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| AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .REFRACTORY/ .EMI .LOW .I .OVERLAY .METAL/ .P .BANDWI DESCRIPTION G OLD METALLIZATION T TER SITE BALLASTED THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY CERAMIC HERMETIC PACKAGE OUT = 90 W MIN. WITH 13 dB GAIN DTH 225 MHz .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM0912-080 BRANDING 0912-80 PIN CONNECTION The AM0912-080 Avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. This device is also designed for specialized applications including JTIDS where reduced power provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM0 912-08 0 is ho used in the unique AMPACTM Hermetic Metal/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC 100C) 220 7.0 50 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.80 C/W *Applies only to rated RF amplifier operation September 1992 1/3 AM0912-080 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICBO hFE DYNAMIC Symbol IC = 40mA IE = 10mA IC = 40mA VCB = 50V VCE = 5V IE = 0mA IC = 0mA RBE = 10 IC = 2A 65 3.0 65 -- 20 -- -- -- -- -- -- -- -- 12 120 V V V mA -- Test Conditions Value Min. Typ. Max. Unit POUT c GP Note: f = 960 -- 1215MHz f = 960 -- 1215MHz f = 960 -- 1215MHz = = 10Sec 10% PIN = 13W PIN = 13W PIN = 13W VCC = 50V VCC = 50V VCC = 50V 90 38 8.4 100 44 -- -- -- -- W % dB Pulse Width Duty Cycle TEST CIRCUIT Ref. Dwg. No. J-313120 .120 All dimensions are in inches. Substrate material: .025 thick AI2O3 C1,C2 : 0.3 - 3.5 pF Johanson Capacitors, or Equiv. C3 : 100 pF Chip Capacitor C4,C6 : 1500 pF RF Feedthru C5 : 100 MF, Electrolytic 50V L1,L2 : No. 32 Wire, 4 Turn .062 I.D. RBE : 0 - 1.0 Ohm 2/3 AM0912-080 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 3/3 |
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