Block Lock-Bit and Clear Block Lock-Bits commands can not be done. 9. Once the permanent lock-bit is set, permanent lock-bit reset is unable. 10. Commands other than those shown above are reserved by Winbond for future device implementations and should not be used. BUS CYCLES REQ'D. 1 2 (note 4) 2 1 2 (note 5) 2 2 (note5, 6) 1 (note 5) 1 (note 5) 2 (note 8) 2 (note 7, 8) 2 (note 9) FIRST BUS CYCLE Oper(1) Write Write Write Write Write Write Write Write Write Write Write Write Addr(2) X X X X X X X X X X X X Data(3) FFH 90H 70H 50H 20H 30H 40H or 10H B0H D0H 60H 60H 60H SECOND BUS CYCLE Oper(1) Addr(2) Data(3) Read Read Write Write Write IA X BA X WA ID SRD D0H D0H WD Write Write Write BA X X 01H D0H F1H Read Array Command Subsequent to initial device power-up and after exiting the reset mode, the device defaults to read array mode. This operation is also initiated by writing the Read Array command. The device remains enabled for reads until another command is written. Once the internal WSM has started a block erase, full chip erase, word/byte write or lock-bit configuration the device will not recognize the Read Array command until the WSM completes its operation unless the WSM is suspended via an Erase - 14 - W28J160B/T Suspend or Word/Byte Write Suspend command. The Read Array command functions independently of the VPP voltage and #RESET can be VIH. Read Identifier Codes Command The identifier code operation is initiated by writing the Read Identifier Codes command. Following the command write, read cycles from addresses, shown in Figure 4, retrieve the manufacturer, device, block lock configuration and permanent lock configuration codes (see Table 4 for identifier code values). To terminate this operation, write another valid command. Like the Read Array command, the Read Identifier Codes command functions independently of the VPP voltage and #RESET can be VIH. Following the Read Identifier Codes command, the following information can be read: Table 4. Identifier Codes CODE Manufacture Code Device Code Top Boot Bottom Boot ADDRESS(2) [A19 - A0] 00000H 00001H DATA(3) [DQ7 - DQ0] B0H E8H E9H DQ0 = 0 DQ0 = 1 DQ1 - 7 DQ0 = 0 DQ0 = 1 DQ1 - 7 Block Lock Configuration * Block is Unlocked * Block is Locked * Reserved for Future Use Permanent Lock Configuration * Device is Unlocked * Device is Locked ed * Reserved for Future Use Notes: 1. BA selects the specific block lock configuration code to be read. See Figure 4 for the device identifier code memory map. 2. A-1 don't care in byte mode. 3. DQ15-DQ8 outputs 00H in word mode. BA(1)+2 00003H Read Status Register Command The status register may be read to determine when a block erase, full chip erase, word/byte write or lock-bit configuration is complete and whether an operation was successfully completed. It may be read at any time by writing the Read Status Register command. After writing this command, all subsequent read operations output data from the status register until another valid command is written. The status register contents are latched on the falling edge of #OE or #CE, whichever occurs last. #OE or #CE must toggle to VIH before further reads to update the status register latch. The Read Status Register command functions independently of the VPP voltage. #RESET can be VIH. - 15 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T Clear Status Register Command Status register bits SR.5, SR.4, SR.3 or SR.1 are set to "1"s by the WSM and can only be reset by the Clear Status Register command. These bits indicate various failure conditions (refer to Table 6). By allowing system software to reset these bits, several operations (such as cumulatively erasing multiple blocks or writing several words/bytes in sequence) may be performed. The status register may be polled to determine if an error occurred during the sequence. To clear the status register, the Clear Status Register command (50H) is written. It functions independently of the applied VPP voltage. #RESET can be VIH. This command is not functional during block erase or word/byte write suspend modes. Block Erase Command Erase is executed, one block at a time, and initiated by a two-cycle command. A block erase setup is first written, followed by a block erase confirm. This command sequence requires appropriate sequencing and an address within the block to be erased (erase changes all block data to FFFFH/FFH). Block preconditioning, erase, and verify are all handled internally by the WSM (invisible to the system). After the two-cycle block erase sequence is written, the device automatically outputs the status register data when read (refer to Figure 5). The CPU can detect block erase completion by analyzing the output data of the RY/#BY pin or status register bit SR.7. When the block erase function is complete, the status register bit SR.5 should be checked. If a block erase error is detected, the status register should be cleared before system software attempts corrective actions. The CUI remains in read status register mode until a new command is issued. This two-step command sequence for set-up, followed by execution, ensures that block contents are not accidentally erased. An invalid Block Erase command sequence will result in both status register bits SR.4 and SR.5 being set to "1". Additionally, reliable block erasure can only occur when VDD = 2.7V to 3.6V and VPP = VPPH1/2. In the absence of this high voltage, block contents are protected against erasure. If block erase is attempted while VPP VPPLK, SR.3 and SR.5 will be set to "1". Successful block erase for boot blocks requires that #WP = VIH and the corresponding block lock-bit be cleared. In parameter and main blocks cases, it must be cleared via the corresponding block lock-bit. If block erase is attempted when the excepting above conditions, SR.1 and SR.5 will be set to "1". Full Chip Erase Command This command followed by a confirm command erases all of the unlocked blocks. A full chip erase setup (30H) is first written, followed by a full chip erase confirm (D0H). After a confirm command is written, the device erases the all unlocked blocks, block-by-block. This command sequence requires appropriate sequencing. Block preconditioning, erase and verify are handled internally by the WSM (invisible to the system). After the two-cycle full chip erase sequence is written, the device automatically outputs status register data when can be read (refer to Figure 6). The CPU can detect full chip erase completion by analyzing the output data of the RY/#BY pin or status register bit SR.7. When full chip erase is completed, status register bit SR.5 should be checked. If erase error is detected, the status register should be cleared before system software attempts corrective actions. The CUI remains in read status register mode until a new command is issued. If an error is detected on a block during full chip erase operation, WSM stops erasing. Full chip erase operation starts from the lower address block and finishes the higher address block. Full chip erase cannot be suspended. - 16 - W28J160B/T This two-step command sequence of set-up followed by execution ensures that block contents are not accidentally erased. An invalid Full Chip Erase command sequence will result in both status register bits SR.4 and SR.5 being set to "1". Also, reliable full chip erasure can only occur when VDD = 2.7V to 3.6V and VPP = VPPH1/2. In the absence of this high voltage, block contents are protected against erasure. If full chip erase is attempted while VPP VPPLK, SR.3 and SR.5 will be set to "1". Successful full chip erase requires for boot blocks that #WP = VIH and that the corresponding block lock-bit be cleared. In parameter and main blocks case, it must clear the corresponding block lock-bit. If all blocks are locked, SR.1 and SR.5 will be set to "1". Word/Byte Write Command Word/Byte write is executed by a two-cycle command sequence. Word/Byte write setup (standard 40H or alternate 10H) is written, followed by a second write that specifies the address and data (latched on the rising edge of #WE). The WSM then takes over, controlling the word/byte write and write verify algorithms internally. After the word/byte write sequence is written, the device automatically outputs status register data when read (see Figure 7). The CPU can detect the completion of the word/byte write event by analyzing the RY/#BY pin or status register bit SR.7. When word/byte write is complete, status register bit SR.4 should be checked. If a word/byte write error is detected, the status register should be cleared. The internal WSM verify only detects errors for "1"s that do not successfully write to "0"s. The CUI remains in read status register mode until it receives another command. Reliable word/byte writes can only occur when VDD = 2.7V to 3.6V and VPP = VPPH1/2. In the absence of this high voltage, memory contents are protected against word/byte writes. If word/byte write is attempted while VPP VPPLK, status register bits SR.3 and SR.4 will be set to "1". Successful word/byte write for boot blocks requires that #WP = VIH and the corresponding block lock-bit be cleared. In parameter and main blocks case, the corresponding block lock-bit must be cleared. If word/byte write is attempted under these conditions, SR.1 and SR.4 will be set to "1". Block Erase Suspend Command The Block Erase Suspend command allows block-erase interruption to read or word/byte write data in another block of memory. Once the block erase process starts, writing the Block Erase Suspend command requests that the WSM suspend the block erase sequence at a predetermined point in the algorithm. The device outputs status register data that must be read after the Block Erase Suspend command is written. Polling status register bits SR.7 and SR.6 can determine when the block erase operation has been suspended (both will be set to "1"). RY/#BY will also transition to High Z. The period tWHRZ2 defines the block erase suspend latency. When Block Erase Suspend command writes to the CUI, if block erase is finished, the device is placed in read array mode. Therefore, after Block Erase Suspend command writes to the CUI, Read Status Register command (70H) has to write to CUI, and then status register bit SR.6 should be checked to confirm that the device is in suspend mode. At this point, a Read Array command can be written to read data from blocks other than that which is suspended. To program data in other blocks, a Word/Byte Write command sequence can also be issued during erase suspend. Using the Word/Byte Write Suspend command (reference the Word/Byte Write Suspend Command subsection), a word/byte write operation can also be suspended. During a word/byte write operation with block erase suspended, status register bit SR.7 will return to "0" and the RY/#BY output will transition to VOL. However, SR.6 will remain "1" to indicate block erase suspend status. Publication Release Date: April 7, 2003 Revision A4 - 17 - W28J160B/T The only other valid commands while block erase is suspended are Read Status Register and Block Erase Resume. After a Block Erase Resume command is written to the flash memory, the WSM will continue the block erase process. Status register bits SR.6 and SR.7 will automatically clear and RY/#BY will return to VOL. After the Erase Resume command is written, the device automatically outputs status register data when read (refer to Figure 8). VPP must remain at VPPH1/2 (the same VPP level used for block erase) while block erase is suspended. #RESET must also remain at VIH. #WP must also remain at VIL or VIH (the same #WP level used for block erase). Block erase cannot resume until word/byte write operations initiated during block erase suspend have completed. If the time from Block Erase Resume command write to the CUI till Block Erase Suspend command write to the CUI is short, it can be repeated. In addition, erase time be prolonged. Word/Byte Write Suspend Command The Word/Byte Write Suspend command allows word/byte write interruption to read data in other flash memory locations. Once the word/byte write process starts, sending the Word/Byte Write Suspend command causes the WSM to suspend the Word/Byte write sequence at a predetermined point in the algorithm. The device continues to output status register data when read after the Word/Byte Write Suspend command is written. Polling status register bits SR.7 and SR.2 can determine when the word/byte write operation has been suspended (both will be set to "1"). RY/#BY will also transition to High Z. The period tWHRZ1 defines the word/byte write suspend latency parameters. When Word/Byte Write Suspend command writes to the CUI, the device is placed in read array mode if word/byte write is finished. Therefore, after Word/Byte Write Suspend command writes to the CUI, the Read Status Register command (70H) has to write to CUI, then status register bit SR.2 should be checked to confirm the device is in suspend mode. At this point, a Read Array command can be written to read data from locations other than that which is suspended. The only other valid commands while word/byte write is suspended are Read Status Register and Word/Byte Write Resume. After Word/Byte Write Resume command is written to the flash memory, the WSM will continue the word/byte write process. Status register bits SR.2 and SR.7 will automatically clear and RY/#BY will return to VOL. After the Word/Byte Write Resume command is written, the device automatically outputs status register data when read (reference Figure 9). VPP must remain at VPPH1/2 (the same VPP level used for word/byte write) while in word/byte write suspend mode. #RESET must also remain at VIH. #WP must also remain at VIH or VOL (the same #WP level used for word/byte write). If the period from Word/Byte Write Resume command write to Word/Byte Write Suspend command write is too short, it can be repeated, and the write time will be prolonged. Set Block and Permanent Lock-Bit Commands A flexible block locking and unlocking scheme is enabled via a combination of block lock-bits, a permanent lock-bit and #WP pin. The block lock-bits and #WP pin gates program and erase operations while the permanent lock-bit gates block-lock bit modification. With the permanent lock-bit not set, individual block lock-bits can be set via the Set Block Lock-Bit command. The Set Permanent Lock-Bit command sets the permanent lock-bit. After the permanent lock-bit is set, block lock-bits and locked block contents cannot be altered. Refer to Table 5 for a summary of hardware and software write protection options. Set block lock-bit and permanent lock-bit are executed via a two-cycle command sequence. The set block or permanent lock-bit setup, along with appropriate block or device address, is written followed by either the set block lock-bit confirm (and an address within the block to be locked) or the set permanent lock-bit confirm (and any device address). The WSM then executes the set lock-bit - 18 - W28J160B/T algorithm. After the sequence is written, the device automatically outputs status register data when read (reference Figure 10). The CPU can detect the completion of the set lock-bit event by analyzing the RY/#BY pin output or status register bit SR.7. When the set lock-bit operation is complete, status register bit SR.4 should be checked. If an error is detected, the status register should be cleared. The CUI will remain in read status register mode until a new command is issued. This two-step sequence of set-up, followed by execution, ensures that lock-bits are not accidentally set. An invalid Set Block or Permanent Lock-Bit command will result in status register bits SR.4 and SR.5 being set to "1". Also, reliable operations occur only when VDD = 2.7V to 3.6V and VPP = VPPH1/2. In the absence of this high voltage, lock-bit contents are protected against alteration. A successful set block lock-bit operation requires that the permanent lock-bit be cleared. If it is attempted with the permanent lock-bit set, SR.1 and SR.4 will be set to "1" and the operation will fail. Clear Block Lock-Bits Command All set block lock-bits are cleared in parallel via the Clear Block Lock-Bits command. If the permanent lock-bit is not set, block lock-bits can be cleared using only the Clear Block Lock-Bits command. If the permanent lock-bit is set, block lock-bits cannot be cleared. Refer to Table 5 for a summary of hardware and software write protection options. Clear block lock-bits operation is executed by a two-cycle command sequence. A clear block lock-bits setup is first written. After the command is written, the device automatically outputs status register data when read (refer to Figure 11). The CPU can detect completion of the clear block lock-bits event by reading the RY/#BY Pin output or status register bit SR.7. When the operation is complete, status register bit SR.5 should be checked. If a clear block lock-bit error is detected, the status register should be cleared. The CUI will remain in read status register mode until another command is issued. This two-step sequence of set-up followed by execution ensures that block lock-bits are not accidentally cleared. An invalid Clear Block Lock-Bits command sequence will result in status register bits SR.4 and SR.5 being set to "1". Also, a reliable clear block lock-bits operation can only occur when VDD = 2.7V to 3.6V and VPP = VPPH1/2. If a clear block lock-bits operation is attempted while VPP VPPLK, SR.3 and SR.5 will be set to "1". In the absence of this high voltage, the block lock-bits content are protected against alteration. A successful clear block lock-bits operation requires that the permanent lock-bit is not set. If it is attempted with the permanent lock-bit set, SR.1 and SR.5 will be set to "1" and the operation will fail. If a clear block lock-bits operation is aborted due to VPP or VDD transitioning out of valid range or #RESET is toggled, block lock-bit values are left in an undetermined state. A repeat of clear block lock-bits is required to initialize block lock-bit contents to known values. Once the permanent lock-bit is set, it cannot be cleared. Block Locking by the #WP This Boot Block Flash memory architecture features two hardware-lockable boot blocks so that the kernel code for the system can be kept secure while other blocks are programmed or erased as necessary. - 19 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T The lockable two boot blocks are locked when #WP = VIL; any program or erase operation to a locked block will result in an error, which will be reflected in the status register. For top configuration, the top two boot blocks are lockable. For the bottom configuration, the bottom two boot blocks are lockable. If #WP is VIH and block lock-bit is not set, boot block can be programmed or erased normally (unless VPP is below VPPLK). The #WP is valid only for two boot blocks, other blocks are not affected. Table 5. Write Protection Alternatives OPERATION VPP VPPLK #RESET X VIL Block Erase or Word/Byte Write Permanent Lock-Bit X X Block Lock-bit X X 0 > VPPLK VIH X 1 VIH VPPLK X VIL Full Chip Erase > VPPLK X X X X X X VIL VIH X X VIH VPPLK Set Block Lock-Bit > VPPLK VPPLK Clear Block Lock-Bits > VPPLK VPPLK > VPPLK X VIL VIH X VIL VIH X VIL VIH X X 0 1 X X 0 1 X X X X X X X X X X X X X X X X X X X X X X X X X #WP X X VIL VIH VIL EFFECT All Blocks Locked. All Blocks Locked. 2 Boot Blocks Locked. Block Erase and Word/Byte Write Enabled. Block Erase and Word/Byte Write Disabled. Block Erase and Word/Byte Write Disabled. All Blocks Locked. All Blocks Locked. All Unlocked Blocks are Erased. 2 Boot Blocks and Locked Blocks are NOT Erased. All Unlocked Blocks are Erased. Locked Blocks are NOT Erased. Set Block Lock-Bit Disabled. Set Block Lock-Bit Disabled. Set Block Lock-Bit Enabled. Set Block Lock-Bit Disabled. Clear Block Lock-Bits Disabled. Clear Block Lock-Bits Disabled. Clear Block Lock-Bits Enabled. Clear Block Lock-Bits Disabled. Set Permanent Lock-Bit Disabled. Set Permanent Lock-Bit Disabled. Set Permanent Lock-Bit Enabled. Set Permanent Lock-Bit - 20 - W28J160B/T Table 6. Status Register Definition WSMS 7 BESS 6 ECBLBS 5 WBWSLBS 4 VPPS 3 WBWSS 2 NOTES: SR.7 = WRITE STATE MACHINE STATUS (WSMS) 1 = Ready 0 = Busy SR.6 = BLOCK ERASE SUSPEND STATUS (BESS) 1 = Block Erase Suspended 0 = Block Erase in Progress/Completed SR.5 = ERASE AND CLEAR BLOCK LOCK-BITS STATUS (ECBLBS) 1 = Error in Block Erase, Full Chip Erase or Clear Block Lock-Bits 0 = Successful Block Erase, Full Chip Erase or Clear Block Lock-Bits SR.4 = WORD/BYTE WRITE AND SET LOCK-BIT STATUS (WBWSLBS) 1 = Error in Word/Byte Write or Set Block/Permanent LockBit 0 = Successful Word/Byte Write or Set Block/Permanent Lock-Bit SR.3 = VPP STATUS (VPPS) 1 = VPP Low Detect, Operation Abort 0 = VPP OK SR.2 = WORD/BYTE WRITE SUSPEND STATUS (WBWSS) 1 = Word/Byte Write Suspended 0 = Word/Byte Write in Progress/Completed SR.1 = DEVICE PROTECT STATUS (DPS) 1 = Block Lock-Bit, Permanent Lock-Bit and/or #WP Lock Detected, Operation Abort 0 = Unlock SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R) If both SR.5 and SR.4 are "1"s after a block erase, full chip erase or lock-bit configuration attempt, an improper command sequence was entered. Check RY/#BY or SR.7 to determine block erase, full chip erase, word/byte write or lock-bit configuration completion. SR.6-0 are invalid while SR.7="0". DPS 1 R 0 SR.3 does not provide a continuous indication of VPP level. The WSM interrogates and indicates the VPP level only after Block Erase, Full Chip Erase, Word/Byte Write or Lock-Bit Configuration command sequences. SR.3 is not guaranteed to reports accurate feedback only when VPP VPPH1/2. SR.1 does not provide a continuous indication of permanent and block lock-bit and #WP values. The WSM interrogates the permanent lock-bit, block lock-bit and #WP only after Block Erase, Full Chip Erase, Word/Byte Write or Lock-Bit Configuration command sequences. It informs the system, depending on the attempted operation, if the block lock-bit is set, permanent lock-bit is set and/or #WP is VIL. Reading the block lock and permanent lock configuration codes after writing the Read Identifier Codes command indicates permanent and block lock-bit status. SR.0 is reserved for future use and should be masked out when polling the status register. - 21 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T Start Bus Operation Write 70H Command Read Status Register Comments Data = 70H Addr = X Status Register Data Check SR.7 1 = WSM Ready 0 = WSM Busy Write Read Standby Read Status Register SR.7= 0 1 Write 20H Write Write Read Standby No Suspend Block Erase Loop Yes Erase Setup Erase Confirm Data = 20H Addr = X Data = D0H Addr = Within Block to be Erased Status Register Data Check SR.7 1 = WSM Ready 0 = WSM Busy Write D0H, Block Address Read Status Register Suspend Block Erase SR.7= 1 Full Status Check if Desired Block Erase Complete 0 Repeat for subsequent block erasures. Full status check can be done after each block erase or after a sequence of block erasures. Write FFH after the last operation to place device in read array mode. Full STATUS CHECK PROCEDURE Read Status Register Data(See Above) 1 Bus Operation Standby Command SR.3= 0 SR.1= 0 SR.4,5= 0 SR.5= 0 Vpp Range Error Standby Comments Check SR.3 1 = VPP Error Detect Check SR.1 1 = Device Protect Detect Check SR.4, 5 Both 1=Command Sequence Error Check SR.5 1 = Block Erase Error 1 Device Protect Error Standby 1 Command Sequence Error Standby 1 Block Erase Error Block Erase Sucessfully SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register Command in cases where multiple blocks are erased before full status is checked. If error is detected, clear the Status Register before attempting retry or other error recovery. Figure 5. Automated Block Erase Flowchart - 22 - W28J160B/T Start Bus Operation Write Command Read Status Register Comments Data = 70H Addr = X Status Register Data Check SR.7 1 = WSM Ready 0 = WSM Busy Write 70H Read Read Status Register Standby 0 SR.7= 1 Write 30H Write Full Chip Erase Setup Full Chip Erase Confirm Data = 30H Addr = X Data = D0H Addr = X Status Register Data Check SR.7 1 = WSM Ready 0 = WSM Busy Write Write D0H Read Read Status Register Standby 0 SR.7= 1 Full Status Check if Desired Full Chip Erase Complete Full status check can be done after each full chip erase. Write FFH after the last operation to place device in read array mode. Full STATUS CHECK PROCEDURE Read Status Register Data(See Above) 1 0 SR.1= 0 SR.4,5= 0 SR.5= 0 Full Chip Erase Successfully 1 Full Chip Erase Error 1 Command Sequence Error 1 Device Protect Error Bus Operation Standby Vpp Range Error Command SR.3= Standby Comments Check SR.3 1 = VPP Error Detect Check SR.1 1 = Device Protect Detect (All Blocks are locked) Check SR.4, 5 Both 1 = Command Sequence Error Check SR.5 1 = Full Chip Erase Error Standby Standby SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register Command in cases where multiple blocks are erased before full status is checked. If error is detected, clear the Status Register before attempting retry or other error recovery. Figure 6. Automated Full Chip Erase Flowchart - 23 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T Start Bus Operation Write Command Read Status Register Comments Data = 70H Addr = X Status Register Data Check SR.7 1 = WSM Ready 0 = WSM Busy Write 70H Read Standby 0 Read Status Register SR.7= 1 Write 40H or 10H Write Setup Word/Byte Write Word/Byte Write Data = 40H or 10H Addr = X Data = Data to Be Written Addr = Location to Be written Status Register Data Check SR.7 1 = WSM Ready 0 = WSM Busy Write Write Word/Byte Data and Adddress Read Status Register No SR.7= 1 Full Status Check if Desired Word/Byte Write Complete 0 Suspend Word/Byte Write Read Standby Suspend Word/Byte Write Loop Yes Repeat for subsequent word/byte writes. SR full status check can be done after each word/byte write, or after a sequence of word/byte writes. Write FFH after the last word/byte write operation to place device in read array mode. Full STATUS CHECK PROCEDURE Read Status Register Data(See Above) 1 Bus Operation Standby Command SR.3= 0 SR.1= 0 SR.4= 0 Word/Byte Write Successfully Vpp Range Error Standby Comments Check SR.3 1 = VPP Error Detect Check SR.1 1 = Device Protect Detect Check SR.4 1 = Data Write Error 1 Device Protect Error Standby 1 Word/Byte Write Error SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple locations are written before full status is checked. If error is detected, clear the Status Register before attempting retry or other error recovery. Figure 7. Automated Word/Byte Write Flowchart - 24 - W28J160B/T Start Write B0H Bus Operation Command Write Erase Suspend Comments Data = B0H Addr = X Status Register Data Addr = X Check SR.7 1 = WSM Ready 0 = WSM Busy Check SR.6 1 = Block Erase Suspended 0 = Block Erase Completed Read Status Register Read SR.7 = 1 SR.6 = 1 Read Read Array Data Read or Word/Byte Write? 0 Standby 0 Block Erase Complete Word/Byte write Wore/Byte Write Loop Standby Write Erase Resume Data = D0H Addr = X No Done? Yes Write D0H Write FFH Block Erase Resumed Read Array Data Figure 8. Block Erase Suspend/Resume Flowchart - 25 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T Start Bus Operation Write Command Word/Byte Write Suspend Comments Data = B0H Addr = X Status Register Data Addr = X Check SR.7 1 = WSM Ready 0 = WSM Busy Check SR.2 1 = Word/Byte Write Suspended 0 = Word/Byte Write Completed Write B0H Read Status Register 0 Read SR.7= 1 SR.2= 1 Write FFH Standby 0 Word/Byte Write Completed Standby Write Read Array Data Read Array Data = FFH Addr = X Read Array locations other than that being written. Read No Done Reading Yes Write D0H Write Write FFH Word/Byte Write Resume Data = D0H Addr = X Word/Byte Write Resumed Read Array Data Figure 9. Word/Byte Write Suspend/Resume Flowchart - 26 - W28J160B/T Start Bus Operation Write Command Read Status Register Write 70H Read Standby Set Block/Permanent Lock-Bit Setup Set Block or Permanent Lock-Bit Confirm Comments Data = 70H Addr = X Status Register Data Check SR.7 1 = WSM Ready 0 = WSM Busy Data = 60H Addr = X Data = 01H (Block), F1H (Permanent) Addr = Block Address(Block), Device Address(Permanent) Status Register Data Check SR.7 1 = WSM Ready 0 = WSM Busy Read Status Register SR.7= 0 Write 1 Write 60H Write Write 01H/F1H Block/Device Address Read Status Register Read Standby SR.7= 1 Full Status Check if Desired Set Lock-Bit Complete 0 Repeat for subsequent lock-bit set operations. Full status check can be done after each lock-bit set operation or after a sequence of lock-bit set operations. Write FFH after the last lock-bit set operation to place device in read array mode. Full STATUS CHECK PROCEDURE Read Status Register Data(See Above) 1 Bus Operation Standby Command SR.3= 0 SR.1= 0 SR.4,5= 0 SR.4= 0 Set Lock-Bit Successfully Vpp Range Error Standby 1 Device Protect Error Standby Comments Check SR.3 1 = VPP Error Detect Check SR.1 1 = Device Protect Detect Permanent Lock-Bit is Set (Set Block Lock-Bit Operation) Check SR.4, 5 Both 1 = Command Sequence Error Check SR.4 1 = Set Lock-Bit Error 1 Command Sequence Error Standby 1 Set Lock-Bit Error SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple lock-bits are set before full status is checked. If error is detected, clear the Status Register before attempting retry or other error recovery. Figure 10. Set Block and Permanent Lock-Bit Flowchart - 27 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T Start Bus Operation Write Command Read Status Register Comments Data = 70H Addr = X Status Register Data Check SR.7 1 = WSM Ready 0 = WSM Busy Write 70H Read Standby Read Status Register SR.7= 0 Write Clear Block Lock-Bits Setup Clear Block Write Lock-Bits Confirm Data = 60H Addr = X Data = D0H Addr = X Status Register Data Check SR.7 1 = WSM Ready 0 = WSM Busy 1 Write 60H Write D0H Read Standby Read Status Register SR.7= 1 Full Status Check if Desired Clear Block Lock-Bits Complete 0 Write FFH after the Clear Block Lock-Bits operation to place device in read array mode. Full STATUS CHECK PROCEDURE Read Status Register Data(See Above) 1 Bus Operation Standby Command Comments Check SR.3 1 = VPP Error Detect Check SR.1 1 = Device Protect Detect Permanent Lock-Bit is Set Check SR.4, 5 SR.3= 0 SR.1= 0 SR.4,5= 0 SR.5= 0 Clear Block Lock-Bits Successfully Vpp Range Error Standby 1 Device Protect Error Standby Both 1=Command Sequence Error Check SR.5 1 = Clear Block Lock-Bits Error 1 Command Sequence Error Standby 1 Clear Block Lock-Bits Error SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command. If error is detected, clear the Status Register before attempting retry or other error recovery. Figure 11. Clear Block Lock-Bits Flowchart - 28 - W28J160B/T 10. DESIGN CONSIDERATIONS Three-line Output Control This device will often be used in large memory arrays. Winbond provides three control inputs to accommodate multiple memory connections. Three-line control provides for: a. Lowest possible memory power dissipation. b. Complete assurance that data bus contention will not occur. To use these control inputs efficiently, an address decoder should enable #CE while #OE should be connected to all memory devices and the system's #READ control line. This assures that only selected memory devices have active outputs while deselected memory devices are in standby mode. #RESET should be connected to the system POWERGOOD signal to prevent unintended writes during system power transitions. POWERGOOD should also toggle during system reset. RY/#BY and WSM Polling RY/#BY is an open drain output that should be connected to VDD by a pull up resistor to provide a hardware method of detecting block erase, full chip erase, word/byte write and lock-bit configuration completion. It transitions low after block erase, full chip erase, word/byte write or lock-bit configuration commands and returns to VOH (while RY/#BY is pull up) when the WSM has finished executing the internal algorithm. RY/#BY can be connected to an interrupt input of the system CPU or controller. It is active at all times. RY/#BY is also high impedance when the device is in block erase suspend (with word/byte write inactive), word/byte write suspend or reset modes. Power Supply Decoupling Flash memory power switching characteristics require careful device decoupling. System designers are interested in three supply current issues; standby current levels, active current levels and transient peaks produced by falling and rising edges of #CE and #OE. Transient current magnitudes depend on the device outputs' capacitive and inductive loading. Two-line control and proper decoupling capacitor selection will suppress transient voltage peaks. Each device should have a 0.1 F ceramic capacitor connected between VDD and VSS and between VPP and VSS. These high frequency, low inductance capacitors should be placed as close as possible to package leads. Additionally, for every eight devices, a 4.7 F electrolytic capacitor should be placed at the array's power supply connection between VDD and VSS. The bulk capacitor will overcome voltage drops caused by PC board trace inductance. VPP Trace on Printed Circuit Boards Updating flash memories that reside in the target system requires that the printed circuit board designer pay attention to the VPP power supply trace. The VPP pin supplies the memory cell current for word/byte writing and block erasing. Similar trace widths and layout considerations should be given to the VDD power bus. Adequate VPP supply traces and decoupling will decrease VPP voltage spikes and overshoots. VDD, VPP, #RESET Transitions Block erase, full chip erase, word/byte write and lock-bit configuration are not guaranteed if VPP falls outside of a valid VPPH1/2 range, VDD falls outside of a valid 2.7V to 3.6V range, or #RESET VIH. If a Publication Release Date: April 7, 2003 Revision A4 - 29 - W28J160B/T VPP error is detected, status register bit SR.3 is set to "1", along with SR.4 or SR.5, depending upon the attempted operation. If #RESET transitions to VIL during block erase, full chip erase, word/byte write or lock-bit configuration, RY/#BY will remain low until the reset operation is complete. Then, the operation will abort and the device will enter reset mode. The aborted operation may result in the data being partially altered. Therefore, the command sequence must be repeated after normal operation is restored. Device power-off or #RESET transitions to VIL clear the status register. The CUI latches commands issued by system software and is not altered by VPP or #CE transitions or WSM actions. Its state is read array mode upon power-up, after exit from reset mode or after VDD transitions below VLKO. Power-up/Down Protection The device is designed to offer protection against accidental block erase, full chip erase, word/byte write or lock-bit configuration during power transitions. Upon power-up, the device is indifferent as to which power supply (VPP or VDD) powers-up first. Internal circuitry resets the CUI to read array mode at power-up. A system designer must guard against spurious writes for VDD voltages above VLKO when VPP is active. Since both #WE and #CE must be low for a command write, driving either to VIH will inhibit writes. The CUI's two-step command sequence architecture features an added level of protection against data alteration. In-system block lock and unlock capability prevents inadvertent data alteration. The device is disabled while #RESET = VIL regardless of its control inputs state. Power Dissipation When designing portable systems, designers must consider battery power consumption not only during device operation, but also for data retention during system idle time. Flash memory's nonvolatility increases usable battery life because data is retained when system power is removed. Data Protection Method On some systems, noise having a level exceeding the limit dictated in the specification may be generated under specific operating conditions. Such noise, when induced onto #WE signal or power supply, may be interpreted as false commands, causing undesired memory updating. To protect the data stored in the flash memory against undesired overwriting, systems operating with the flash memory should have the following write protect designs, as appropriate: 1) Protecting data in specific block When a lock bit is set, the corresponding block (includes the 2 boot blocks) is protected against overwriting. By setting a #WP low, only the 2 boot blocks can be protected against overwriting. By using this feature, the flash memory space can be divided into the program section (locked section) and data section (unlocked section). The permanent lock bit can be used to prevent false block bit setting. For further information on setting/resetting lock-bit, refer to the specification. 2) Data protection through VPP When the level of VPP is lower than VPPLK (lockout voltage), write operation on the flash memory is disabled. All blocks are locked and the data in the blocks are completely write protected. For the lockout voltage, refer to the specification. - 30 - W28J160B/T 3) Data protection through #RESET When the #RESET is kept low during read mode, the flash memory will be in reset mode, write protecting all blocks. When the #RESET is kept low during power up and power down sequences such as voltage transition, write operation on the flash memory is disabled, write protecting all blocks. For the details of #RESET control, refer to the specification. 11. ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings* Operating Temperature During Read, Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration ........................................................................................ -40 C to +85 C (1) ...................................................................................................................................... 0 C to +70 C (1) Storage Temperature During under Bias .............................. .............................................................................. -10 C to +80 C During non Bias .............................. ............................................................................. .. -65 C to +125 C Voltage On Any Pin (except VDD and VPP)......... .................................................................................... .. -0.5V to VDD +0.5V(2) VDD Supply Voltage......................... ........................................................................... ....... -0.2V to +4.6V(2) VPP Supply Voltage................................................................................................... .... -0.2V to +13.0V(2,3) Output Short Circuit Current............. ........................................................................... ...................100 mA(4) *WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability. Notes: 1. -40 C to +85 C operating temperature is for extended temperature product defined by this specification. (for 28J160BT/TT90L) 0 C to +70 C operating temperature is for commercial temperature product defined by this specification. (for W28J160BT/TT90C) 2. All specified voltages are with respect to VSS. Minimum DC voltage is -0.5V on input/output pins and -0.2V on VDD and VPP pins. During transitions, this level may undershoot to -2.0V for periods <20 nS. Maximum DC voltage on input/output pins are VDD +0.5V which, during transitions, may overshoot to VDD +2.0V for periods <20 nS. 3. Maximum DC voltage on VPP may overshoot to +13.0V for periods <20 nS. Applying 12V 0.3V to VPP during erase/write can only be done for a maximum of 1000 cycles on each block. VPP may be connected to 12V 0.3V for a total of 80 hours maximum. 4. Output shorted for no more than one second. No more than one output shorted at a time. Operating Conditions Temperature and VDD Operating Conditions SYMBOL TA PARAMETER Operating Temperature W28J160BT/TT90C W28J160BT/TT90L MIN. 0 -40 2.7 MAX. +70 +85 3.6 UNIT C V TEST CONDITION Ambient Temperature VDD VDD Supply Voltage (2.7V to 3.6V) - 31 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T Capacitance(1) TA = +25 C, f = 1 MHz PARAMETER Input Capacitance Output Capacitance Note: Sampled, not 100% tested. SYMBOL CIN COUT TYP. 7 9 MAX. 10 12 UNIT pF pF CONDITION VIN = 0.0V VOUT = 0.0V AC Input/Output Test Conditions 2.7 INPUT 0.0 1.35 TEST POINTS 1.35 OUTPUT AC test inputs are driven at 2.7V for a Logic "1" and 0.0V for a Logic "0". Input timing begins, and output timing ends, at 1.35V. Input rise and fall times (10% to 90%) <10 nS. Figure 12. Transient Input/Output Reference Waveform for VDD = 2.7V to 3.6V +1.3V (IN914) R L =3.3K ohm DEVICE UNDER TEST C L Includes Jig Capacitance CL OUT Figure 13. Transient Equivalent Testing Load Circuit Test Configuration Capacitance Loading Value Test Configuration VDD = 2.7V to 3.6V CL(pF) 50 - 32 - W28J160B/T DC Characteristics PARAMETER Input Load Current (note 1) Output Leakage Current (note 1) SYM. ILI ILO TEST CONDITIONS VDD = VDD Max. VIN = VDD or VSS VDD = VDD Max. VOUT = VDD or VSS CMOS Level Inputs VDD = VDD Max. #CE = #RESET = VDD 0.2V TTL Level Inputs VDD = VDD Max. #CE = #RESET = VIH CMOS Level Inputs VDD = VDD Max. #CE = VSS 0.2V #RESET= VSS 0.2V IOUT (RY/#BY) = 0 mA CMOS Level Inputs VDD = VDD Max., #CE = VSS, f = 5 MHz, IOUT = 0 mA TTL Level Inputs VDD = VDD Max., #CE = VSS, f = 5 MHz, IOUT = 0 mA VPP = 2.7V - 3.6V VPP = 11.7V - 12.3V VPP = 2.7V - 3.6V VPP = 11.7V - 12.3V #CE = VIH VPP VDD VPP > VDD CMOS Level Inputs VDD = VDD Max. #CE = VSS 0.2V #RESET = VSS 0.2V VPP = 2.7V - 3.6V VPP = 11.7V - 12.3V VPP = 2.7V - 3.6V VPP = 11.7V - 12.3V VPP =VPPH1/2 10 8 5 5 4 4 1 2 10 0.1 0.1 12 2 0.2 2 2 15 VDD = 2.7V - 3.6V Typ. Max. 0.5 0.5 15 2 15 15 25 30 17 12 17 12 6 15 200 5 5 40 30 25 20 200 UNIT A A A mA A A mA mA mA mA mA mA mA A A A A mA mA mA mA A VDD Standby Current (note 1, 3, 6) VDD Auto Power-Save Current (note 1, 5, 6) VDD Reset Power-Down Current (note 1) ICCS ICCAS ICCD VDD Read Current (note 1, 6) ICCR VDD Word/Byte Write or Set LockBit Current (note 1, 7) VDD Block Erase, Full Chip Erase or Clear Block Lock-Bits Current (note 1, 7) VDD Word/Byte Write or Block Erase Suspend Current (note 1, 2) ICCW ICCE ICCWS ICCES VPP Standby or Read Current (note ICCWS 1) ICCWR VPP Auto Power-Save Current (note 1, 5, 6) VPP Reset Power-Down Current (note 1) VPP Word/Byte Write or Set LockBit Current (note 1, 7) VPP Block Erase, Full Chip Erase or Clear Block Lock-Bits Current (note 1, 7) VPP Word/Byte Write or Block Erase Suspend Current (note 1) ICCWAS ICCWD ICCWW ICCWE ICCWWS ICCWES - 33 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T DC Characteristics (Continued) PARAMETER Input Low Voltage (note 7) Input High Voltage (note 7) Output Low Voltage (note 3, 7) Output High Voltage (TTL) (note 7) Output High Voltage (CMOS) (note 7) VPP Lockout during Normal Operations (note 4, 7) VPP during Block Erase, Full Chip Erase, Word/Byte Write or Lock-Bit Configuration Operations VPP during Block Erase, Full Chip Erase, Word/Byte Write or Lock-Bit Configuration Operations (note 8) VDD Lockout Voltage Notes: SYM. VIL VIH VOL VOH1 VOH2 VPPLK VPPH1 TEST CONDITIONS VDD = 2.7V - 3.6V Min. Max. UNIT V V V V V V -0.5 2.0 VDD = VDD Min. IOL = 2.0 mA VDD = VDD Min. IOH = -2.0 mA VDD = VDD Min. IOH = -2.5 mA VDD = VDD Min. IOH = -100 A 0.8 VDD +0.5 0.4 2.4 0.85 VDD VDD -0.4 1.0 2.7 11.7 2.0 3.6 12.3 V V VPPH2 VLKO V V 1. All currents are in RMS unless otherwise noted. Typical values at nominal VDD voltage and TA = +25C. 2. ICCWS and ICCES are specified with the device de-selected. If read or word/byte written while in erase suspend mode, the device's current draw is the sum of ICCWS or ICCES and ICCR or ICCW , respectively. 3. Includes RY/#BY. 4. Block erases, full chip erase, word/byte writes and lock-bit configurations are inhibited when VPP VPPLK, and not guaranteed in the range between VPPLK (max.) and VPPH1 (min.), between VPPH1 (max.) and VPPH2 (min.) and above VPPH2 (max.). 5. The Automatic Power Savings (APS) feature is placed automatically power save mode that addresses not switching more than 300ns while read mode. 6. About all of pin except describe Test Conditions, CMOS level inputs are either VDD 0.2V or VSS 0.2V, TTL level inputs are either VIL or VIH. 7. Sampled, not 100% tested. 8. Applying 12V 0.3V to VPP during erase/write can only be done for a maximum of 1000 cycles on each block. VPP may be connected to 12V 0.3V for a total of 80 hours maximum. - 34 - W28J160B/T AC Characteristics - Read-only Operations(1) VDD = 2.7V to 3.6V, TA = 0C to +70C for W28J160BT/TT90C; TA = -40C to +85C for W28J160BT/TT90L PARAMETER Read Cycle Time Address to Output Delay #CE to Output Delay (note 2) #RESET High to Output Delay #OE to Output Delay (note 2) #CE to Output in Low Z (note 3) #CE High to Output in High Z (note 3) #OE to Output in Low Z (note 3) #OE High to Output in High Z (note 3) Output Hold from Address, #CE or #OE Change, Whichever Occurs First (note 3) #BYTE to Output Delay (note3) #BYTE Low to Output in High Z (note 3) #CE to #BYTE High or Low (note 3, 4) Notes: SYM. tAVAV tAVQV tELQV tPHQV tGLQV tELQX tEHQZ tGLQX tGHQZ tOH tFVQV tFLQZ tELFV TA = 0 to +70 C TA = -40 to +85 C Min. 90 90 90 600 40 0 40 0 15 0 90 25 5 0 90 30 5 0 20 0 55 Max. Min. 90 90 90 600 50 Max. UNIT nS nS nS nS nS nS nS nS nS nS nS nS nS 1. See AC Input/Output Reference Waveform for maximum allowable input slew rate. 2. #OE may be delayed up to tELQV to tGLQV after the falling edge of #CE without impact on tELQV. 3. Sampled, not 100% tested. 4. If #BYTE transfer during reading cycle, exist the regulations separately. - 35 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T Address(A) #CE(E) VIH VIL VIH VIL VIH VIL VIH VIL Standby Device Address Selection Address Stable Data Valid t AVAV t EHQZ #OE(G) tGHQZ #WE(W) t GLQV t ELQV tELQX tGLQX tOH DATA(D/Q) V OH (DQ0-DQ15) VOL V DD V IH V IL HIGH Z t AVQV Valid Output HIGH Z t PHQV #RESET(P) Figure 14. AC Waveform for Read Operations - 36 - W28J160B/T Address(A) #CE(E) VIH VIL VIH VIL VIH Standby Device Address Selection Address Stable Data Valid t AVAV t ELQV t AVQV t GLQV t FVQV t EHQZ #OE(G) V IL #BYTE(F) VIH VIL HIGH Z tGHQZ tOH t ELFV tGLQX DATA(D/Q) VOH (DQ0-DQ7) V OL DATA(D/Q) V OH (DQ0-DQ7) V OL HIGH Z Data Output Valid Output tELQX t FLQZ HIGH Z Data Output HIGH Z Figure 15. #BYTE Timing Waveform - 37 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T AC Characteristics - Write Operations(1) VDD = 2.7V to 3.6V, TA = 0C to +70C for W28J160BT/TT90C; TA = -40C to +85C for W28J160BT/TT90L PARAMETER Write Cycle Time #RESET High Recovery to #WE Going Low (note 2) #CE Setup to #WE Going Low #WE Pulse Width #WPVIH Setup to #WE Going High (note 2) VPP Setup to #WE Going High (note 2) Address Setup to #WE Going High (note 3) Data Setup to #WE Going High (note 3) Data Hold from #WE High Address Hold from #WE High #CE Hold from #WE High #WE Pulse Width High #WE High to RY/#BY Going Low or SR.7 Going "0" Write Recovery before Read VPP Hold from Valid SRD, RY/#BY High Z (note 2, 4) #WP VIH Hold from Valid SRD, RY/#BY High Z (note 2, 4) #BYTE Setup to #WE Going High (note 5) #BYTE Hold from #WE High (note 5) Notes: SYM. tAVAV tPHWL tELWL tWLWH tSHWH tVPWH tAVWH tDVWH tWHDX tWHAX tWHEH tWHWL tWHRL tWHGL tQVVL tQVSL tFVWH tWHFV MIN. 90 1 10 50 100 100 50 50 0 0 10 30 MAX. UNIT nS S nS nS nS nS nS nS nS nS nS nS 100 0 0 0 50 90 nS nS nS nS nS nS 1. Read timing characteristics during block erase, full chip erase, word/byte write and lock-bit configuration operations are the same as during read-only operations. Refer to AC Characteristics for read-only operations. 2. Sampled, not 100% tested. 3. Refer to Table 4 for valid AIN and DIN for block erase, full chip erase, word/byte write or lock-bit configuration. 4. VPP should be held at VPPH1/2 until determination of block erase, full chip erase, word/byte write or lock-bit configuration success (SR.1/3/4/5 = 0). 5. If #BYTE switch during reading cycle, exist the regulations separately. - 38 - W28J160B/T 1 Address(A) VIH VIL 2 A IN t AVAV 3 A IN t AVWH 4 5 6 VIH #CE(E) VIL VIH #OE(G) VIL #WE(W) VIH VIL VIH VIL VIH VIL High Z RY/#BY(R) ("1") ("0") t WHAX tELWL tWHEH t WHGL t WHWL t WHQV1,2,3,4 DATA(D/Q) HIGH Z t PHWL t WLWH t DVWH t WHDX DIN t FVWH DIN t WHFV Valid SRD DIN #BYTE(F) t WHRL t VOL VIH VIL t SHWH t QVSL #WP(S) #RESET(P) VIH VIL t VPWH t QVVL VPPH1/2 VPP (V) VPPLK VIL Figure 16. AC Waveform for #WE-Controlled Write Operations Notes: 1. VDD power-up and standby. 2. Write each setup command. 3. Write each confirm command or valid address and data. 4. Automated erase or program delay. 5. Read status register data. 6. Write Read Array command. - 39 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T Alternative #CE-Controlled Writes(1) VDD = 2.7V to 3.6V, TA = 0C to +70C for W28J160BT/TT90C; TA = -40C to +85C for W28J160BT/TT90L PARAMETER Write Cycle Time #RESET High Recovery to #CE Going Low (note 2) #WE Setup to #CE Going Low #CE Pulse Width #WPVIH Setup to #CE Going High (note 2) VPP Setup to #CE Going High (note 2) Address Setup to #CE Going High (note 3) Data Setup to #CE Going High (note 3) Data Hold from #CE High Address Hold from #CE High #WE Hold from #CE High #CE Pulse Width High #CE High to RY/#BY Going Low or SR.7 Going "0" Write Recovery before Read VPP Hold from Valid SRD, RY/#BY High Z (note 2, 4) #WP VIH Hold from Valid SRD, RY/#BY High Z (note 2, 4) #BYTE Setup to #CE Going High (note 5) #BYTE Hold from #CE High (note 5) Notes: SYM. tAVAV tPHEL tWLEL tELEH tSHEH tVPEH tAVEH tDVEH tEHDX tEHAX tEHWH tEHEL tEHRL tEHGL tQVVL tQVSL tFVEH tEHFV MIN. 90 1 0 65 100 100 50 50 0 0 0 25 MAX. UNIT nS S nS nS nS nS nS nS nS nS nS nS 100 0 0 0 50 90 nS nS nS nS nS nS 1. In systems where #CE defines the write pulse width (within a longer #WE timing waveform), all setup, hold, and inactive #WE times should be measured relative to the #CE waveform. 2. Sampled, not 100% tested. 3. Refer to Table 4 for valid AIN and DIN for block erase, full chip erase, word/byte write or lock-bit configuration. 4. VPP should be held at VPPH1/2 until determination of block erase, full chip erase, word/byte write or lock-bit configuration success (SR.1/3/4/5 = 0). 5. If #BYTE switch during reading cycle, exist the regulations separately. - 40 - W28J160B/T 1 Address(A) VIH VIL 2 A IN t AVAV tEHEL tELEH tDVEH 3 AIN t AVEH 4 5 6 VIH #CE(E) VIL VIH #OE(G) VIL #WE(W) VIH VIL VIH VIL VIH VIL High Z RY/#BY(R) ("1") ("0") t WLEL t EHAX t EHGL t EHWH t EHDX DIN t FVEH DIN t EHQV1,2,3,4 Valid SRD DATA(D/Q) HIGH Z t PHEL DIN t EHFV #BYTE(F) t EHRL t VOL VIH VIL VIH VIL t VPEH t QVVL t SHEH t QVSL #WP(S) #RESET(P) VPPH1/2 VPP (V) VPPLK VIL Figure 17. AC Waveform for #CE-Controlled Write Operations Notes: 1. VDD power-up and standby. 2. Write each setup command. 3. Write each confirm command or valid address and data. 4. Automated erase or program delay. 5. Read status register data. 6. Write Read Array command. - 41 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T Reset Operations High Z RY/#BY(R) ("1") ("0") V OL #RESET(P) VIH V IL t PLPH (A)Reset During Read Array Mode High Z RY/#BY(R) ("1") ("0") VOL t PLRZ #RESET(P) VIH V IL t PLPH (B)Reset During Block Erase, Full Chip Erase, Word/Byte Write or Lock-Bit Configuration 2.7V VDD VIL VIH V IL (C)#RESET Rising Timing t 2VPH #RESET(P) Figure 18. AC Waveform for Reset Operation Reset AC Specifications PARAMETER #RESET Pulse Low Time (note 2) #RESET Low to Reset during Block Erase, Full Chip Erase, Word/Byte Write or Lock-Bit Configuration (note 1, 2) VDD 2.7V to #RESET High (note 2, 3) Notes: 1. If #RESET is asserted while a block erase, full chip erase, word/byte write or lock-bit configuration operation is not executing, the reset will complete within 100 nS. 2. A reset time, tPHQV, is required from the later of RY/#BY(SR.7) going High Z("1") or #RESET going high until outputs are valid. Refer to AC Characteristics - Read-Only Operations for tPHQV. 3. When the device power-up, holding #RESET low minimum 100ns is required after VDD has been in predefined range and also has been in stable there. SYM. tPLPH tPLRZ t2VPH MIN. 100 MAX. UNIT nS 30 100 S nS - 42 - W28J160B/T Block Erase, Full Chip Erase, Word/Byte Write And Lock-Bit Configuration Performance(3) VDD = 2.7V to 3.6V, TA = 0C to +70C for W28J160BT/TT90C; TA = -40C to +85C for W28J160BT/TT90L VPP = 2.7V - 3.6V VPP = 11.7V - 12.3V SYMBOL PARAMETER 32K word Block 4K word Block 64K byte Block 8K byte Block 32K word Block 4K word Block 64K byte Block 8K byte Block 32K word Block 64K byte Block 4K word Block 8K byte Block TA = 0 to +70 C TA = -40 to +85 C NOTES 2 2 2 2 2 2 2 2 2 2 2 2 2 2 4 4 Typ.(1) 33 36 31 32 1.1 0.15 2.2 0.3 1.2 0.6 42 22.8 56 1 6 16 Max. 200 200 200 200 4 0.5 7 1 6 5 210 114 200 5 15 30 Typ.(1) 20 27 19 26 0.66 0.12 1.4 0.25 0.9 0.5 32 17.5 42 0.69 6 16 Max. UNIT S S S S S S S S S S S S S tWHQV1 tEHQV1 Word Write Time Byte Write Time Block Write Time (In word mode) Block Write Time (In byte mode) tWHQV2 tEHQV2 Block Erase Time Full Chip Erase Time tWHQV3 tEHQV3 tWHQV4 tEHQV4 tWHRZ1 tEHRZ1 tWHRZ2 tEHRZ2 Notes: Set Lock-Bit Time Clear Block Lock-Bits Time Word/Byte Write Suspend Latency Time to Read Block Erase Suspend Latency Time to Read 15 30 S S 1. Typical values measured at TA = +25C and VDD = 3.0V, VPP = 3.0V or 12.0V. Assumes corresponding lock-bits are not set. Subject to change based on device characterization. 2. Excludes system-level overhead. 3. Sampled but not 100% tested. 4. A latency time is required from issuing suspend command(#WE or #CE going high) until RY/#BY going High Z or SR.7 going "1". - 43 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T 12. ADDITIONAL INFORMATION Block Erase Suspend and Resume Command If the time between writing the Block Erase Resume command and writing the Block Erase Suspend command is shorter than 15ms and both commands are written repeatedly, a longer time is required than standard block erase until the completion of the operation. Recommended Operating Conditions At Device Power-up AC timing illustrated in Figure 19 is recommended for the supply voltages and the control signals at device power-up. If the timing in the figure is ignored, the device may not operate correctly. VDD #RESET (p) Vpp *2 VDD (min) Vss VIH V IL V PPH1/2 Vss VIH VIL VIH VIL VIH VIL VIH VIL VIH VIL VOH VOL HIGH Z Valid Output tF t GLQV tR tVR t 2VPH*1 tR t PHQV (V) t R or tF tAVQV tR or t F ADDRESS (A) Valid Address tF t ELQV tR #CE (E) #WE (W) #OE (G) #WP (S) DATA (D/Q) *1 t5VPH for the device in 5V operations. *2 To prevent the unwanted writes, system designers should consider the VPP switch, which connects VPP to VSS during read operations and VPPH1/2 during write or erase operations. Figure 19. AC Timing at Device Power-up For the AC specifications tVR, tR, tF in the figure, refer to the next page. See the "ELECTRICAL SPECIFICATIONS" described in specifications for the supply voltage range, the operating temperature and the AC specifications not shown in the next page. - 44 - W28J160B/T Rise and Fall Time PARAMETER VDD Rise Time (note 1) Input Signal Rise Time (note 1, 2) Input Signal Fall Time (note 1, 2) Notes: 1. Sampled, not 100% tested. 2. This specification is applied for not only the device power-up but also the normal operations. tR(Max.) and tF(Max.) for #RESET are 50 S/V SYMBOL tVR tR tF MIN. 0.5 MAX. 30000 1 1 UNIT S/ V S/ V S/ V Glitch Noises Do not input the glitch noises which are below VIH (Min.) or above VIL (Max.) on address, data, reset, and control signals, as shown in Figure 20 (b). The acceptable glitch noises are illustrated in Figure 20 (a). Input Singal VIH (Min.) Input Singal VIH (Min.) VIL (Max.) Input Singal V IL (Max.) Input Singal (a) Acceptable Glitch Noises (b) NOT Acceptable Glitch Noises Figure 20. Waveform for Glitch Noises See the "DC CHARACTERISTICS" described in specifications for VIH (Min.) and VIL (Max.). - 45 - Publication Release Date: April 7, 2003 Revision A4 W28J160B/T 13. ORDERING INFORMATION PART NO. ACCESS TIME (nS) OPERATING TEMPERATURE (C) BOOT BLOCK PACKAGE W28J160BT90C W28J160TT90C W28J160BT90L W28J160TT90L Notes: 90 90 90 90 0 C to 70 C 0 C to 70 C -40 C to 85 C -40 C to 85 C Bottom Boot Top Boot Bottom Boot Top Boot 48L TSOP 48L TSOP 48L TSOP 48L TSOP 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. 14. PACKAGE DIMENSION 48-Lead Standard Thin Small Outline Package (measured in millimeters) 1 48 e MILLIMETER INCH Sym. MIN. NOM. MAX. MIN. NOM. MAX. A A1 0.05 0.95 18.3 19.8 11.9 0.17 0.10 0.50 1.20 0.002 1.00 18.4 20.0 12.0 0.22 1.05 18.5 20.2 12.1 0.047 0.037 0.039 0.041 0.720 0.724 0.728 0.780 0.787 0.795 0.468 0.472 0.476 0.004 0.020 E b A2 D HD E D HD A2 L L1 c b c e L L1 0.27 0.007 0.009 0.011 0.21 0.60 0.80 0.10 0.008 0.50 0.70 0.020 0.024 0.028 0.031 0.004 A A1 Y Y 0 5 0 5 - 46 - W28J160B/T 15. VERSION HISTORY VERSION A1 A2 DATE May 21, 2002 Aug. 5, 2002 PAGE All 15 A3 A4 Nov. 18, 2002 Apr. 7, 2003 31, 35, 38, 40, 43 All Initial Issued Update descriptions and correct typo Specify the device ID for top and bottom boot parts Correct the typo of W28J160BT/TT90C and W28J160BT/TT90L Update descriptions and correct typo DESCRIPTION Headquarters No. 4, Creation Rd. III, Science-Based Industrial Park, Hsinchu, Taiwan TEL: 886-3-5770066 FAX: 886-3-5665577 http://www.winbond.com.tw/ Winbond Electronics Corporation America 2727 North First Street, San Jose, CA 95134, U.S.A. TEL: 1-408-9436666 FAX: 1-408-5441798 Winbond Electronics (Shanghai) Ltd. 27F, 2299 Yan An W. Rd. Shanghai, 200336 China TEL: 86-21-62365999 FAX: 86-21-62365998 Taipei Office 9F, No.480, Rueiguang Rd., Neihu District, Taipei, 114, Taiwan, R.O.C. TEL: 886-2-8177-7168 FAX: 886-2-8751-3579 Winbond Electronics Corporation Japan 7F Daini-ueno BLDG, 3-7-18 Shinyokohama Kohoku-ku, Yokohama, 222-0033 TEL: 81-45-4781881 FAX: 81-45-4781800 Winbond Electronics (H.K.) Ltd. Unit 9-15, 22F, Millennium City, No. 378 Kwun Tong Rd., Kowloon, Hong Kong TEL: 852-27513100 FAX: 852-27552064 Please note that all data and specifications are subject to change without notice. All the trade marks of products and companies mentioned in this data sheet belong to their respective owners. - 47 - Publication Release Date: April 7, 2003 Revision A4 |
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