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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6437/D High-Power PNP Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. * High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 100 Vdc (Min) -- 2N6437 VCEO(sus) = 120 Vdc (Min) -- 2N6438 * High DC Current Gain -- hFE = 20-80 @IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc * Fast Switching Times @ IC = 10 Adc tr = 0.3 s (Max) ts = 1.0 s (Max) tf = 0.25 s (Max) * Complement to NPN 2N6339 thru 2N6341 2N6437 2N6438* *Motorola Preferred Device 25 AMPERE POWER TRANSISTORS PNP SILICON 100, 120 VOLTS 200 WATTS MAXIMUM RATINGS (1) Rating Collector-Base Voltage Emitter-Base Voltage Symbol VCB VCEO VEB IC IB PD 2N6437 120 100 2N6438 140 120 Unit Vdc Vdc Vdc Adc Adc CASE 1-07 TO-204AA (TO-3) PD, POWER DISSIPATION (WATTS) IIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIII IIIIII I I IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII Collector-Emitter Voltage 6.0 25 50 10 Collector Current -- Continuous Peak Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 200 1.14 Watts W/_C TJ,Tstg - 65 to + 200 _C THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Unit Thermal Resistance, Junction to Case 0.875 _C/W (1) Indicates JEDEC Registered Data. 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. (c) Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 1 2N6437 2N6438 0 - 11 V 10 s tr, tf 10 ns DUTY CYCLE = 1.0% t, TIME ( s) III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII III I I I IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIII I I IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Vdc Collector-Emitter Sustaining Voltage (1) (IC = 50 mAdc, IB = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) VCEO(sus) 2N6437 2N6438 100 120 -- -- -- -- -- -- -- -- -- -- -- ICEO Adc 2N6437 2N6438 50 50 Collector Cutoff Current (VCE = 110 Vdc, VBE(off) = -1.5 Vdc) (VCE = 130 Vdc, VBE(off) = -1.5 Vdc) (VCE = 100 Vdc, VBE(off) = -1.5 Vdc, TC = 150_C) (VCE = 120 Vdc, VBE(off) = -1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 140 Vdc, IE = 0) ICEX Adc 2N6437 2N6438 2N6437 2N6438 2N6437 2N6438 10 10 1.0 1.0 10 10 mAdc Adc ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) DC Current Gain (1) (IC = 0.5 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 25 Adc, VCE = 2.0 Vdc) IEBO hFE 100 Adc -- ON CHARACTERISTICS 30 20 12 -- -- -- -- -- 120 -- 1.0 1.8 1.8 2.5 -- Collector-Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) Base-Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VCE(sat) Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCE = 10 Vdc, IE = 0, f = 100 kHz) fT Cob tr ts tf 40 -- -- -- -- MHz pF s s s 700 0.3 1.0 SWITCHING CHARACTERISTICS Rise Time (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = 1.0 Adc) Storage (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc) Fall Time (VCC = 80 Vdc, IC = 10 A,VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc) * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. 0.25 v v VCC + 80 V 0.3 0.2 td @ VBE(off) = 6.0 V RC 8.0 OHMS + 9.0 V RB = 10 OHMS MBR745 - 5.0 V SCOPE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.3 tr VCC = 80 V IC/IB = 10 TJ = 25C v NOTE: For information on Figures 3 and 6, RB and RC were varied to obtain desired test conditions. 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 20 30 Figure 2. Switching Time Test Circuit Figure 3. Turn-On Time 2 Motorola Bipolar Power Transistor Device Data 2N6437 2N6438 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 0.01 D = 0.5 0.2 0.1 0.05 0.02 t1 t2 P(pk) ZJC(t) = r(t)RJC RJC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 100 50 IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 2.0 1.0 ms 5.0 ms TJ = 200C dc 200 s BONDING WIRE LIMITED THERMALLY LIMITED TC = 25C (SINGLE PULSE) PULSE DUTY CYCLE 10% SECOND BREAKDOWN LIMITED v CURVES APPLY BELOW RATED VCEO 3.0 5.0 7.0 10 20 30 2N6437 2N6438 50 70 100 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 3.0 2.0 ts 1.0 t, TIME ( s) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.3 tf CAPACITANCE (pF) VCC = 80 V IB1 = IB2 IC/IB = 10 TJ = 25C 4000 3000 2000 Cib TJ = 25C 1000 700 500 300 Cob 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 2N6437 2N6438 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 TJ = 150C hFE, DC CURRENT GAIN 100 70 50 30 20 VCE = 2.0 V VCE = 4.0 V 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 + 25C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.02 0.03 0.5 0.7 1.0 0.05 0.07 0.1 0.2 0.3 IB, BASE CURRENT (AMP) 2.0 IC = 2.0 A 5.0 A 10 A TJ = 25C 20 A - 55C 10 Figure 8. DC Current Gain Figure 9. Collector Saturation Region 2.0 1.8 1.6 V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 VBE @ VCE = 2.0 V VBE(sat) @ IC/IB = 10 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.3 0.5 0.7 1.0 VB FOR VBE *VC FOR VCE(sat) *APPLIES FOR IC/IB v hFE @ VCE + 2.0 V 2 + 25C to +150C - 55C to + 25C + 25C to +150C - 55C to + 25C 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 102 TJ = +150C IC, COLLECTOR CURRENT ( A) IB , BASE CURRENT ( A) 101 +100C 100 10-1 + 25C 10-2 10-3 + 0.2 REVERSE 101 TJ = +150C 100 +100C 10-1 VCE = 40 V VCE = 40 V FORWARD 10-2 10-3 + 25C REVERSE FORWARD 0 - 0.08 - 0.16 - 0.24 + 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 10-4 + 0.16 + 0.08 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region Figure 13. Base Cutoff Region 4 Motorola Bipolar Power Transistor Device Data 2N6437 2N6438 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 2N6437 2N6438 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 6 Motorola Bipolar Power Transistor Device Data 2N6437/D |
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