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| PD -94903 IRG4BC10KDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast IGBT VCES = 600V * High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Tighter parameter distribution and higher efficiency than previous generations * IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes * Lead-Free G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-channel Benefits * Latest generation 4 IGBTs offer highest power density motor controls possible * HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 9.0 5.0 18 18 4.0 16 10 20 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A s V W C Thermal Resistance RJC RJC RCS RJA Wt Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --- --- --- --- --- Typ. --- --- 0.50 --- 2 (0.07) Max. 3.3 7.0 --- 80 --- Units C/W g (oz) www.irf.com 1 12/23/03 IRG4BC10KDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Temperature Coeff. of Breakdown Voltage -- 0.58 -- V/C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage -- 2.39 2.62 IC = 5.0A VGE = 15V See Fig. 2, 5 -- 3.25 -- V IC = 9.0A -- 2.63 -- IC = 5.0A, TJ = 150C Gate Threshold Voltage 3.0 -- 6.5 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 1.2 1.8 -- S VCE = 50V, IC = 5.0A Zero Gate Voltage Collector Current -- -- 250 A VGE = 0V, VCE = 600V -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C Diode Forward Voltage Drop -- 1.5 1.8 V IC = 4.0A See Fig. 13 -- 1.4 1.7 IC = 4.0A, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 19 2.9 9.8 49 28 97 140 0.25 0.14 0.39 -- 46 32 100 310 0.56 7.5 220 29 7.5 28 38 2.9 3.7 40 70 280 235 Max. Units Conditions 29 IC = 5.0A 4.3 nC VCC = 400V See Fig.8 15 VGE = 15V -- -- TJ = 25C ns 150 IC = 5.0A, VCC = 480V 210 VGE = 15V, RG = 100 -- Energy losses include "tail" -- mJ and diode reverse recovery 0.48 See Fig. 9,10,14 -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 100 , VCPK < 500V -- TJ = 150C, See Fig. 10,11,14 -- IC = 5.0A, VCC = 480V ns -- VGE = 15V, RG = 100 -- Energy losses include "tail" -- mJ and diode reverse recovery -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 42 ns TJ = 25C See Fig. 57 TJ = 125C 14 IF = 4.0A 5.2 A TJ = 25C See Fig. 6.7 TJ = 125C 15 VR = 200V 60 nC TJ = 25C See Fig. 105 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4BC10KDPBF 6.0 For both: 5.0 LOAD CURRENT (A) 4.0 Square wave: Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 9.2 W 3.0 60% of rated voltage I 2.0 1.0 Ideal diodes 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 C 10 I C , Collector-to-Emitter Current (A) I C, Collector Current (A) TJ = 150 C 10 TJ = 150 C TJ = 25 C 1 5 10 1 1.0 V GE = 15V 20s PULSE WIDTH 2.0 3.0 4.0 5.0 6.0 7.0 V CC = 50V 5s PULSE WIDTH 15 20 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC10KDPBF 10 5.0 8 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) IC = 10 A 4.0 6 3.0 4 IC = 5A 2.0 IC = 2.5 A 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC10KDPBF 400 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 5.0A C, Capacitance (pF) 300 16 Cies 200 12 8 100 Coes Cres 1 10 100 4 0 0 VCE , Collector-to-Emitter Voltage (V) 0 4 8 12 16 20 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.40 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 0.38 I C = 5.0A 50 RG = Ohm VGE = 15V VCC = 480V 0.36 IC = 10 A 1 0.34 IC = 5A 0.32 IC = 2.5 A 0.30 0 20 40 60 80 100 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance () TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC10KDPBF 2.0 1.5 1.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE = Ohm 50 = 150 C = 480V = 15V 100 VGE = 20V T J = 125 o C 10 0.5 0.0 0 2 4 6 8 10 1 SAFE OPERATING AREA 1 10 100 1000 I C , Collector Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA 10 TJ = 150C T = 125C J J T = 25C 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC10KDPBF 50 14 VR = 200V TJ = 125C TJ = 25C 45 I F = 8.0A I F = 4.0A 12 10 40 I F = 8.0A I F = 4.0A trr- (ns) 35 Irr- ( A) 8 6 30 4 25 VR = 200V TJ = 125C TJ = 25C 20 100 2 di f /dt - (A/s) 1000 0 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 VR = 200V TJ = 125C TJ = 25C 160 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125C TJ = 25C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /s) 120 I F = 4.0A I F = 4.0A Qrr- (nC) 80 40 0 100 di f /dt - (A/s) 1000 100 100 A di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt, www.irf.com 7 IRG4BC10KDPBF Same type device as D.U.T. 80% of Vce 430F D.U.T. 90% Vge V C 10% 90% td(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 10% IC 5% t d(on) tr tf t=5s Eon Ets= (Eon +Eoff ) Eoff Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = trr id dt Ic dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dtdt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd idIc dt Vd dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC10KDPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC10KDPBF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 100 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMP L E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NUMB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 10 www.irf.com |
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