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Datasheet File OCR Text: |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3198 TRANSISTORNPN (c) TO 92 FEATURE Power dissipation PCM : 0.625 W Tamb=25ae(c) Collector current ICM : 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T stg: -55aeto +150ae TJ : 150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 1.EMITTER 2. COLLECTOR 3. BASE 123 unless Test otherwise MIN 60 50 5 specified(c) TYP MAX UNIT V V V 0.1 0.1 |I A |I A conditions Ic= 100|I IE=0 A IC=5 mA , IB=0 IE= 100|I AIC=0 VCB=60V , IE=0 VEB= 5V , IC=0 hFE(1) DC current gain VCE=6 V, IC= 2mA VCE=6 V, IC= 150m A IC= 100mA, IB= 10 mA IC= 100mA, IB= 10 mA VCE= 10 V, IC= 1mA 70 25 100 0.1 700 hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) 0.25 1 V V Transition frequency f T 80 F=30MHz MHz CLASSIFICATION OF hFE(1) Rank Range O 70-140 Y 120-240 GR 200-400 BL 350-700 TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b |O e e1 Symbol A A1 b c D D1 E e e1 L O Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169 C |
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