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| SUM23N15-73 Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 150 rDS(on) (W) 0.073 @ VGS = 10 V 0.077 @ VGS = 6 V ID (A) 23 22.5 D D D D TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized APPLICATIONS D Primary Side Switch D TO-263 G G DS S Top View Ordering Information: SUM23N15-73 N-Channel MOSFET SUM23N15-73 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 150 "20 23 13.4 35 25 31 100b 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72143 S-03535--Rev. A, 24-Mar-03 www.vishay.com Mount)c Symbol RthJA RthJC Limit 40 1.5 Unit _C/W 1 SUM23N15-73 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 120 V, VGS = 0 V, TJ = 125_C VDS = 120 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Drain Source On State Resistancea VGS = 10 V, ID = 15 A, TJ = 125_C rDS( ) DS(on) VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 6 V, ID = 10 A Forward Transconductancea gfs VDS = 15 V, ID = 25 A 10 0.062 35 0.059 0.073 0.140 0.168 0.077 S W 150 V 2 4 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 75 V, RL = 3.26 W ID ^ 23 A, VGEN = 10 V, RG = 2.5 W VDS = 75 V, VGS = 10 V, ID = 23 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 1290 160 70 22 6 7.5 4.0 10 60 30 45 15 90 43 70 ns W 35 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 23 A, di/dt = 100 A/ms IF = 23 A, VGS = 0 V 1.0 100 5 0.25 35 23 1.5 150 8 0.6 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72143 S-03535--Rev. A, 24-Mar-03 SUM23N15-73 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 35 30 I D - Drain Current (A) 25 20 15 10 5 0 0 3 6 9 4V 12 15 0 0 1 2 3 4 5 6 VGS = 10 thru 6 V 28 I D - Drain Current (A) 35 Transfer Characteristics 21 14 TC = 125_C 7 25_C - 55_C 5V VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 50 TC = - 55_C r DS(on) - On-Resistance ( W ) 40 g fs - Transconductance (S) 25_C 30 125_C 0.09 0.12 On-Resistance vs. Drain Current VGS = 6 V 0.06 VGS = 10 V 0.03 20 10 0 0 5 10 15 20 25 30 0.00 0 5 10 15 20 25 30 35 ID - Drain Current (A) ID - Drain Current (A) Capacitance 2000 20 Gate Charge 1600 C - Capacitance (pF) Ciss 1200 V GS - Gate-to-Source Voltage (V) 16 VDS = 75 V ID = 23 A 12 800 8 400 Crss 4 Coss 0 0 30 60 90 120 150 0 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Document Number: 72143 S-03535--Rev. A, 24-Mar-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM23N15-73 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.7 2.4 r DS(on) - On-Resistance (W) (Normalized) 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 - 50 1 0 I S - Source Current (A) VGS = 10 V ID = 15 A 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C - 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 190 180 V (BR)DSS (V) ID = 1.0 mA 170 160 150 140 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72143 S-03535--Rev. A, 24-Mar-03 SUM23N15-73 Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 25 100 Safe Operating Area Limited by rDS(on) 20 I D - Drain Current (A) I D - Drain Current (A) 10 10 ms 100 ms 15 1 ms 10 ms TC = 25_C Single Pulse 100 ms dc 10 1 5 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 72143 S-03535--Rev. A, 24-Mar-03 www.vishay.com 5 |
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