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| Variable Capacitance Diodes MA2Z392 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment I Features * Small series resistance rD and high Q value * Large capacitance ratio during low-voltage operation 0.4 0.15 INDICATES CATHODE 0.4 0.15 1 2 1.7 0.1 2.5 0.2 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Forward current (DC) Junction temperature Storage temperature Symbol VR IF Tj Tstg Rating 10 40 125 -55 to +125 Unit 0.9 0.1 V mA C C 0 to 0.05 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 7N I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Diode capacitance Series resistance* Symbol IR VF VR CD(1V) CD(4V) rD VR = 6 V IF = 400 mA IR = 1 A VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz CD = 2.3 pF, f = 470 MHz 10 3.5 1.0 5.0 1.8 0.3 6.5 2.6 0.4 Conditions Min Typ Max 50 0.8 Unit nA V V pF pF Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: RF IMPEDANCE ANALYZER 0.16 - 0.06 + 0.1 0.3 - 0.05 + 0.1 1.25 0.1 1 MA2Z392 IF V F 120 Ta = 25C 100 Variable Capacitance Diodes IR V R Ta = 25C CD VR 12 f = 1 MHz Ta = 25C 10 100 Reverse current IR (nA) 10 Diode capacitance CD (pF) Forward current IF (mA) 80 8 60 1 6 40 4 0.1 20 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0 2 4 6 8 10 0 0.1 1 10 100 Forward voltage VF (V) Reverse voltage VR (V) Reverse voltage VR (V) 2 |
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