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| AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications). AOD408L is a Green Product ordering option. AOD408 and AOD408L are electrically identical. Features VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 18m (VGS = 10V) RDS(ON) < 27m (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS 20 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation Power Dissipation B C Units V V A A mJ W W C TC=25C TC=100C C 18 ID IDM IAR EAR PD PDSM TJ, TSTG 18 40 18 40 60 30 2.5 1.6 -55 to 175 TC=100C TA=25C TA=70C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 16.7 40 1.9 Max 25 50 2.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD408 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=18A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, V GS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=18A TJ=125C 1 40 13.6 18 20.6 25 0.75 1 18 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 110 0.7 19.8 VGS=10V, V DS=15V, ID=18A 9.8 2.5 3.5 4.5 VGS=10V, V DS=15V, R L=0.82, RGEN=3 IF=18A, dI/dt=100A/s IF=18A, dI/dt=100A/s 3.9 17.4 3.2 19 8 25 0.85 25 12.5 1250 18 24 27 1.8 Min 30 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev 3: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 24 Normalized On-Resistance 22 RDS(ON) (m) 20 18 16 14 12 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V 1.4 ID=18A VGS=4.5V 1.2 1.6 VGS=10V 4V 10V 4.5V 3.5V 12 ID(A) 125C 8 VGS=3V 4 0 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 25C 20 16 VDS=5V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 1.0E+00 40 RDS(ON) (m) ID=18A IS (A) 1.0E-01 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C 30 125C 20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOD408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=18A Capacitance (pF) 1500 1250 1000 750 500 250 0 0 Crss 5 10 15 20 25 30 Coss Ciss VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited ID (Amps) 10.0 50 1ms 10ms 0.1s 1s 10s 100s Power (W) 40 30 20 10 0 0.001 T J(Max)=150C T A=25C 1.0 T J(Max)=150C T A=25C 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJA Normalized Transient Thermal Resistance 1 D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse 0.001 0.00001 T on T 10 100 1000 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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