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| MBRM5100 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEa3 Features NEW PRODUCT * * * * * Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Reverse Breakdown Voltage For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 A P 3 E G POWERMITEa3 Dim A B C Min 4.03 6.40 Max 4.09 6.61 .889 NOM 1.83 NOM 1.10 5.01 4.37 .71 .36 1.73 1.14 5.17 4.43 .77 .46 1.83 .178 NOM B J H D E G Mechanical Data * * * * * Case: POWERMITEa3 Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: See sheet 3 Weight: 0.072 grams (approx.) 1 2 M D C PIN 1 PIN 2 H K C L PIN 3, BOTTOMSIDE HEAT SINK J K L M P .178 NOM Note: Pins 1 & 2 must be electrically connected at the printed circuit board. All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also figure 5) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @TC = 80C Typical Thermal Resistance Junction to Case Typical Thermal Resistance Junction to Soldering Point Operating Temperature Range Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM RqJC RqJS Tj TSTG @ TA = 25C unless otherwise specified Symbol V(BR)R VFM Min 100 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 0.75 0.58 0.84 0.67 0.015 2 Max 3/4 0.81 0.64 0.90 0.73 0.2 100 Unit V V Test Condition IR = 0.2mA IF = 5A, Tj = 25C IF = 5A, Tj = 125C IF = 10A, Tj = 25C IF = 10A, Tj = 125C Tj = 25C, VR = 100V Tj = 125C, VR = 100V Value 100 70 5 100 1.2 2.7 -65 to +125 -65 to +150 Unit V V A A C/W C/W C C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1) Peak Reverse Current (Note 1) Notes: IRM mA 1. Short duration test pulse used to minimize self-heating effect. DS30141 Rev. 2 - 2 1 of 3 MBRM5100 IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10,000 NEW PRODUCT 10 Tj = 125C 1000 Tj = 125C Tj = 100C Tj = 100C 100 Tj = 75C 1.0 10 Tj = 25 C 0.1 1.0 Tj = 25C 0.01 0 0.2 0.4 0.6 0.8 0.1 0 0.5 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 100 Tc = 80 C 1000 f = 1MHz 80 60 CT, TOTAL CAPACITANCE (pF) 100 40 20 10 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Peak forward Surge Current 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage DS30141 Rev. 2 - 2 2 of 3 MBRM5100 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 7.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 Note 3 Note 2 NEW PRODUCT IF, DC FORWARD CURRENT (A) 6.0 Note 1 4.5 Note 2 3.0 1.5 Note 3 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 DC Forward Current Derating 7 4 1 2 5 3 6 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation Notes: 1. TA = TSOLDERING POINT, RqJS = 2.7C/W, RqSA = 0C/W. 2. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 20-40C/W. 3. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 100-140C/W. Ordering Information Device MBRM5100-13 Notes: (Note 4) Packaging POWERMITEa3 Shipping 5000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MBRM5100 YYWW MBRM5100 = Product type marking code = Manufacturers' code marking YYWW = Date code marking YY = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 POWERMITE is a registered trademark of Microsemi Corporation. DS30141 Rev. 2 - 2 3 of 3 MBRM5100 |
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