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DATA SHEET
BLF546 UHF push-pull power MOS transistor
Product specification October 1992
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability * Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT268 PIN 1 2 3 4 5 DESCRIPTION drain 1 gate 1 gate 2 drain 2 source
2 Top view 3
handbook, halfpage 1
BLF546
PIN CONFIGURATION
4
d g s g
5
d
MAM395
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 PL (W) 80 Gp (dB) > 11 D (%) > 50
October 1992
2
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature CONDITIONS - - - up to Tmb = 25 C; total device; - both sections equally loaded -65 - MIN.
BLF546
MAX. 65 20 9 145 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS total device; both sections equally loaded total device; both sections equally loaded THERMAL RESISTANCE 1.2 K/W 0.25 K/W
102 handbook, halfpage ID (A)
MRA995
handbook, halfpage
200
MDA519
Ptot
(W) 160
(2)
120 10
(1) (2) (1)
80
40
1 1 10 VDS (V)
102
0 0 40 80 120 Th (C) 160
(1) Current in this area may be limited by RDS(on). (2) Tmb = 25 C. Total device; both sections equally loaded.
(1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
October 1992
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
CHARACTERISTICS (per section) Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 20 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 80 mA; VDS = 10 V ID = 2.4 A; VDS = 10 V ID = 2.4 A; VGS = 10 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 1 1.2 - - - - -
BLF546
TYP. MAX. UNIT - - - - 1.7 0.4 10 60 46 15 - 2 1 4 - 0.6 - - - - V mA A V S A pF pF pF
handbook, halfpage
12
MDA520
handbook, halfpage
12
MDA521
T.C. (mV/K) 8
ID (A) 8
4
4 0
-4 10-2
10-1
1
ID (A)
10
0 0 4 8 12 VGS (V) 16
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values per section.
Fig.5
Drain current as a function of gate-source voltage, typical values per section.
October 1992
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
handbook, halfpage
0.8
MDA522
handbook, halfpage
250
MDA523
RDSon () 0.6
C (pF) 200
150 0.4 100 0.2 50
Cis Cos
0 0 40 80 120 Tj (C) 160
0 1 10 20 30 VDS (V) 40
ID = 2.4 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values per section.
handbook, halfpage
80
MDA524
Crs (pF) 60
40
20
0 0 10 20 30 VDS (V) 40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values per section.
October 1992
5
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.25 K/W, unless otherwise specified. RF performance in a common source, class-B, push-pull circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 IDQ (mA) 2 x 80 PL (W) 80 Gp (dB) > 11 typ. 13
BLF546
D (%) > 50 typ. 60
Ruggedness in class-B operation The BLF546 is capable of withstanding a full load mismatch corresponding to VSWR = 10 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power.
handbook, halfpage
25 Gp (dB)
MDA525
100 C (%) 80
handbook, halfpage
120
MDA526
20 Gp
PL (W) 80
15 C 10
60
40 40
5
20
0 40
60
80
100
PL (W)
0 120
0 0 4 8 12 PIN (W) 16
Class-B operation; VDS = 28 V; IDQ = 2 x 80 mA; ZL = 2.3 + j2.7 (per section); f = 500 MHz.
Class-B operation; VDS = 28 V; IDQ = 2 x 80 mA; ZL = 2.3 + j2.7 (per section); f = 500 MHz.
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
October 1992
6
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
handbook, full pagewidth
C12
+VD C13
VBIAS
R1
R2 C8 C7 R7 C14 L20
R3 D.U.T. L1 C1 L4 L6 L8 L10 L12 L14
L16 L18 L22 L24 C23 L26
50 input
L2 C3 C1 L3 L5 L7 L9 L11 L13 BLF546 R4 C15 C10 C11 R8 VBIAS R5 R6 C17 +VD L21
MDA530
L27 C4 C5 C6 C9 C18 C19 C20 C21 C22 C24 L15 L19 L17 L23 L25 L28
50 output
C16
f = 500 MHz.
Fig.11 Test circuit for class-B operation.
List of components (class-B test circuit) COMPONENT C1, C2 C3 C4, C6, C21, C22 C5 DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 2) VALUE 33 pF, 500 V 11 pF, 500 V 2 to 9 pF 12 pF, 500 V 390 pF, 500 V 100 nF, 50 V 39 pF, 500 V 4.7 F, 63 V 18 pF, 500 V 2222 030 38478 2222 852 47104 2222 809 09005 DIMENSIONS CATALOGUE NO.
C7, C10, C14, C15 multilayer ceramic chip capacitor (note 1) C8, C11, C12, C17 multilayer ceramic chip capacitor C9 C13, C16 C18, C19 multilayer ceramic chip capacitor (note 2) electrolytic capacitor multilayer ceramic chip capacitor (note 2)
October 1992
7
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
COMPONENT C20 C23, C24 L1, L3, L26, L28 L2
DESCRIPTION multilayer ceramic chip capacitor (note 2) multilayer ceramic chip capacitor (note 1) stripline (note 3) semi-rigid cable (note 4)
VALUE 15 pF, 500 V 15 pF, 500 V 50 50
DIMENSIONS
CATALOGUE NO.
55.6 x 2.4 mm ext. dia. 2 mm ext. conductor length 55.6 mm 12 x 3 mm 26.5 x 3 mm 5.5 x 3 mm 6 x 3 mm 3 x 3 mm 7 x 3 mm length 8.5 mm int. dia. 5.4 mm leads 2 x 5 mm 12 x 3 mm 4312 020 36642 20 x 3 mm 14 x 3 mm ext. dia. 2 mm ext. conductor length 55.6 mm 2322 151 71153 2322 151 71003 2322 153 51009
L4, L5 L6, L7 L8, L9 L10, L11 L12, L13 L14, L15 L16, L17
stripline (note 3) stripline (note 3) stripline (note 3) stripline (note 3) stripline (note 3) stripline (note 3) 3 turns enamelled 1 mm copper wire stripline (note 3) grade 3B Ferroxcube RF choke stripline (note 3) stripline (note 3) semi-rigid cable (note 5)
42 42 42 42 42 42 15.6 nH
L18, L19 L20, L21 L22, L23 L24, L25 L27
42 42 42 50
R1, R5 R2, R6 R3, R4 R7, R8 Notes
0.4 W metal film resistor 10 turns cermet potentiometer 0.4 W metal film resistor 1 W metal film resistor
11.5 k 50 k 10 k 10
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (r = 2.2); thickness 132 inch. 4. Semi-rigid cable L2 is soldered on to stripline L3. 5. Semi-rigid cable L27 is soldered on to stripline L28.
October 1992
8
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
200
handbook, full pagewidth
straps
straps
85
VD R2 C12 C13 L20 L2 L3 C7 C8 L8 L4 C3 L5 C4 L6 L7 C5 C14 L16 L18 C19 L19 L17 C20 C21 L22 L23 C22 C23 L24 L25 C24 R3 L10 L12 L14 C6 C9 C18 L13 L15 L11 L9 R4 C10 C11 C15 R7 L27 L28
C1
C2
L1
R8 L21 C16
L26
R6
C17
MDA518
VD
The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm.
Fig.12 Component layout for 500 MHz test circuit.
October 1992
9
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
handbook, halfpage
2 Zi
MDA527
handbook, halfpage
() 0
ri xi
10 ZL
MDA528
() 8
-2
6
RL
-4
4
XL
-6
2
-8
0 0 200 400 f (MHz) 600 0 200 400 f (MHz) 600
Class-B operation; VDS = 28 V; IDQ = 2 x 80 mA; PL = 80 W.
Class-B operation; VDS = 28 V; IDQ = 2 x 80 mA; PL = 80 W.
Fig.13 Input impedance as a function of frequency (series components), typical values per section.
Fig.14 Load impedance as a function of frequency (series components), typical values per section.
handbook, halfpage
30
MDA529
Gp (dB) 20
10
0 0 200 400 f (MHz) 600
Class-B operation; VDS = 28 V; IDQ = 2 x 80 mA; PL = 80 W.
Fig.15 Power gain as a function of frequency, typical values per section.
October 1992
10
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads
BLF546
SOT268A
D
A F
5
U1 q H1 w2 M C C
B
c
1
4
H
U2
P
E
w1 M A B A
2
b e
3
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.91 4.19 0.193 0.165 b 1.66 1.39 c 0.13 0.07 D 12.96 12.44 0.510 0.490 E 6.48 6.22 e 6.45 F 2.04 1.77 H 17.02 16.00 H1 8.23 7.72 p 3.43 3.17 Q 2.67 2.41 q 18.42 U1 24.90 24.63 0.980 0.970 U2 6.61 6.35 0.260 0.250 w1 0.51 0.02 w2 1.02 0.04 w3 0.26 0.01
0.065 0.005 0.055 0.003
0.255 0.080 0.670 0.254 0.245 0.070 0.630
0.324 0.135 0.304 0.125
0.105 0.725 0.095
OUTLINE VERSION SOT268A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
October 1992
11
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF546
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1992
12

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