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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. KTA1532T EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dissipation. Complementary to KTC3532T. C L G High-Speed Switching. 1 E F G H I J K L H J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING -20 -20 -5 -1.5 -3 -300 0.9 150 -55 ) 150 UNIT V V V A A mA W J 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=-12V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 IC=-750mA, IB=-15mA IC=-750mA, IB=-15mA VCE=-2V, IC=-100mA VCE=-2V, IC=-300mA VCB=-10V, f=1MHz PW=20s DC < 1% = IB2 IB1 OUTPUT RL MIN. -20 -20 -5 200 - RB 50 VR 220F 470F Storage Time tstg Fall Time tf V BE =5V -20I B1=20IB2=IC =-750mA VCC =-5V 2001. 6. 26 Revision No : 0 I TSM SB TYP. -120 -0.85 210 30 50 MAX. -0.1 -0.1 -180 -1.2 560 MHz pF UNIT A A V V V mV V - 90 - nS - 15 - 1/3 KTA1532T I C - V CE mA h FE - I C -20mA -2.0 COLLECTOR CURRENT I C (A) -50m mA 1K DC CURRENT GAIN h FE 500 300 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -30 -40 -1.8 V =-2V CE A -10mA -8mA -6mA -4mA -2mA IB=0mA Ta=7 Ta=2 Ta=-2 5C 5C 5C 100 50 30 -0.01 -0.03 -0.1 -0.3 -1 -3 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -500 -300 I C /I B =20 VCE(sat) - I C -1K -500 -300 I C /I B =50 -100 -50 -30 = Ta 75 C -100 -50 -30 C 75 Ta= C 25 Ta= 5 C -2 Ta= CC 5 =-2 25 Ta Ta= -10 -5 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -5 -3 COLLECTOR CURRENT IC (A) I C /I B =50 I C - V BE -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Ta=75 C Ta=25 C Ta=-25 C VCE =-2V -1 -0.5 -0.3 Ta=-25 C Ta=75 C Ta=25 C -0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) 2001. 6. 26 Revision No : 0 2/3 KTA1532T fT - IC TRANSITION FREQUENCY f T (MHz) 1K 500 300 COLLECTOR OUTPUT CAPACITANCE C ob (pF) VCE =-2V C ob - V CB 100 50 30 f=1MHz 100 50 30 -0.01 -0.03 -0.1 -0.3 -1 -3 10 5 3 -1 -3 -5 -10 -30 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA -5 -3 COLLECTOR CURRENT I C (A) -1 -0.5 -0.3 COLLECTOR POWER DISSIPATION PC (W) I C MAX.(PULSED) I C MAX (CONTINUOUS) DC Pc - Ta 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) S 0 * 10 10 OP 10 ER AT IO m 0m S* 1m S* 50 S* 0 S* N -0.1 -0.05 -0.03 -0.01 -0.1 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) -0.3 -1 -3 -10 -30 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 6. 26 Revision No : 0 3/3 This datasheet has been download from: www..com Datasheets for electronics components. |
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