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BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
Rev. 08 -- 26 October 2005 Product data sheet
1. Product profile
1.1 General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.
Table 1: Typical performance RF performance at Th = 25 C in a common source class-AB test circuit; IDq = 150 mA; typical values. Mode of operation Pulsed class-AB: 1030 MHz to 1090 MHz Conditions tp = 50 s; = 2 % tp = 128 s; = 2 % tp = 340 s; = 1 % CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. VDS (V) 36 36 36 PL (W) 200 250 250 Gp (dB) 15 14 14 D (%) 50 50 50 tr (ns) 35 35 35 tf (ns) 6 6 6
1.2 Features
s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a supply voltage of 36 V and an IDq of 150 mA: x Load power 200 W x Gain 13 dB x Efficiency 45 % x Rise time 50 ns x Fall time 50 ns s High power gain s Easy power control s Excellent ruggedness s Source on mounting flange eliminates DC isolators, reducing common mode inductance
1.3 Applications
s Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Symbol
BLA1011-200 (SOT502A)
1 3 2 2 3
sym039
1
BLA1011S-200 (SOT502B) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym039
[1]
Connected to flange
3. Ordering information
Table 3: Ordering information Package Name BLA1011-200 BLA1011S-200 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads Version SOT502A SOT502B Type number
4. Limiting values
Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Ptot Tstg Tj Parameter drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature Th 25 C; tp = 50 s; = 2 % Conditions Min -65 Max 75 22 700 +150 200 Unit V V W C C
9397 750 14634
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 26 October 2005
2 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
5. Thermal characteristics
Table 5: Symbol Zth(j-h)
[1]
Thermal characteristics Parameter Conditions
[1]
Typ 0.15
Unit K/W
thermal impedance from junction to heatsink Th = 25 C
Thermal resistance is determined under RF operating conditions; tp = 50 s, = 10 %.
6. Characteristics
Table 6: Characteristics Tj = 25 C unless otherwise specified Symbol Parameter VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current transfer conductance Conditions VDS = 10 V; ID = 300 mA VGS = 0 V; VDS = 36 V VGS = VGS(th) + 9 V; VDS = 10 V VGS = 20 V; VDS = 0 V VDS = 10 V; ID = 10 A Min 75 4 45 Typ 9 60 Max Unit 5 1 1 V V A A A S m V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3 mA
drain-source on-state resistance VGS = 9 V; ID = 10 A
7. Application information
Table 7: Application information RF performance in a common source pulsed class-AB circuit; (tp = 50 s; = 2 %); f = 1030 MHz and 1090 MHz; Th = 25 C; Zth(mb-h) = 0.15 K/W; IDq = 150 mA; unless otherwise specified. Symbol VDS PL Gp D tr tf Parameter drain-source voltage load power power gain drain efficiency rise time fall time tp = 50 s; = 2 % PL = 200 W tp = 50 s; = 2 % Conditions Min 13 45 Typ 36 200 50 50 Max Unit V W dB % ns ns
7.1 Ruggedness in class-AB operation
The BLA1011-200 and BLA1011S-200 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 36 V; f = 1030 MHz to 1090 MHz at rated load power.
9397 750 14634
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 26 October 2005
3 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
20 Gp (dB) 15
mgw033
80 D (%) 60
250 PL (W) 200
mgw034
Gp
150 10 D 40 100 5 20 50
0 0 50 100 150
0 200 250 PL (W)
0 0 2 4 6 PD (W) 8
VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 s; =2%
VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 s; =2%
Fig 1. Power gain and drain efficiency as functions of load power; typical values
mgw035
Fig 2. Load power as a function of drive power; typical values
250 PL (W) 200
mgw036
20 Gp (dB) 16 150 mA IDq = 1.5 A
20 Gp (dB) 16
Gp 12 150 12
8
100
PL
8
4
50
4
0 0 50 100 150 200 250 PL (W)
0 0 1 2 3 4 VGS (V) 5
0
VDS = 36 V; f = 1060 MHz; tp = 50 s; = 2 %
VDS = 36 V; IDq = 150 mA; Pi = 5.5 W; f = 1060 MHz; tp = 50 s; = 2 %
Fig 3. Power gain as a function of load power; typical values
Fig 4. Load power and power gain as functions of gate-source voltage; typical values
9397 750 14634
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 26 October 2005
4 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
20 Gp (dB) 15
mgw037
80 D (%) 60
5 Zi (W) 4 ri xi
mgw038
Gp
D 10 40
3
2 5 20 1
0 1020
1040
1060
1080
0 1100 f (MHz)
0 1020
1040
1060
1080
1100 f (MHz)
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 s; =2%
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 s; =2%
Fig 5. Power gain and drain efficiency a functions of frequency; typical values
Fig 6. Input Impedance as a function of frequency (series components); typical values
mgw039
4 ZL (W) 2
RL 0
XL -2
-4 1020
1040
1060
1080
1100 f (MHz)
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 s; = 2 %
Fig 7. Load impedance as a function of frequency (series components); typical values
9397 750 14634
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 26 October 2005
5 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
8. Test information
40 40
60
C6
+
C5 R2 C4 C3 C1 R1
C10 C9
+
C11
C8 L1 C7
C2
mgw032
Dimensions in mm. The components are situated on one side of the copper-clad Duroid Printed-Circuit Board (PCB) with r = 6.2 and thickness 0.64 mm. The other side is unetched and serves as a ground plane. See Table 8 for list of components.
Fig 8. Component layout for 1030 MHz to 1090 MHz test circuit
9397 750 14634
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 26 October 2005
6 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
List of components (see Figure 8) Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor -shaped enamelled 1 mm copper wire metal film resistor SMD 0508 resistor 301 18
[2] [1] [3] [1] [2] [1] [1] [1]
Table 8: C1 C2 C3 C4, C7 C5 C6 C8 C9 C10 C11 L1 R1 R2
[1] [2] [3]
Component
Value 39 pF 4.3 pF 11 pF 62 pF 100 pF 47 F; 20 V 20 pF 47 pF 1.2 nF 47 F; 63V
Dimensions
length = 38 mm
American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality. American Technical Ceramics type 700 or capacitor of same quality.
9397 750 14634
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 26 October 2005
7 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 9. Package outline SOT502A
9397 750 14634 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 26 October 2005
8 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 10. Package outline SOT502B
9397 750 14634 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 26 October 2005
9 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
10. Abbreviations
Table 9: Acronym IDq LDMOS RF SMD VSWR Abbreviations Description quiescent drain current Laterally Diffused Metal Oxide Semiconductor Radio Frequency Surface Mount Device Voltage Standing Wave Ratio
9397 750 14634
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 26 October 2005
10 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
11. Revision history
Table 10: Revision history Release date Data sheet status Product data sheet Change notice Doc. number 9397 750 14634 Supersedes BLA1011-200_7 Document ID
BLA1011-200_BLA1 20051026 011S-200_8 Modifications:
* *
The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. SOT502B package added. Product specification Product specification Product specification Product specification Product specification Product specification Product specification 9397 750 12246 9397 750 09414 9397 750 08376 9397 750 08139 9397 750 08109 9397 750 07638 9397 750 07326 BLA1011-200_6 BLA1011-200_5 BLA1011-200_4 BLA1011-200_N_3 BLA1011-200_N_2 BLA1011-200_N_1 -
BLA1011-200_7 BLA1011-200_6 BLA1011-200_5 BLA1011-200_4 BLA1011-200_N_3 BLA1011-200_N_2 BLA1011-200_N_1
20031111 20020318 20010515 20010417 20010302 20001201 20000906
9397 750 14634
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 26 October 2005
11 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
12. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
15. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14634
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 26 October 2005
12 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
17. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12
(c) Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 October 2005 Document number: 9397 750 14634
Published in The Netherlands

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