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SMPS MOSFET PD - 95471 IRFB16N60LPBF Applications * Zero Voltage Switching SMPS * Telecom and Server Power Supplies * Uninterruptible Power Supplies * Motor Control applications * Lead-Free HEXFET(R) Power MOSFET VDSS RDS(on) typ. Trr typ. ID 600V 385m 130ns 16A Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler drive requirements. * Enhanced dv/dt capabilities offer improved ruggedness. * Higher Gate voltage threshold offers improved noise immunity. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V ID @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 16 10 60 310 Units A W W/C V V/ns C c PD @TC = 25C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and d 2.5 30 10 -55 to + 150 300 (1.6mm from case ) 1.1(10) Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton N*m (lbf*in) Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ac Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- --- 130 240 450 5.8 16 A 60 1.5 200 360 670 8.7 V ns Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25C, IS = 16A, VGS = 0V TJ = 25C, IF = 16A TJ = 125C, di/dt = 100A/s f 1080 1620 nC TJ = 25C, IS = 16A, VGS = 0V TJ = 125C, di/dt = 100A/s A TJ = 25C f f f 1 7/7/04 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFB16N60LPBF Static @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min. Typ. Max. Units 600 --- --- 3.0 --- --- --- --- --- --- 0.39 385 --- --- --- --- --- 0.79 --- --- 460 5.0 50 2.0 100 -100 --- V m V A mA nA Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 9.0A V/C Reference to 25C, ID = 1mA VDS = VGS, ID = 250A VDS = 600V, VGS = 0V VDS = 480V, VGS = 0V, TJ = 125C VGS = 30V VGS = -30V f = 1MHz, open drain f Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Coss eff. (ER) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Min. Typ. Max. Units 8.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 20 44 28 5.5 2720 260 20 120 100 --- 100 30 46 --- --- --- --- --- --- --- --- --- pF ns nC S ID = 16A Conditions VDS = 50V, ID = 9.0A VDS = 480V VGS = 10V, See Fig. 7 & 15 VDD = 300V ID = 16A RG = 1.8 VGS = 10V, See Fig. 11a & 11b VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V,VDS = 0V to 480V f f g Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy Typ. --- --- --- Max. 310 16 31 Units mJ A mJ Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient Typ. --- --- Max. 0.4 62 Units C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 2.5mH, RG = 25, IAS = 16A, dv/dt = 10V/ns. (See Figure 12a) ISD 16A, di/dt 340A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS . Coss eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% V DSS . 2 www.irf.com IRFB16N60LPBF 1000 TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V 100 TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 10 BOTTOM 10 BOTTOM 5.0V 1 1 0.1 5.0V 0.1 0.01 20s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 0.1 1 20s PULSE WIDTH Tj = 150C 10 100 0.001 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 RDS(on) , Drain-to-Source On Resistance ID = 15A 2.5 ID, Drain-to-Source Current () 100 VGS = 10V (Normalized) 10 T J = 150C 2.0 1.5 1 T J = 25C 0.1 1.0 VDS = 50V 20s PULSE WIDTH 0.01 4 6 8 10 12 14 16 0.5 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRFB16N60LPBF 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 25 10000 20 C, Capacitance(pF) Ciss Coss 100 Energy (J) 1000 15 Crss 10 10 5 1 1 10 100 1000 0 0 100 200 300 400 500 600 700 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typ. Output Capacitance Stored Energy vs. VDS 12.0 ID= 15A VGS , Gate-to-Source Voltage (V) 100.00 VDS= 480V VDS= 300V VDS= 120V ISD, Reverse Drain Current (A) 10.0 8.0 6.0 4.0 2.0 0.0 0 10 20 10.00 T J = 150C 1.00 T J = 25C 0.10 30 40 50 60 70 0.2 0.4 0.6 0.8 1.0 1.2 Q G Total Gate Charge (nC) VGS = 0V 1.4 1.6 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Typical Source-Drain Diode Forward Voltage 4 www.irf.com IRFB16N60LPBF 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 18 16 14 ID, Drain Current (A) 10000 ID, Drain-to-Source Current (A) 100 12 10 8 6 4 2 0 10 100sec 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1msec 10msec 1000 25 50 75 100 125 150 VDS, Drain-to-Source Voltage (V) T C , Case Temperature (C) Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature VDS VGS RG 10V Pulse Width 1 s Duty Factor 0.1 % RD VDS 90% D.U.T. + -VDD 10% VGS td(on) tr t d(off) tf Fig 11a. Switching Time Test Circuit Fig 11b. Switching Time Waveforms www.irf.com 5 IRFB16N60LPBF 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 P DM t1 t2 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty factor D = 2. Peak T t1/ t 2 J = P DM x Z thJC +T C 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5.0 VGS(th) Gate threshold Voltage (V) 4.5 4.0 3.5 ID = 250A 3.0 2.5 2.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 13. Threshold Voltage vs. Temperature 6 www.irf.com IRFB16N60LPBF 600 EAS , Single Pulse Avalanche Energy (mJ) 500 ID 7.2A 10A BOTTOM 16A TOP 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 14a. Maximum Avalanche Energy vs. Drain Current 15V V(BR)DSS VDS L DRIVER tp RG 20V D.U.T IAS tp + - VDD A 0.01 I AS Fig 14b. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. Fig 14c. Unclamped Inductive Waveforms QG 50K 12V .2F .3F VGS V D.U.T. + V - DS QGS VG QGD VGS 3mA IG ID Current Sampling Resistors Charge Fig 15a. Gate Charge Test Circuit Fig 15b. Basic Gate Charge Waveform www.irf.com 7 IRFB16N60LPBF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 16. For N-Channel HEXFET(R) Power MOSFETs 8 www.irf.com IRFB16N60LPBF TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in millimeters (inches) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.7/04 9 |
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