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| SKM 180A020 Absolute Maximum Ratings Symbol Conditions Values Units Inverse diode SEMITRANSTM M1 Power MOSFET Modules SKM 180A020 Characteristics Symbol Conditions min. typ. max. Units Features Inverse diode Typical Applications Thermal characteristics Mechanical data MA 1 13-04-2004 RAA (c) by SEMIKRON SKM 180A020 Fig. 1 Rated power disipation vs. temperature Fig. 2 Maximum safe operating area Fig. 3 Output characteristic Fig. 4 Transfer characteristic Fig. 5 On-resistance vs. temperature Fig. 6 Rated current vs. temperature 2 13-04-2004 RAA (c) by SEMIKRON SKM 180A020 Fig. 7 Breakdown voltage vs. temperature Fig. 8 Drain-source voltage derating Fig. 9 Capacitances vs. drain-source voltage Fig. 10 Gate charge characteristic Fig. 14 Gate-source threshold voltage 3 13-04-2004 RAA (c) by SEMIKRON SKM 180A020 UL Recognized File no. E 63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 13-04-2004 RAA (c) by SEMIKRON |
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