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PD - 94836 IRFIZ44NPBF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET VDSS = 55V RDS(on) = 0.024 D G S ID = 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew TO-220 FULLP AK Absolute Maximum Ratings Max. 31 22 160 45 0.3 20 210 25 4.5 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Typ. Max. 3.3 65 Units C/W 11/13/03 IRFIZ44NPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Min. 55 2.0 17 Typ. 0.055 7.3 69 47 60 4.5 7.5 1300 410 150 12 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.024 VGS = 10V, ID = 17A 4.0 V VDS = VGS, ID = 250A S VDS = 25V, ID = 25A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 65 ID = 25A 12 nC VDS = 44V 27 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 25A ns RG = 12 RD = 1.1, See Fig. 10 Between lead, 6mm (0.25in.) nH G from package and center of die contact VGS = 0V VDS = 25V pF = 1.0MHz, See Fig. 5 = 1.0MHz D S Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 31 showing the A G integral reverse 160 p-n junction diode. S 1.3 V TJ = 25C, IS = 17A, VGS = 0V 65 98 ns TJ = 25C, IF = 25A 160 240 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRFZ44N data and test conditions VDD = 25V, starting TJ = 25C, L = 470H RG = 25, IAS = 25A. (See Figure 12) ISD 25A, di/dt 320A/s, VDD V(BR)DSS, T J 175C IRFIZ44NPBF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 100 10 4.5V 4.5V 10 1 0.1 20s PULSE WIDTH TJ TC = 25C 1 10 A 100 1 0.1 20s PULSE WIDTH TCTJ 175C = 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 41A I D , Drain-to-Source Current (A) 2.0 100 TJ = 25C TJ = 175C 1.5 1.0 10 0.5 1 4 5 6 7 V DS = 25V 20s PULSE WIDTH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFIZ44NPBF 2500 2000 Ciss 1500 Coss 1000 V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = 25A 16 V DS = 44V V DS = 28V C, Capacitance (pF) 12 8 500 Crss 4 0 1 10 100 A 0 0 10 20 30 FOR TEST CIRCUIT SEE FIGURE 13 40 50 60 70 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) ID , Drain Current (A) 100 100 10s TJ = 175C 100s 10 TJ = 25C 10 1ms 1 0.5 1.0 1.5 2.0 VGS = 0V 2.5 A 1 1 TC = 25C TJ = 175C Single Pulse 10 10ms 3.0 100 A VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFIZ44NPBF 35 VDS VGS RD 30 RG 10V Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -VDD I D , Drain Current (A) 25 20 15 10 5 0 Fig 10a. Switching Time Test Circuit VDS 90% 25 50 TC , Case Temperature ( C) 75 100 125 150 175 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFIZ44NPBF EAS , Single Pulse Avalanche Energy (mJ) VDS L 500 D.U.T. RG + V - DD TOP 400 BOTTOM ID 10A 18A 25A 10 V IAS tp 0.01 300 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 200 100 0 VDD = 25V 25 50 75 100 125 150 175 A Starting TJ , Junction Temperature (C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFIZ44NPBF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFIZ44NPBF TO-220 Full-Pak Package Outline TO-220 Full-Pak Part Marking Information E X AMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 199 9 IN T H E AS S E MB L Y L INE "K " IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T N U MB E R IR F I840G 924 K 34 32 Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 9 = 1999 WE E K 24 L INE K Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 |
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